Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT136-TO71 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-71 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:

IT136

Abstract: IT137 IT138 IT139 T071 IT137/W
Contextual Info: KÜ^DIL IT136-IT139 Dual Monolithic PHP Transistor FEATU RES • High Gain at Low Current - h p ^ > 200 PIN CONFIGURATION 1mA • Low O utput Capacitance — CQj30 < 3 pF • Tight I B Match - I B i • Tight V BE Tracking - A V (3E i - V B E 2 * • - 5 5 ° C to + 125°C

it139

Contextual Info: IT136 —IT139 CALOGIC CORP MAE D 164432B Monolithic Dual PNP General Purpose Amplifier fi M C G Q caloric CORPORATION v 'T W -T .l IT136-IT139 A B S O LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • • 0Q003bS High Gain at Low Current

lc1f

Abstract: IT136 IT137 IT138 IT139
Contextual Info: SOLID ÏÏÏ STATE IT 1 3 6 -IT 1 3 9 E D ÌT |3fl7£0fll □□11D34 a I IT136-IT139 SetSMIIIIYJI II l r = . l l ^ § > Monolithic Dual PNP General Purpose Amplifier r* FEATURES ABSOLUTE MAXIMUM RATINGS • High G ain at Low Current • Low Output C apacitance

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT136 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-78 NPN SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: IT136/71 PH: 561 283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-71 PNP SILICON DUAL DIFFERENTIAL TRANSISTOR ABSOLUTE MAXIMUM RATING:

Contextual Info: IT136/71 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100p @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IT136

Abstract: IT137 IT138 IT139 XIT137 XIT138
Contextual Info: IT136-IT139 CAL06IC CORP_ M8E D • W 3B5 000D3bS l « C 6 C calocft Monolithic Dual PNP General Purpose Amplifier CORPORATION V IT136-IT139 FEATURES • • • • • High Gain at Low Current Low Output Capacitance Tight Ib Match Tight V b e Tracking

Contextual Info: 2SJ414 Ordering number : EN5367 SANYO Semiconductors DATA SHEET 2SJ414 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-state resistance. Low-voltage drive. Surface mount type device making the following possible.

Contextual Info: ECH8663R Ordering number : ENA1184 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.

ECH8308

Contextual Info: ECH8308 Ordering number : ENA1182 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8308 General-Purpose Switching Device Applications Features • • • • Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance.

a1216 transistor

Abstract: a1216 marking xa
Contextual Info: MCH6649 Ordering number : ENA1216 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6649 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.

Contextual Info: 3LN04CH Ordering number : ENA1193 N-Channel Silicon MOSFET 3LN04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC

Contextual Info: ECH8663R Ordering number : ENA1184 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.

a12124

Abstract: 3lp04ch
Contextual Info: 3LP04CH Ordering number : ENA1212 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

A1199

Abstract: CPH6339
Contextual Info: CPH6339 Ordering number : ENA1199 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6339 General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 4V drive Specifications Absolute Maximum Ratings at Ta=25°C

3lp04ss

Abstract: A12144
Contextual Info: 3LP04SS Ordering number : ENA1214 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04SS General-Purpose Switching Device Applications Features • • 1.5V drive. Halogen Free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

A1216

Abstract: MOS12
Contextual Info: MCH6649 注文コード No. N A 1 2 1 6 三洋半導体データシート N MCH6649 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。

zp 18a

Abstract: 2SJ414 S6080 IT13661
Contextual Info: 2SJ414 注文コード No. N 5 3 6 7 三洋半導体データシート N 2SJ414 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 低オン抵抗。 ・ 低電圧駆動。 ・ 面実装に対応し工数低減およびセットの高密度 , 小型化が可能となる。

rg2006

Abstract: A1847 ENA1847 RG2006JS-SB
Contextual Info: RG2006JS-SB Ordering number : ENA1847 SANYO Semiconductors DATA SHEET RG2006JS-SB Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • VRRM=600V trr=16ns typ. Low noise at the time of reverse recovery Specifications

Contextual Info: MCH5908 Ordering number : ENA1218A SANYO Semiconductors DATA SHEET N-Channel Silicon Junction FET MCH5908 High-Frequency Amplifier, AM Amplifier, Low-Frequency Amplifier Applications Features • • Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting

Contextual Info: ECH8308 Ordering number : ENA1182A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8308 General-Purpose Switching Device Applications Features • • • Best suited for load switching 1.8V drive Protection diode in • • Low ON-resistance Halogen free compliance

Contextual Info: ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

Contextual Info: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.