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    IXFH9N80 Price and Stock

    IXYS Corporation IXFH9N80

    MOSFET N-CH 800V 9A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH9N80 Tube 30
    • 1 -
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    • 100 $5.17567
    • 1000 $5.17567
    • 10000 $5.17567
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    IXYS Corporation IXFH9N80Q

    MOSFET N-CH 800V 9A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH9N80Q Tube 30
    • 1 -
    • 10 -
    • 100 $5.51033
    • 1000 $5.51033
    • 10000 $5.51033
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    IXYS Integrated Circuits Division IXFH9N80

    MOSFET DIS.9A 800V N-CH TO247-3 HIPERFET THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFH9N80
    • 1 $3.1801
    • 10 $3.1801
    • 100 $2.891
    • 1000 $2.891
    • 10000 $2.891
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    IXFH9N80 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH9N80 IXYS 800V HiPerFET power MOSFET Original PDF
    IXFH9N80Q IXYS 800V HiPerFET power MOSFET Q-class Original PDF
    IXFH9N80S IXYS HiPerFET Power MOSFET Original PDF

    IXFH9N80 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    8N80

    Abstract: 9n80 diode 931 p 7 W8N80 smd diode SM 97 IXFH9N80 IXFH8N80 125OC 08N80 diode A2 9
    Text: Preliminary Data Sheet VDSS HiPerFET Power MOSFETs TM IXFH8N80 800V IXFH9N80 800V ID25 RDS on trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXFH8N80 IXFH9N80 O-247 8N80 9n80 diode 931 p 7 W8N80 smd diode SM 97 125OC 08N80 diode A2 9 PDF

    8n80

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH8N80 IXFH9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS ID25 RDS on trr 800V 800V 8A 9A 1.1W 0.9W 250 ns 250 ns TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 800 V


    Original     		IXFH8N80 IXFH9N80 O-247 Figure10. 8n80 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet VDSS TM HiPerFET Power MOSFETs IXFH8N80 800V IXFH9N80 800V ID25 RDS on trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXFH8N80 IXFH9N80 O-247 PDF

    8N80

    Abstract: 9n80 IXFH8N80 transistor ixfh application note IXFH9N80 125OC 96527
    Text: HiPerFETTM Power MOSFETs IXFH8N80 IXFH9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Maximum Ratings VDSS ID25 RDS on trr 800V 800V 8A 9A 1.1W 0.9W 250 ns 250 ns Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		IXFH8N80 IXFH9N80 Figure10. 8N80 9n80 IXFH8N80 transistor ixfh application note IXFH9N80 125OC 96527 PDF

    IXFH32N50Q equivalent

    Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
    Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω


    Original     		IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 PDF

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 PDF

    8N80

    Abstract: 9n80
    Text: □ IXYS Preliminary Data Sheet HiPerFET Power MOSFETs IXFH8N80 IXFH9N80 D V DSS ^D25 800V 800V 8A 9A DS on % 0.9Q. 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family TO-247 AD (IXFH) Maximum Ratings Symbol TestConditions V DSS


    OCR Scan     		IXFH8N80 IXFH9N80 O-204 O-247 8N80 9n80 PDF

    96527

    Abstract: 9N80 8n80
    Text: OIXYS VDSS HiPerFET Power MOSFETs IXFH 8N80 IXFH 9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 DS on tr r 800V 8A 1.1Q 250ns 800V 9A 0.9ß 250ns TO-247 AD (IXFH) Preliminary data f D(TAB) Symbol Test Conditions v'DSS T j =25°C to150°C


    OCR Scan     		250ns 250ns O-247 to150 IXFH8N80 96527 9N80 8n80 PDF

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 PDF