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    BC 247 B

    Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
    Text: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25


    OCR Scan     		PDF IXGH32N60CD1 IXGH32N60CD1S O-247 32N60CD1S) BC 247 B IXGH32N60 DIODE SMD GEM

    diode lt 247

    Abstract: IXGH32N60
    Text: ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode v 600 V 60 A 2.1V 55 ns CES ^C25 v CE sat typ ^fl(typ) Light Speed Series Symbol Test Conditions V CES ^ Vco* Tj = 25°C to 150°C; V « Maximum Ratings = 25°C to 150°C


    OCR Scan     		PDF IXGH32N60CD1 IXGH32N60CD1S O-247 32N60CD1S) diode lt 247 IXGH32N60