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IXYS Corporation IXGQ50N60C4D1 IGBT 600V 90A 300W TO3P
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IXGQ50N60C4D1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGQ50N60C4D1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 300W TO3P		Original	PDF

IXGQ50N60C4D1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IF110 Abstract: IXGQ50N60C4D1 tc9050 IGBT 15A TO-3P Text: Advance Technical Information High-Gain IGBT w/ Diode IXGQ50N60C4D1 VCES IC90 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 50A 2.50V 40ns TO-3P Maximum Ratings G C E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXGQ50N60C4D1 IF110 25subjective 338B2 IF110 IXGQ50N60C4D1 tc9050 IGBT 15A TO-3P	PDF
IXGH50N60C4D1 Abstract: IXGQ50N60C4D1 G50N60 g50n Text: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 46A VCE sat ≤ 2.3V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V	Original	IXGQ50N60C4D1 IXGH50N60C4D1 IC110 IC110 IF110 O-247 IXGH50N60C4D1 G50N60 g50n	PDF
Untitled Abstract: No abstract text available Text: High-Gain IGBTs w/ Diode VCES = 600V IC110 = 46A VCE sat ≤ 2.3V IXGQ50N60C4D1 IXGH50N60C4D1 High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V	Original	IC110 IXGQ50N60C4D1 IXGH50N60C4D1 IF110 O-247	PDF
G50N60 Abstract: IXGH50N60C4D1 IXGQ50N60C4D1 Text: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 36A VCE sat ≤ 2.50V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V	Original	IXGQ50N60C4D1 IXGH50N60C4D1 IC110 IC110 IF110 O-247 G50N60 IXGH50N60C4D1	PDF