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IXYS Corporation IXGX50N60AU1 IGBT 600V 75A 300W TO247
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IXGX50N60AU1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
IXGX50N60AU1		IXYS	HiPerFAST IGBT with Diode		Original	PDF

IXGX50N60AU1 Datasheets Context Search

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931 diode smd Abstract: 50n60 IXGX50N60AU1 50N60AU1 IXGX50N60AU1S ic 931 Text: Preliminary data HiPerFASTTM IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack VCES IC25 VCE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	IXGX50N60AU1 IXGX50N60AU1S O-247 50N60AU1S) 931 diode smd 50n60 IXGX50N60AU1 50N60AU1 IXGX50N60AU1S ic 931
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	PDF	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Untitled Abstract: No abstract text available Text: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600	OCR Scan	PDF	IXGX50N60AU1 IXGX50N60AU1S O-247
ic tea 1090 Abstract: smd tea 521 27AD Text: Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S v CES ^C25 v* CE sat % Combi Pack = = = = 600 V 75 A 2.7 V 275 ns T0-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MO	OCR Scan	PDF	IXGX50N60AU1 IXGX50N60AU1S T0-247 50N60AU1S) O-247 s1997 ic tea 1090 smd tea 521 27AD
ixys ml 075 Abstract: 50N60A Text: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES	OCR Scan	PDF	IXGX50N60AU1 IXGX50N60AU1S 50N60AU1 ixys ml 075 50N60A
ixgr32n60cd1 Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60 Text: Discrete IGBTs with FRED Diode U r u G series C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0 TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1	OCR Scan	PDF	O-268 ISOPLUS247TM OT-227B T0-220 PLUS247TM O-263 O-247 T0-204 O-264 IXGA12N100U1 ixgr32n60cd1 IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
Untitled Abstract: No abstract text available Text: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20	OCR Scan	PDF	50N60AU1 25cCto O-247 50N80AU1 1999IXYS