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    IXTL2X180N10T Price and Stock

    Littelfuse Inc IXTL2X180N10T

    MOSFET 2N-CH 100V 100A I5-PAK
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    DigiKey IXTL2X180N10T Tube 300
    • 1 -
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    • 1000 $12.18713
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    Newark IXTL2X180N10T Reel 300
    • 1 $13.65
    • 10 $13.65
    • 100 $13.65
    • 1000 $12.58
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    Ozdisan Elektronik IXTL2X180N10T
    • 1 $24.46534
    • 10 $24.46534
    • 100 $22.8648
    • 1000 $22.8648
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    IXYS Corporation IXTL2X180N10T

    MOSFETs 180 Amps 100V 6.1 Rds
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    Mouser Electronics IXTL2X180N10T
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    TTI IXTL2X180N10T Tube 300
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    • 1000 $12.68
    • 10000 $12.19
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    IXTL2X180N10T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTL2X180N10T IXYS FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 100V ISOPLUS I5-PAK Original PDF

    IXTL2X180N10T Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTL2x180N10T TrenchTM Power MOSFET Common-Gate Pair VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions


    Original     		PDF IXTL2x180N10T 2x100A 338B2

    offline UPS

    Abstract: MOSFET 923 54 IXTL2x180N10T
    Text: Advance Technical Information TrenchMVTM Power MOSFETs Common-Gate Pair IXTL2x180N10T D VDSS = 100 V ID25 = 2x100 A Ω RDS on ≤ 7.4 mΩ D (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated RG S RG ISOPLUS i5-PakTM (IXTL) G S


    Original     		PDF IXTL2x180N10T 2x100 405B2 offline UPS MOSFET 923 54 IXTL2x180N10T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchTM Power MOSFET Common-Gate Pair IXTL2x180N10T VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions


    Original     		PDF IXTL2x180N10T 2x100A 338B2

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T

    isoplus

    Abstract: isoplus ixys mounting copper thermal SIL-PAD ISOPLUS247 IXFC14N60P IXFP14N60P IXTL2x240N055T IXTL2X200N085T
    Text: H I G H C U R R E N T T R E N C H M V P O W E R M O S F E T S I N 5 - L E A D I S O P L U S I 5 - PA K S ™ N E W P R O D U C T B R I E F SUMMARY TABLE Part Number High Current TrenchMVTM Power MOSFETs in 5-lead ISOPLUS i5-PaksTM 2 HUGE TRENCH MOSFETS IN 1 ISOLATED PACKAGE.


    Original     		PDF IXTL2x240N055T IXTL2x220N075T IXTL2x200N085T IXTL2x180N10T 2x240 2x220 2x200 2x180 2x140 2x120 isoplus isoplus ixys mounting copper thermal SIL-PAD ISOPLUS247 IXFC14N60P IXFP14N60P IXTL2x240N055T IXTL2X200N085T