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    IXTP130N10T Price and Stock

    Littelfuse Inc IXTP130N10T

    MOSFET N-CH 100V 130A TO220AB
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    DigiKey IXTP130N10T Tube 199 1
    • 1 $4
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    • 1000 $1.71225
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    Newark IXTP130N10T Bulk 300
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    • 100 $2.44
    • 1000 $1.96
    • 10000 $1.83
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    IXYS Corporation IXTP130N10T

    MOSFETs MOSFET Id130 BVdass100
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    Mouser Electronics IXTP130N10T
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    Future Electronics IXTP130N10T Tube 27 Weeks 300
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    • 1000 $1.73
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    TTI IXTP130N10T Tube 300 50
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    • 100 $2.04
    • 1000 $1.71
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    TME IXTP130N10T 9 1
    • 1 $2.93
    • 10 $2.32
    • 100 $2.09
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    Chip 1 Exchange IXTP130N10T 3,589
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    New Advantage Corporation IXTP130N10T 2,248 1
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    • 100 $4.35
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    IXYS Integrated Circuits Division IXTP130N10T

    MOSFET DIS.130A 100V N-CH TO220 TRENCHMV THT
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    Ozdisan Elektronik IXTP130N10T 2,748
    • 1 $3.27129
    • 10 $3.27129
    • 100 $2.9739
    • 1000 $2.9739
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    IXTP130N10T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP130N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO-220 Original PDF

    IXTP130N10T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA130N10T IXTP130N10T O-263 130N10T 9-08-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTA130N10T IXTP130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 130 A Ω ≤ 8.5 mΩ TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C


    Original     		PDF IXTA130N10T IXTP130N10T O-263 O-220) O-220 O-263 130N10T

    IXTP130N10T

    Abstract: IXTA130N10T IXTP130N10 130n10 S5080
    Text: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA130N10T IXTP130N10T O-263 130N10T 9-08-A IXTP130N10T IXTA130N10T IXTP130N10 130n10 S5080

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T

    130N10T

    Abstract: 130n10 IXTP130N10
    Text: Preliminary Technical Information IXTH130N10T IXTQ130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 100 V = 130 A Ω ≤ 8.5 mΩ TO-247 (IXTH) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTH130N10T IXTQ130N10T O-247 130N10T 130N10T 130n10 IXTP130N10