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    IXTA130N10T Search Results

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    IXTA130N10T Price and Stock

    Littelfuse Inc IXTA130N10T

    MOSFET N-CH 100V 130A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTA130N10T Tube 53 1
    • 1 $4.76
    • 10 $4.76
    • 100 $4.76
    • 1000 $2.14038
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    Newark IXTA130N10T Bulk 20 1
    • 1 $1.78
    • 10 $1.78
    • 100 $1.78
    • 1000 $1.78
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    Littelfuse Inc IXTA130N10T7

    MOSFET N-CH 100V 130A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTA130N10T7 Tube 300
    • 1 -
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    • 1000 $2.31427
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    Newark IXTA130N10T7 Bulk 300
    • 1 -
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    • 100 $3.25
    • 1000 $2.61
    • 10000 $2.43
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    Littelfuse Inc IXTA130N10T-TRL

    MOSFET N-CH 100V 130A TO263
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    DigiKey IXTA130N10T-TRL Cut Tape 1
    • 1 $5.15
    • 10 $5.15
    • 100 $5.15
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    IXTA130N10T-TRL Reel 800
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    • 1000 $2.373
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    IXTA130N10T-TRL Digi-Reel 1
    • 1 $5.15
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    Newark IXTA130N10T-TRL Reel 800
    • 1 $3.14
    • 10 $3.14
    • 100 $3.14
    • 1000 $3.14
    • 10000 $2.59
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    IXYS Corporation IXTA130N10T-TRL

    MOSFETs IXTA130N10T TRL
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    Mouser Electronics IXTA130N10T-TRL 773
    • 1 $3.65
    • 10 $3.65
    • 100 $3.64
    • 1000 $2.37
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    TTI IXTA130N10T-TRL Reel 800
    • 1 -
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    • 1000 $2.37
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    TME IXTA130N10T-TRL 1
    • 1 $3.67
    • 10 $3.3
    • 100 $2.62
    • 1000 $2.44
    • 10000 $2.44
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    IXYS Corporation IXTA130N10T

    MOSFETs 130 Amps 100V 8.5 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTA130N10T
    • 1 -
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    • 1000 $2.27
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    Future Electronics IXTA130N10T Tube 27 Weeks 300
    • 1 -
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    • 100 $2.3
    • 1000 $2.15
    • 10000 $2.1
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    TTI IXTA130N10T Tube 300
    • 1 -
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    • 100 -
    • 1000 $2.23
    • 10000 $2.14
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    TME IXTA130N10T 1
    • 1 $3.33
    • 10 $3
    • 100 $2.38
    • 1000 $2.22
    • 10000 $2.22
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    New Advantage Corporation IXTA130N10T 600 1
    • 1 -
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    • 100 $5.44
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    Find more IXTA130N10T price and stock on Findchips.com

    IXTA130N10T Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA130N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO-263 Original PDF
    IXTA130N10T7 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO-263-7 Original PDF
    IXTA130N10T-TRL IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO263 Original PDF

    IXTA130N10T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA130N10T IXTP130N10T O-263 130N10T 9-08-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTA130N10T IXTP130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 130 A Ω ≤ 8.5 mΩ TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C


    Original     		PDF IXTA130N10T IXTP130N10T O-263 O-220) O-220 O-263 130N10T

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET VDSS ID25 IXTA130N10T7 = 100V = 130A Ω ≤ 9.1mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA130N10T7 O-263 062in. 130N10T 9-08-A

    IXTA130N10T7

    Abstract: 130N10T Package to 263-7 s635
    Text: TrenchMVTM Power MOSFET IXTA130N10T7 VDSS ID25 = 100V = 130A Ω ≤ 9.1mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA130N10T7 O-263 062in. 130N10T 9-08-A IXTA130N10T7 Package to 263-7 s635

    IXTP130N10T

    Abstract: IXTA130N10T IXTP130N10 130n10 S5080
    Text: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA130N10T IXTP130N10T O-263 130N10T 9-08-A IXTP130N10T IXTA130N10T IXTP130N10 130n10 S5080

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    130n10

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 130N10T7 VDSS ID25 RDS on = 100 V = 130 A ≤ 8.5 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF 130N10T7 O-263 130N10T 130n10

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original     		PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T

    130N10T

    Abstract: 130n10 IXTP130N10
    Text: Preliminary Technical Information IXTH130N10T IXTQ130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 100 V = 130 A Ω ≤ 8.5 mΩ TO-247 (IXTH) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		PDF IXTH130N10T IXTQ130N10T O-247 130N10T 130N10T 130n10 IXTP130N10