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IXTH130N10T Price and Stock

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Littelfuse Inc IXTH130N10T MOSFET N-CH 100V 130A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTH130N10T	Tube	12		1	1 $7.61 10 $7.61 100 $4.40233 1000 $3.21037 10000 $3.21037	Buy Now
Newark	IXTH130N10T	Bulk			300	1 - 10 - 100 $4.58 1000 $3.68 10000 $3.42	Buy Now
IXYS Corporation IXTH130N10T MOSFETs 130 Amps 100V 8.5 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTH130N10T		23			1 $6.18 10 $5.44 100 $4.59 1000 $3.21 10000 $3.21	Buy Now
Future Electronics	IXTH130N10T	Tube			30	1 - 10 - 100 $3.76 1000 $3.76 10000 $3.76	Buy Now
TTI	IXTH130N10T	Tube			300	1 - 10 - 100 - 1000 $3.45 10000 $3.45	Buy Now
IXYS Integrated Circuits Division IXTH130N10T MOSFET DIS.130A 100V N-CH TO-247AD TRENCHMV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXTH130N10T		42			1 $6.1336 10 $6.1336 100 $5.576 1000 $5.576 10000 $5.576	Buy Now

IXTH130N10T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTH130N10T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO-247		Original	PDF

IXTH130N10T Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TrenchMVTM Power MOSFET VDSS ID25 IXTH130N10T IXTQ130N10T RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 130A Ω ≤ 9.1mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTH130N10T IXTQ130N10T O-247 130N10T 7-29-08-A
IXTH130N10T Abstract: IXTQ130N10T 130N10T 130n10 TO-3P weight Text: TrenchMVTM Power MOSFET IXTH130N10T IXTQ130N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 130A Ω ≤ 9.1mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTH130N10T IXTQ130N10T O-247 130N10T 7-29-08-A IXTH130N10T IXTQ130N10T 130n10 TO-3P weight
130N10T Abstract: 130n10 IXTP130N10 Text: Preliminary Technical Information IXTH130N10T IXTQ130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 100 V = 130 A Ω ≤ 8.5 mΩ TO-247 (IXTH) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	PDF	IXTH130N10T IXTQ130N10T O-247 130N10T 130N10T 130n10 IXTP130N10
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
1262-33 Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.	Original	PDF	5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T