Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTQ130N10T Search Results

    SF Impression Pixel

    IXTQ130N10T Price and Stock

    Littelfuse Inc IXTQ130N10T

    MOSFET N-CH 100V 130A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ130N10T Tube 79 1
    • 1 $5.39
    • 10 $5.39
    • 100 $3.25667
    • 1000 $2.51263
    • 10000 $2.51263
    Buy Now
    Newark IXTQ130N10T Bulk 300
    • 1 -
    • 10 -
    • 100 $3.58
    • 1000 $2.88
    • 10000 $2.68
    Buy Now

    IXYS Corporation IXTQ130N10T

    MOSFETs 130 Amps 100V 8.5 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTQ130N10T 294
    • 1 $5.34
    • 10 $4.16
    • 100 $3.26
    • 1000 $2.51
    • 10000 $2.51
    Buy Now
    Future Electronics IXTQ130N10T Tube 30
    • 1 -
    • 10 -
    • 100 $2.94
    • 1000 $2.94
    • 10000 $2.94
    Buy Now
    TTI IXTQ130N10T Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.51
    • 10000 $2.51
    Buy Now
    New Advantage Corporation IXTQ130N10T 302 1
    • 1 -
    • 10 -
    • 100 $6.39
    • 1000 $5.96
    • 10000 $5.96
    Buy Now

    IXYS Integrated Circuits Division IXTQ130N10T

    MOSFET DIS.130A 100V N-CH TO3P TRENCHMV THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTQ130N10T 402
    • 1 $4.80051
    • 10 $4.80051
    • 100 $4.3641
    • 1000 $4.3641
    • 10000 $4.3641
    Buy Now

    IXTQ130N10T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTQ130N10T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO-3P Original PDF

    IXTQ130N10T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET VDSS ID25 IXTH130N10T IXTQ130N10T RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 130A Ω ≤ 9.1mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ


    Original
    PDF IXTH130N10T IXTQ130N10T O-247 130N10T 7-29-08-A

    IXTH130N10T

    Abstract: IXTQ130N10T 130N10T 130n10 TO-3P weight
    Text: TrenchMVTM Power MOSFET IXTH130N10T IXTQ130N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 130A Ω ≤ 9.1mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ


    Original
    PDF IXTH130N10T IXTQ130N10T O-247 130N10T 7-29-08-A IXTH130N10T IXTQ130N10T 130n10 TO-3P weight

    130N10T

    Abstract: 130n10 IXTP130N10
    Text: Preliminary Technical Information IXTH130N10T IXTQ130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 100 V = 130 A Ω ≤ 8.5 mΩ TO-247 (IXTH) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original
    PDF IXTH130N10T IXTQ130N10T O-247 130N10T 130N10T 130n10 IXTP130N10

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    1262-33

    Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
    Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.


    Original
    PDF 5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T

    IXAN0065

    Abstract: IXTQ130N10T mosfet ixys
    Text: IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 IXYS provides datasheets with parameters that are essential and useful for selecting the appropriate device as well as for predetecting its performance in an application. The graphs included in the datasheet represent typical performance


    Original
    PDF IXAN0065 IXTH/IXTQ130N10T" IXAN0065 IXTQ130N10T mosfet ixys