IXTM13N80
Abstract: SHD239609
Text: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 800 13 8 300 0.8 @ 6.5 0.27 IXTM13N80
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IXTM13N80
SHD239609
IXTM13N80
SHD239609
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IXTM13N80
Abstract: SHD2256 SHD225609
Text: SENSITRON SEMICONDUCTOR SHD225609 TECHNICAL DATA DATA SHEET 275, REV – Formerly part number SHD2256 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 800 Volt, 0.80 Ohm, 13A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Similar to Industry Part Type - IXTM13N80
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SHD225609
SHD2256
IXTM13N80
5ID25
250mA
IXTM13N80
SHD2256
SHD225609
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SHD225609
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225609 TECHNICAL DATA DATA SHEET 275, REV – Formerly part number SHD2256 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 800 Volt, 0.80 Ohm, 13A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Similar to Industry Part Type - IXTM13N80
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SHD2256
SHD225609
IXTM13N80
SHD225609
O-254
O-254
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SHD239608
Abstract: shd239606
Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM
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O-254,
O-257)
SHD226413
SHD226401
SHD226402
SHD226403
SHD226404
SHD226405
SHD226406
SHD226407
SHD239608
shd239606
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IXFM50N20
Abstract: IRF9140 SHD239508 SHD239613 SHD2181 SHD2181A SHD2182 SHD2183 SHD2184 SHD218413
Text: POWER MOSFETS HERMETIC POWER MOSFETs N-CHANNEL, SURFACE MOUNT TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V BR DSS Volts SHD218413 30 SHD2181 60 SHD2182 100 SHD2183 200 SHD2184 400 SHD2185 500 SHD2186 800 SHD2187 900 SHD2188 1000 SHD218413A 30 SHD2181A 60
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SHD218413
SHD2181
SHD2182
SHD2183
SHD2184
SHD2185
SHD2186
SHD2187
SHD2188
SHD218413A
IXFM50N20
IRF9140
SHD239508
SHD239613
SHD2181
SHD2181A
SHD2182
SHD2183
SHD2184
SHD218413
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SIEMENS 800
Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80
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O-220AB
O-218
O-204
204AC
O-238AA
SIEMENS 800
950p to-247 package
MTH6N85
2SK351
IRFAF30
21n60n
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IXFH15N100
Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP
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IRFP354
O-247
IRFP360LC
2N3049DIE
2C3049
O-204AA/TO-3
IXTM20N55A
IXFH15N100
2N3051
IXFX15N100
IXFH40N30
IXFM6N90
IRFP450R
IXTH24N50L
IXTH26N50
IXFH20N50
IXFH9N80
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Untitled
Abstract: No abstract text available
Text: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C
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11N80
13N80
11N80
13N80
O-204
O-247
IXTM13N80
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Irfp250 irfp460
Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)
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O-204
O-264
ISOPLUS247
O-220
O-252
O-247
O-268
ISOPLUS220
O-263
OT-227B
Irfp250 irfp460
IXTA3N120
36P10
IRFP450 bridge
n503
irfp460 complementary
IXTH30N25
IXTH48N15
IXTH12N100Q
16p20
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megamos
Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4
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O-204
O-247
megamos
f g megamos
megamos 48
ID 48 Megamos
megamos 13
IXTH40N25
IXTH12N95
IXTH12N100
IXTH26N50
IXTH11N95
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Untitled
Abstract: No abstract text available
Text: nixYS MegaMOS FET IXTH/IXTM 13N80 VDSS = 800 V U =13 A ^D S on = O ' * * ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V * DSS Tj =25°Cto150°C 800 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 800 V VGS v GSM Continuous ±20 V Transient
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13N80
Cto150
O-247
O-204
O-204
O-247
C2-60
IXTH13NB0
IXTM13N80
C2-61
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*2393n
Abstract: D2199 IRF9140 2184b d2186 2188a d2188
Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC POWER MOSFETs N -C H A N N E L . T O -2 5 4 . T O -2 5 7 TYPE NUM BER DRAIN TO SO URCE BREAKDO W N VOLTAGE CO NTINUO US DRAIN CURRENT M AXIM UM POWER DISSIPATION •d PD V (BR)DSS STATIC
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SHD2261
SHD2262
SHD2263
SHD2264
SHD2265
SHD2266
SHD2268
IRFY044
*2393n
D2199
IRF9140
2184b
d2186
2188a
d2188
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