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    KM44C41 Search Results

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    KM44C41 Price and Stock

    Samsung Semiconductor KM44C4100CK-6

    DRAM - 16MBit (4M x 4) - 5V - 24-Pin SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com KM44C4100CK-6 706
    • 1 $19.84
    • 10 $11.32
    • 100 $5.28
    • 1000 $5.28
    • 10000 $5.28
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    Samsung Electro-Mechanics KM44C4100BS-6

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    Bristol Electronics KM44C4100BS-6 302 1
    • 1 $48
    • 10 $48
    • 100 $39.36
    • 1000 $39.36
    • 10000 $39.36
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    Samsung Electro-Mechanics KM44C4100CS-6

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    Bristol Electronics KM44C4100CS-6 55 1
    • 1 $12
    • 10 $9
    • 100 $7.5
    • 1000 $7.5
    • 10000 $7.5
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    Samsung Semiconductor KM44C4100AS-7

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    Bristol Electronics KM44C4100AS-7 17
    • 1 -
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    Samsung Semiconductor KM44C4104CS-5

    4M X 4 EDO DRAM, 50 ns, PDSO24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM44C4104CS-5 1,389
    • 1 $5.937
    • 10 $5.937
    • 100 $5.937
    • 1000 $2.9685
    • 10000 $2.9685
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    KM44C4104CS-5 38
    • 1 $4.4529
    • 10 $2.2265
    • 100 $2.2265
    • 1000 $2.2265
    • 10000 $2.2265
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    KM44C41 Datasheets (79)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44C4100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM44C4100-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C4100-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C4100-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C4100C Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CK-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CK-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CK-L-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CKL-5 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM44C4100CK-L-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CKL-6 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM44C4100CS-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CS-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CS-L-5 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CSL-5 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM44C4100CS-L-6 Samsung Electronics 4M x 4-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM44C4100CSL-6 Samsung Electronics 4M x 4-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM44C4100J-6 Samsung Electronics 4M x 4-Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C4100J-7 Samsung Electronics 4M x 4-Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C4100J-8 Samsung Electronics 4M x 4-Bit CMOS DRAM with Fast Page Mode Scan PDF

    KM44C41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


    Original
    PDF KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C advanc4V4104C 300mil

    KM44C4000C

    Abstract: KM44C4100C KM44V4000C KM44V4100C V4100C
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


    Original
    PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C ba4V4100C 300mil KM44C4000C KM44C4100C KM44V4000C KM44V4100C V4100C

    taa 723

    Abstract: A0-A10J-1 A10C A10EC
    Text: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM OS Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4,194 ,3 0 4 x 4 tyt Static C olum n M ode C M O S DRAM s. Static Colum n M ode offers high speed ran d o m acce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2K Ref. o r 4 K R ef. , acce ss


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    PDF KM44C4002A, KM44C4102A taa 723 A0-A10J-1 A10C A10EC

    Untitled

    Abstract: No abstract text available
    Text: KM44C4102A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION T h e S am su ng K M 4 4 C 4 1 0 2 A /A L /A L L /A S L is a high • Performance range: K M 44C 4102A /A L/A LL/A S L-5 tRAC tCAC tac 50ns 13ns


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    PDF KM44C4102A/AL/ALL/ASL 110ns 150ns 130ns 24-LEAD 300MIL, 400MIL)

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


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    PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C 4V4000C,

    Untitled

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC b?E ]> Bi 7 c3 b m M 5 KM44C4102 001b2tia Tb2 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C4102 is a high speed CMOS 4 ,194,304x4 Dynamic Random Access Memory. Its


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    PDF KM44C4102 001b2tia KM44C4102 304x4 KM44C4102-7 130ns KM44C4102-8 150ns KM44C4102-6

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C4100L 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4100L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


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    PDF KM44C4100L KM44C4100L 110ns KM44C4100L-7 130ns KM44C4100L-8 KM44C4100L-6 150ns 47/iF

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily of 4 .1 9 4 ,3 0 4 x 4 bit E xte n d e d D a ta O u t C M O S D R A M s. E xte n d e d D a ta O u t M ode o ffe rs high sp e e d ran d o m a c c e s s of


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    PDF KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C sh04C 300mil

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B

    Untitled

    Abstract: No abstract text available
    Text: KM44C4110A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 44 C 4 110 A /A L/A LL /A S L is a high speed C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D ynam ic R andom


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    PDF KM44C4110A/AL/ALL/ASL 110ns 130ns 150ns KM44C411OA/AL/ALL/ASL 24-LEAD 300MIL) 300MIL,

    Untitled

    Abstract: No abstract text available
    Text: KM44C4100 CMOS DRAM 4M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 4 1 00 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM44C4100 24-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM O S Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4 ,1 94 ,3 0 4 x 4 f i t Static C olum n M ode C M O S DRAM s. Static C olum n M ode offers high sp e e d random a cce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2 K Ref. o r 4 K R ef. , acce ss


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    PDF KM44C4002A, KM44C4102A

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003A, KM44C4103A CMOS DRAM 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode Quad C 5 5 DRAMs. Fast Page Mode offers high speed random access of memory cells within the. same row. Refresh cycle 2K Ref. or 4K Ref. , access


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    PDF KM44C4003A, KM44C4103A C55-before-ES5

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C4110A/AL/ALL/ASL 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M 4 4 C 4 1 1 0 A / A L / A L L / A S L is a h ig h • Performance range: speed CMOS 4 ,1 9 4 ,3 0 4 b i t x 4 D y n a m ic R a n d o m


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    PDF KM44C4110A/AL/ALL/ASL KM44C4110A/AL/ALL/ASL-5 KM44C4110A/ALVALL/ASL-6 KM44C4110A/AL/ALLyASL-7 KM44C4110A/AL7ALL/ASL-8 110ns 130ns 150ns 24-LEAD

    SBC20

    Abstract: No abstract text available
    Text: KM44C4100L CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4100L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


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    PDF KM44C4100L KM44C4100L-6 KM44C4100L-7 KM44C4100L-8 110ns 130ns 150ns KM44C4100L SBC20

    C4000C

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V410QC CMOS ORAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs, Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref ), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-H) are optional features of this family. All of this family have CÀS-before-


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    PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V410QC 64ms/32ms C4000C

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power co


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    PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C 300mil

    km44c4104

    Abstract: GZ22
    Text: KM44C4104A/AL/ALL/ASL CMOS DRAM 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC tHPC 20ns KM44C4104A/ALVALL/ASL-5 50ns 13ns 90ns KM44C4104A/ALVALL/ASL-6 60ns 15ns 110ns 24ns KM44C4104A/AL/ALL/ASL-7


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    PDF KM44C4104A/AL/ALL/ASL KM44C4104A/ALVALL/ASL-5 KM44C4104A/ALVALL/ASL-6 KM44C4104A/AL/ALL/ASL-7 KM44C4104A/AL/ALL/ASL-8 110ns 130ns 150ns 24-LEAD 400MIL, km44c4104 GZ22

    KM44C4102

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C4102 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: T ie Samsung KM44C4102 is a high speed CMOS 4 ,194,304x4 Dynamic Random Access Memory. Its Design is optimized for high performance applications


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    PDF KM44C4102 KM44C4102 304x4 24-LEAD

    KM44C4100J

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM44C4100 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 4 C 4 1 0 0 is a high speed C M OS 4 ,1 9 4 ,3 0 4 X 4 Dynam ic Random A ccess M em ory. Its design is optim ized for high perform ance applications


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    PDF KM44C4100 cycles/32ms KM44C4100J KM44C4100J

    Untitled

    Abstract: No abstract text available
    Text: KM44C4005C, KM44C4105C CMOS DRAM 4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Quad CAS with Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory celts within the same row, so called Hyper Page Mode. Refresh cycle 2K Ref. or 4K Ref , access


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    PDF KM44C4005C, KM44C4105C 64ms/32ms

    V4004C

    Abstract: No abstract text available
    Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS ORAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K


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    PDF KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C 64ms/32ms V4004C

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003B, KM44C4103B CMOS DRAM 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION T h is is a fa m ily o f 4 ,1 9 4 ,3 0 4 x 4 b it Q u a d C 5 5 w ith F a st P a g e M o d e D R A M s . F a s t P a g e M o d e o ffe rs high s p e e d ra n d o m a c c e s s o f m e m o ry c e lls w ith in th e s a m e row . R e fre s h c y c le 2 K R ef. o r 4 K R e f. , a c c e s s tim e


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    PDF KM44C4003B, KM44C4103B

    TCA 875

    Abstract: 44C4100 KM44C4100-6
    Text: KM44C4100 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KM 44C 4100 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM44C4100 44C4100 24-LEAD TCA 875 KM44C4100-6