Untitled
Abstract: No abstract text available
Text: KM44C4100 CMOS DRAM 4M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 4 1 00 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4100
24-LEAD
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung
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DD147b3
KMM594100N
KMM594100N
KM44C4100J
20-pin
KM41C4000BJ
30-pin
KMM5364100N-6
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KM44C4100J
Abstract: No abstract text available
Text: PRELIMINARY CMOS DRAM KM44C4100 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 4 C 4 1 0 0 is a high speed C M OS 4 ,1 9 4 ,3 0 4 X 4 Dynam ic Random A ccess M em ory. Its design is optim ized for high perform ance applications
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KM44C4100
cycles/32ms
KM44C4100J
KM44C4100J
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TCA 875
Abstract: 44C4100 KM44C4100-6
Text: KM44C4100 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KM 44C 4100 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C4100
44C4100
24-LEAD
TCA 875
KM44C4100-6
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WO4M
Abstract: KMM594
Text: KMM594100N DRAM MODULES 1 M x 9 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KMM594100N is a 4M b i t x 9 D ynam ic RAM high d e n sity m em ory m odule. The Sam sung K M M 5 9 4 1 0 0 N c o n s is t o f tw o 4M b it D R A M s
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KMM594100N
KMM5364100N-6
KMM5364100N-7
M5354100N-8
110ns
130ns
150ns
KMM594100N
KM44C4100J
20-pin
WO4M
KMM594
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC fc.7E D H 7 ^ 4 1 4 2 ÜDlblöS lbD CMOS DRAM KM44C4100 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4100 is a high speed CMOS 4,1 94,30 4X 4 Dynamic Random Access Memory. Its
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KM44C4100
KM44C4100
KM44C4100-6
110ns
KM44C4100-7
130ns
KM44C4100-8
150ns
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PE 8001A
Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1
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KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C464P
PE 8001A
23C1001
23C1010
KM68512
km41c256
TFK 805
TFK 001
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KM424C256Z
Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100
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KM41C256P
KM41C255J
KM41C258Z
KM41C257P
KM41C257J
KM41C257Z
KM41C25BP
KM41C258J
KM41C464P
KM424C256Z
KM41C464
PB20
KM64258
KM68512
KMM5362000
KM23C2
64k 30-pin SIMM
KM23C4000A
KM41C4000BJ
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KMM591000AN
Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC
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KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C464P
KMM591000AN
KM424C256Z
KMM591000B
KM41C464
KMM584000B
4Mx1 nibble
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