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    SEMIT KM616V4000BLT-7L

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    Chip 1 Exchange KM616V4000BLT-7L 1,369
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    Others KM616V4000BLT-7L

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    Chip 1 Exchange KM616V4000BLT-7L 1,000
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    Samsung Semiconductor KM616V4000BLT7L

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    Chip 1 Exchange KM616V4000BLT7L 29
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    KM616V4000B Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616V4000BLR-7L Samsung Electronics 256K x 16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V4000BLR-8L Samsung Electronics 256K x 16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V4000BLRI-10L Samsung Electronics 256K x 16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V4000BLRI-8L Samsung Electronics 256K x 16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V4000BLT-7L Samsung Electronics 256K x 16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V4000BLT-8L Samsung Electronics 256K x 16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V4000BLTI-10L Samsung Electronics 256K x 16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V4000BLTI-8L Samsung Electronics 256K x 16 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM616V4000BLZI-8L Samsung Electronics 256K x 16 Low Power and Low Voltage CMOS Static RAM with 48-CSP(Chip Scale Package) Original PDF

    KM616V4000B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM616V4000BL-L

    Abstract: KM616U4000B
    Text: Back KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996


    Original     		PDF KM616V4000B, KM616U4000B 256Kx16 10/45mA KM616V4000BI, KM616U4000BI KM616V4000BL-L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History History Draft Data Remark 0.0 Initial draft February 4,1997 Preliminary 0.1 Revised - Change datasheet format


    Original     		PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA 25/Typ. 32/Typ. 55/Typ.

    SRAM_256KX16

    Abstract: KM616U4000B KM616U4000C CMOS Process Family SRAM256KX16 data retention TSOP2-400F
    Text: KM616V4000B/C, KM616U4000B/C CMOS SRAM 256Kx16 bit Low Power and Low Voltage • Process Technology : TFT • Organisation : 256K x16 • Power Supply Voltage KM68V4000B/C Family : 3.0~3.6V KM68U4000B/C Family : 2.7~3.3V • Low Data Retention Voltage : 2V Min


    Original     		PDF KM616V4000B/C, KM616U4000B/C 256Kx16 KM68V4000B/C KM68U4000B/C 44-TSOP2-400F/R KM616V4000B/C SRAM_256KX16 KM616U4000B KM616U4000C CMOS Process Family SRAM256KX16 data retention TSOP2-400F

    KM616U4000BLTI-8L

    Abstract: KM616U4000B
    Text: KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996


    Original     		PDF KM616V4000B, KM616U4000B 256Kx16 10/45mA KM616V4000BI, KM616U4000BI KM616U4000BLTI-8L

    lcd m278

    Abstract: 64GS24 M339 m329 lcd marking M117 motorola m120 m131 m233 M317 M346
    Text: MMCPFB1200 Platform Board User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described herein;


    Original     		PDF MMCPFB1200 MMCPFB1200UM/D lcd m278 64GS24 M339 m329 lcd marking M117 motorola m120 m131 m233 M317 M346

    Untitled

    Abstract: No abstract text available
    Text: K6T4016V3B, K6T4016U3B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change: A to B September 19, 1996 Preliminary


    Original     		PDF K6T4016V3B, K6T4016U3B 256Kx16 10/45mA KM616V4000BI, KM616U4000B KM616U4000BI

    nc10 samsung

    Abstract: 278R33 78R33 SP232 RPACK 10k x 9 29EE010 1C651 samsung lcd JTAG nc10 samsung power PP36
    Text: E D C B A SNDS200 Board Ver2.0 NetMCU : S3C4520A DRAM HDLC - 8MB SDRAM - EDO Support - 1 Bank - MCU Input Clock(10MHz) - USB Input Clock(10MHz) - FilterLogic Page2 ROM - 1 Channel RS232 I/F - 1 Channel V.35 I/F - DSUB25 Conn Page3 Page4 hdlc nDTRB nRTSB


    Original     		PDF SNDS200 S3C4520A) 10MHz) RS232 DSUB25 BLM41P02 LCON14 SNDS200 nc10 samsung 278R33 78R33 SP232 RPACK 10k x 9 29EE010 1C651 samsung lcd JTAG nc10 samsung power PP36

    KM6164000B

    Abstract: KM6164000BLI-L KM6164000BL-L KM6164000BLTI10L KM6164000BLTI-7L
    Text: CMOS SRAM KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996


    Original     		PDF KM6164000B 256Kx16 15/75mA 130mA 100pF KM6164000BLI-L KM6164000BL-L KM6164000BLTI10L KM6164000BLTI-7L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet format


    OCR Scan     		PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Tills 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet form at


    OCR Scan     		PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA

    Untitled

    Abstract: No abstract text available
    Text: KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary


    OCR Scan     		PDF KM616V4000B, KM616U4000B 256Kx16 10/45mA KM616V4000BI, KM616U4000BI 100ns KM616V40GGB

    KM68U4000A

    Abstract: No abstract text available
    Text: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 256Kx16 • Power Supply Voltage KM68V4000A Family : 3.3 ± 0.3V KM68U4000A Family : 3.0 ± 0.3V


    OCR Scan     		PDF KM616V4000B, KM616U4000B 256Kx16 256Kx16 KM68V4000A KM68U4000A 44-TSOP KM616V4000B 003b74c

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4th 1997 Preliminary 0.1 Revised - Change datasheet format


    OCR Scan     		PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 10/45mA 55ATyp. 32ATyp 25ATyp

    data retention

    Abstract: No abstract text available
    Text: Preliminary KM616V4000BZ, KM616U4000BZ Family_ CMOS SRAM 256Kx16 Low Power and Low Voltage CMOS Static RAM with 48-CSP Chip Scale Package FEATURES G EN ERA L DESCRIPTION • Process Technology : 0.4^m CMOS • Organization :256Kx16 • Power Supply Voltage


    OCR Scan     		PDF KM616V4000BZ, KM616U4000BZ 256Kx16 48-CSP 256Kx16 KM616V4000BZ KM618U4000BZ data retention

    Untitled

    Abstract: No abstract text available
    Text: KM6164000B Family CMOS SRAM 256Kx16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM616V4000B family is fabricated by SAMSUNG'S Process Technology : 0.4* • CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V •• 10% Low Data Retention Voltage : 2V Min


    OCR Scan     		PDF KM6164000B 256Kx16 KM616V4000B 256Kx16 44-TSOP Operat164000B

    KM616V4000BLTI-8L

    Abstract: No abstract text available
    Text: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4um CMOS • Organization: 256Kx16 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3.0±0.3V


    OCR Scan     		PDF KM616V4000B, KM616U4000B 256Kx16 256Kx16 KM68V4000B KM68U4000B 44-TSOP2-4QOF/R KM616V4000B KM616V4000BLTI-8L

    Untitled

    Abstract: No abstract text available
    Text: KM6164000B Family CMOS SRAM 256KX16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • . • • . The KM616V4000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports var­ ious operating temperature ranges and small package types for


    OCR Scan     		PDF KM6164000B 256KX16 44-TSOP2-40QF/R KM616V4000B KM6164000BL-L KM6164000BLI-L

    Untitled

    Abstract: No abstract text available
    Text: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION FEATURES • P roce ss T e c h n o lo g y : C M O S T h e K M 6 1 6 V 4 0 0 0 B and K M 6 1 6 U 4 0 0 0 B fa m ilie s a re fa b rica te d • O rg a n iz a tio n : 2 5 6 K x 1 6


    OCR Scan     		PDF KM616V4000B, KM616U4000B 256Kx16 44-TS

    Untitled

    Abstract: No abstract text available
    Text: K M 6 8 V 4 0 0 0 B , K M 6 8 U 4 0 0 0 B Fami l y CM OS SRAM P a c u r o e n ! Title 51 2 K x 8 bit L o w P o w e r and L o w Vo l t a g e C M O S Static R A M R e v is io n H a s ta r'y R e v is io n N o . H is to ry D ra ft D ata R e m a rk 0.0 Initial d ra ft


    OCR Scan     		PDF

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6164000B Family S sêujuêûL ü Mê 256Kx16 bit Low Power CMOS Static RAM R p v i< « io n ^ y g gyffl g 8 g H iQg,tn s r f ftr v y ä 8 ft Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B


    OCR Scan     		PDF KM6164000B 256Kx16 15/75mA 130mA

    KM6164000B

    Abstract: KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L
    Text: KM6164000B Family CMOS SRAM 256Kx16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION Process Technology : 0.4* • CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V •• 10% Low Data Retention Voltage : 2V Min Three state output and TTL Compatible


    OCR Scan     		PDF KM6164000B 256Kx16 256Kx16 44-TSOP KM616V4000B KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L

    KM736V789-60

    Abstract: 512k*8 sram KM68U4000A
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -


    OCR Scan     		PDF KM622S6C KM62256D KM68S12A KM68512B KM681OOOB 32Kx8 64KX8 128KX8 KM736V789-60 512k*8 sram KM68U4000A

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B Septem ber 19, 1996 Prel imi nary 1.0 Finalize December 17,1996


    OCR Scan     		PDF KM6164000B 256Kx16 15/75mA 130mA 10OpF