KM6164000BLTI10L Search Results

KM6164000BLTI10L Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KM6164000BLTI-10L		Samsung Electronics	256K x 16 bit Low Power CMOS Static RAM		Original	PDF
KM6164000BLTI-10L		Samsung Electronics	256K x 16 bit Low Power CMOS Static RAM		Original	PDF

KM6164000BLTI10L Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
KM6164000B Abstract: KM6164000BLI-L KM6164000BL-L KM6164000BLTI10L KM6164000BLTI-7L Text: CMOS SRAM KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996	Original	PDF	KM6164000B 256Kx16 15/75mA 130mA 100pF KM6164000BLI-L KM6164000BL-L KM6164000BLTI10L KM6164000BLTI-7L
KM6164000B Abstract: KM6164000BLI-L KM6164000BL-L Text: CMOS SRAM KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize	Original	PDF	KM6164000B 256Kx16 15/75mA 130mA 100pF KM6164000BLI-L KM6164000BL-L
Untitled Abstract: No abstract text available Text: CMOS SRAM KM6164000B Family S sêujuêûL ü Mê 256Kx16 bit Low Power CMOS Static RAM R p v i< « io n ^ y g gyffl g 8 g H iQg,tn s r f ftr v y ä 8 ft Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B	OCR Scan	PDF	KM6164000B 256Kx16 15/75mA 130mA
Untitled Abstract: No abstract text available Text: CMOS SRAM KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision No. History Draft Data Remark 0.0 Initial d ra ft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996	OCR Scan	PDF	KM6164000B 256Kx16 15/75mA 130mA 100pF
KM6164000B Abstract: KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L Text: KM6164000B Family CMOS SRAM 256Kx16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION Process Technology : 0.4* • CMOS Organization : 256Kx16 Power Supply Voltage : Single 5V •• 10% Low Data Retention Voltage : 2V Min Three state output and TTL Compatible	OCR Scan	PDF	KM6164000B 256Kx16 256Kx16 44-TSOP KM616V4000B KM6164000BLI-L KM6164000BL-L KM6164000BLT-5L KM6164000BLT-7L
Untitled Abstract: No abstract text available Text: CMOS SRAM KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B Septem ber 19, 1996 Prel imi nary 1.0 Finalize December 17,1996	OCR Scan	PDF	KM6164000B 256Kx16 15/75mA 130mA 10OpF
Untitled Abstract: No abstract text available Text: CMOS SRAM KM6164000B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28th 1996 Advance 0.1 Revise - Die name change ; A to B September 19th 1996 Preliminary 1.0 Finalize	OCR Scan	PDF	KM6164000B 256Kx16 15/75mA 130mA
Untitled Abstract: No abstract text available Text: KM6164000B Family CMOS SRAM 256KX16 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • . • • . The KM616V4000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports var ious operating temperature ranges and small package types for	OCR Scan	PDF	KM6164000B 256KX16 44-TSOP2-40QF/R KM616V4000B KM6164000BL-L KM6164000BLI-L