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    KMM5361000/A

    Abstract: No abstract text available
    Text: SAMSUNG E LECTRONI CS INC b4E T> • TTbMlMS G 01 4 57 5 KMM5361OOOA1/A1G DhD DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5361000A1 consist of eight CMOS 1M x4 bit


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    KMM5361OOOA1/A1G KMM5361000A1 20-pin 72-pin KMM5361000A1-7 130ns M5361OOOA1 150ns KMM5361000/A PDF

    TIC 1160

    Abstract: No abstract text available
    Text: KMM5361000A1/A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high d e nsity m em ory m odule. The Sam sung KMM5361000A1 co n sist o f eig h t CMOS 1 M x 4 bit


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    KMM5361000A1/A1G 5361000A1 M5361OOOA1 KMM5361000A1-10 100ns 130ns 150ns 180ns KMM5361000A1 TIC 1160 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit


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    KMM5361000A/AG Q014Sh4 361000A bitsX36 20-pin 72-pin 361000A- 130ns PDF

    KMM5361000

    Abstract: "soj 26" dram 80 ns G392
    Text: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361 OOOA is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KMM5361 OOOA consist of eight CMOS 1MX4 bit


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    KMM536100QA/AG/A1 KMM5361 bitsX36 20-pin 72-pin KMM5361000 "soj 26" dram 80 ns G392 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM536100QA/AG/A1 /A1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung K M M 5 3 6 1 0 0 0 A is a 1M b its X 3 6 Dynamic RAM high density m em ory module. The Samsung K M M 5 3 6 1 0 0 0 A con sist o f eight C M OS 1 M X 4 bit


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    KMM536100QA/AG/A1 20-pin 72-pin 361000A- M5361000A/A1: KMM5361000 111il 111111h PDF

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


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    KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ PDF

    KMM5361000A

    Abstract: No abstract text available
    Text: KMM5361000A ORAM MODULES 1M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5361000A is a 1M bitsX 36 Dynamic RAM high density memory module. The Samsung KMM5361000A consist of eight CMOS 1MX4 bit DRAMs in 20-pin SOJ package and four CMOS 1MX 1


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    KMM5361000A KMM5361000A- KMM5361000A- 130ns 150ns 180ns KMM5361000A-10 KMM5361000A 20-pin PDF

    KMM536100

    Abstract: KMM5361000A7
    Text: KMM5361000A/AG DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit DRAMs in 20-pin SOJ package and four CMOS 1 M X 1


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    KMM5361000A/AG 361000A bitsX36 20-pin 22fjF KMM5361OOOA 361000A- 10OOA- KMM536100 KMM5361000A7 PDF

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


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    KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble PDF

    AG10

    Abstract: km416c256 1m maskrom KM68B1002-10
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 - KM41C4000ASL-10


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    KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4000ASL-10 KM41C4001A-7 AG10 km416c256 1m maskrom KM68B1002-10 PDF