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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D B 7 ^ 4 1 4 5 Q010402 4 KMM58256BN DRAM MODULES u M U 5 -n 25 6K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN Is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam­


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    PDF Q010402 KMM58256BN 58256BN 44C256BJ 20-pin 30-pin 22fiF 130ns 58256BN-

    Untitled

    Abstract: No abstract text available
    Text: KMM58256BN DRAM MODULES 2 5 6 K X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam­ sung KM M 58256BN consist of two 1M bit DRAMs


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    PDF KMM58256BN 58256BN 44C256BJ 20-pin 30-pin 58256BN- 130ns 150ns

    44C256BJ

    Abstract: O-256K KMM58256BN
    Text: KMM58256BN DRAM MODULES 256KX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 58256BN is a 2 6 2 ,1 4 4 bit X 8 Dynamic RAM high density memory module. The Sam­ sung KM M 58256BN consist of two 1M bit DRAMs KM 44C256BJ - 2 5 6 K X 4 in 20-pin SOJ packages


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    PDF KMM58256BN 256KX8 58256BN 44C256BJ 20-pin 30-pin KMM58256BN- O-256K KMM58256BN

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


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    PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"