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    L14G2 Price and Stock

    onsemi L14G2

    SENSOR PHOTO 880NM TOP TO206AA
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    Omega Engineering KQXL-14G-24

    QUICK DISCONNECT THERMOCOUPLE AS
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    DigiKey KQXL-14G-24 Bulk 1
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    RS KQXL-14G-24 Bulk 5 Weeks 1
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    Omega Engineering TJ36-CAXL-14G-24

    TRANSITION JN T/C PROBE, LOW DRI
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    Omega Engineering TJ36-CAXL-14G-24-SB-SMPW-M

    T/C Assembly Tj W/Smpw |Omega TJ36-CAXL-14G-24-SB-SMPW-M
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    Newark TJ36-CAXL-14G-24-SB-SMPW-M Bulk 2 1
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    Omega Engineering NB1-CAXL-14G-24

    Thermocouple, Type K, 24", 1204Deg C; Thermocouple Type:K; Sensor Body Material:Super Omegaclad Xl; Lead Length - Imperial:-; Lead Length - Metric:-; Probe Length - Imperial:24"; Probe Length - Metric:609.6Mm Rohs Compliant: Yes |Omega NB1-CAXL-14G-24
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    L14G2 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    L14G2 Fairchild Semiconductor HERMETIC SILICON PHOTOTRANSISTOR Original PDF
    L14G2 Fairchild Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Infrared Photo Detector, Output:Transistor, IC Min. 3mA, BV CEO 45V Scan PDF
    L14G2 General Electric Semiconductor Data Handbook 1977 Scan PDF
    L14G2 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    L14G2 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    L14G2 QT Optoelectronics HERMETIC SILICON PHOTOTRANSISTOR Scan PDF
    L14G2 Telefunken Electronic Photo Detectors / Phototransistors / Photo Pin Diodes Scan PDF

    L14G2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OF LED 55B

    Abstract: Phototransistor L14G3 application L14G1 l14g1 equivalent L14G2 L14G3 L14G3 phototransistor Phototransistor L14G3 L14G2 application note L14G3 equivalent
    Text: HERMETIC SILICON PHOTOTRANSISTOR L14G1 L14G2 L14G3 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) 0.255 (6.47) 0.225 (5.71) 0.030 (0.76) NOM 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) SCHEMATIC 2 1 (CONNECTED TO CASE) COLLECTOR 3 3


    Original     		PDF L14G1 L14G2 L14G3 L14G1/L14G2/L14G3 DS300307 OF LED 55B Phototransistor L14G3 application L14G1 l14g1 equivalent L14G2 L14G3 L14G3 phototransistor Phototransistor L14G3 L14G2 application note L14G3 equivalent

    L14F1 phototransistor datasheet

    Abstract: L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor
    Text: Optoelectronics Hermetic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type TO-18 Detector Package (Convex Lens) BPW36 5 0.5 940 GaAs 1.00 – 30 100 Phototransistor


    Original     		PDF BPW36 BPW37 L14G1 L14G2 L14G3 L14P1 L14P2 L14C2 L14N1 L14N2 L14F1 phototransistor datasheet L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor

    Phototransistor L14F1

    Abstract: Phototransistor L14F L14F1 phototransistor L14G1 phototransistor L14G3 phototransistor L14G2 Phototransistor L14G3 phototransistor 650 nm lens emitter phototransistor Infrared phototransistor TO18
    Text: Hermetic Silicon Photosensors TO-18 Detector Package Convex Lens 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 0.50 (12.7) MIN 0.020 (0.51) 3X Base 0.100 (2.54) 0.050 (1.27) Emitter Part VCE Number (V) Test Conditions Ee ␭p (mW/cm2) (nm) IC (ON)


    Original     		PDF BPW36 BPW37 L14G1 L14G2 L14G3 L14P1 L14P2 BPW38 L14F1 L14F2 Phototransistor L14F1 Phototransistor L14F L14F1 phototransistor L14G1 phototransistor L14G3 phototransistor Phototransistor L14G3 phototransistor 650 nm lens emitter phototransistor Infrared phototransistor TO18

    QRB1134

    Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
    Text: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6


    Original     		PDF 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 QRB1134 H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158

    L14F1 phototransistor datasheet

    Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
    Text: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940


    Original     		PDF QEC112 QEC113 QEC121 QEC122 QEC123 QED233 QED234 QED633 QED634 QED121 L14F1 phototransistor datasheet L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor

    L14g1

    Abstract: No abstract text available
    Text: 3875081 G E SO LID STATE 0 1E 19662 D G0S71EM H • HAS Optoelectronic Specifications_ 37E HARRI S SEMICOND SECTOR Light Detector 4305271 D Planar Silicon Photo Transistor L14G1,L14G2,L14G3 T he G E Solid State L I4 G I th ru LI4G 3 are highly sensitive N P N Planar Silicon P hototransistors.


    OCR Scan     		PDF G0S71EM L14G1 L14G2 L14G3 92CS-42662 92CS-429S1

    L14GI

    Abstract: l14g1 equivalent L14G3 L14G3 equivalent L14G2 l14g2 equivalent
    Text: Detector Specifications L14G1, L14G2, L14G3 Light Detector Planar Silicon Phototransistor absolute m axim um ratings: P LAN E T h e L14GI th ro u g h L14G3 are highly sensitive NPN P lan ar Silicon P hototransistors. T hey are h o u se d in a T O -1 8 style herm etically sealed


    OCR Scan     		PDF L14G1, L14G2, L14G3 L14GI L14G3 LED55Bi IL14G l14g1 equivalent L14G3 equivalent L14G2 l14g2 equivalent

    2R70

    Abstract: L14G3 L14G1 L14G1 phototransistor L14G2 L14G3 phototransistor ic iR light control L14G-1
    Text: Detector Specifications L14G1, L14G2, L14G3 Light Detector Planar Silicon Phototransistor T h e L14G1 th ro u g h L14G3 are high!}' sensitive NPN P la n a r Silicon P h ototransistors. T h ey are h o u se d in a T O -18 style herm etically sealed package with lens cap. T h e L 14G series is ideal fo r use in optoelectronic


    OCR Scan     		PDF L14G1, L14G2, L14G3 L14G1 L14G3 2R70 L14G1 phototransistor L14G2 L14G3 phototransistor ic iR light control L14G-1

    drive circuit for L14G3

    Abstract: l14g2 L14G1 l14g3 telefunken ta 400 L14G3 phototransistor L14G1 phototransistor
    Text: TELEFUNKEN ELECTRONIC &R2DCni QOOaSRb S 2 5 2 P L14G1 S 2 5 3 P L14G2 S 2 5 4 P L14G3 17E D TTlILillFMJKtiKl electronic C/Mtivf'fechnotoO«« T - f h c[ Silicon NPN Epitaxial Planar Phototransistor Applications: Detector in electronic control and drive circuits


    OCR Scan     		PDF L14G1 L14G2 L14G3 20CHb drive circuit for L14G3 l14g3 telefunken ta 400 L14G3 phototransistor L14G1 phototransistor

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    L14F1 PHOTOTRANSISTOR

    Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 PHOTOTRANSISTOR 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1

    Untitled

    Abstract: No abstract text available
    Text: [ * 9 GaAs INFRARED EMITTING DIODE ipmutïiftiits 1N6266 The 1N6266 is a 940nm LED in a narrow angle, T M6 package. SEATIN G • Good optical io mechanical alignment SYMBOL A •8>b D Ü0D. a e, h .1 . k i. u JNCHES Ml» MAX. -255 .016 ,203 tao .021


    OCR Scan     		PDF 1N6266 1N6266 940nm ST19W 25mW/cjn2. L14G1 L14G2

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    st 1086

    Abstract: L14G1 phototransistor L14G1 ST-1605 ST1087
    Text: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister m ounted in a narrow angle, TO -18 package. FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. A .225 .255 5.71 6.47


    OCR Scan     		PDF L14G1/2/3 ST1605 533mm T1082 ST1087 L14G1 LED55B) st 1086 L14G1 phototransistor L14G1 ST-1605 ST1087

    OSI photo detector

    Abstract: 1N6266
    Text: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode <i£•L -• •-A—— ■M a 1 t 00 *?' T he 1N6266 is a gallium-arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength o f 940


    OCR Scan     		PDF 1N6266 1N6266 L14G1. OSI photo detector

    MOC5010

    Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
    Text: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t


    OCR Scan     		PDF 1N6264 1N6265 1N6266 4N25A 4N29A 4N32A 4N38A L14C2 MOC5010 MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143

    2N5777

    Abstract: L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5777 L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3

    PHOTO DIODE LED55C

    Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 PHOTO DIODE LED55C ssl55c photo transistor L14F1 ssl55b SSL55CF Direct replacement for ssl55c

    ST1083

    Abstract: L14G3 phototransistor L14G1 phototransistor st1086 ST108 st1084 Phototransistor L14G3 st1082 L14G1 L14G2
    Text: HERMETIC SILICON PHOTOTRANSISTOR BFIOELEClHftlf SCS L14G1/2/3 PACKAGE DIMENSIONS DESCRIPTION The L14G series is a silicon phototransister mounted in a narrow angle, TO-18 package. FEATURES SYMBOL A fa e ei h J k L oc INCHES MIN. MAX. .225 ,255 .016 .021 .209


    OCR Scan     		PDF L14G1/2/3 ST1333 ST1605 533mm) ST1083 ST1086 ST1084 LED55B) ST1085 ST1083 L14G3 phototransistor L14G1 phototransistor st1086 ST108 Phototransistor L14G3 st1082 L14G1 L14G2

    LM 8105

    Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
    Text: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17


    OCR Scan     		PDF 1N6264 1N6265 1N6266 6N135 6N136 6N137 6N138 6N139 740L6001 740L6010 LM 8105 SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t

    TIL145

    Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
    Text: Quick-Reference Product Guide Industry Replacement Guide T h e sug g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts fo r th e p ro d u c ts listed. H a r r is assum es n o re sp o n s ib ilit v a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t


    OCR Scan     		PDF 1N6264 1N6265 1N6266 H21A1 H21B1 H22A2 TIL145 ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A

    Untitled

    Abstract: No abstract text available
    Text: Emitter Specifications 1N6266 Infrared Emitter Gallium Arsenide Infrared Emitting Diode T h e 1N6266 is a galH um -arsenide, in fra re d em itting d iode w hich em its n o n -c o h e re n t, in fra re d energy with a p eak w avelength o f 940 n an o m eters. T h is device is ch aracterized to precisely d efin e th e


    OCR Scan     		PDF 1N6266 1N6266

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    ST1009

    Abstract: st1020 IN6266 L14G1 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332 1N6266
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE DIMENSIONS DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATING FEATURES G ood optical to m echanical alignm ent SYMBOL INCHES MIN. A MILLIMETERS MAX. MIN. .255 NOTES MAX.


    OCR Scan     		PDF 1N6266 1N6266 940nm ST1604 L14G1 L14G2 L14G1 L14G2 L14G1. IN6266 ST1009 st1020 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332