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    L14P1 Search Results

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    L14P1 Price and Stock

    Hirose Electric Co Ltd DF19L-14P-1H(52)

    CONN HEADER BRD EDGE 14P 1MM
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    DigiKey DF19L-14P-1H(52) Cut Tape 1,191 1
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    DF19L-14P-1H(52) Reel 1,000 1,000
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    DF19L-14P-1H(52) Digi-Reel 1
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    Avnet Americas DF19L-14P-1H(52) Reel 12 Weeks 1,000
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    Mouser Electronics DF19L-14P-1H(52) 2,913
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    Newark DF19L-14P-1H(52) Cut Tape 1,000 1
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    DF19L-14P-1H(52) Reel 1,000
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    TME DF19L-14P-1H(52) 1,000
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    Sager DF19L-14P-1H(52) 1,000
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    Hirose Electric Co Ltd DF19L-14P-1H(54)

    CONN HEADER BRD EDGE 14P 1MM
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    DigiKey DF19L-14P-1H(54) Cut Tape 265 1
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    DF19L-14P-1H(54) Reel 1,000
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    Avnet Abacus DF19L-14P-1H(54) 1,000
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    onsemi L14P1

    SENSOR PHOTO 880NM TOP TO206AA
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    Hirose Electric Co Ltd DF19L-14P-1H(59)

    CONN HEADER BRD EDGE 14P 1MM
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    DigiKey DF19L-14P-1H(59) Reel 1,000
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    Hirose Electric Co Ltd DF19L-14P-1H(56)

    CONN HEADER BRD EDGE 14P 1MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DF19L-14P-1H(56) Reel 1,000
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    L14P1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    L14P1 Fairchild Semiconductor HERMETIC SILICON PHOTOTRANSISTOR Original PDF
    L14P1 Fairchild Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Infrared Photo Detector, Output:Transistor , IC Min. 4mA, BV CEO 30V Scan PDF
    L14P1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    L14P1 QT Optoelectronics HERMETIC SILICON PHOTOTRANSISTOR Scan PDF

    L14P1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L14P1

    Abstract: L14P2 1N6265
    Text: HERMETIC SILICON PHOTOTRANSISTOR L14P1 L14P2 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) 0.255 (6.47) 0.225 (5.71) 0.030 (0.76) NOM 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) SCHEMATIC 2 1 (CONNECTED TO CASE) COLLECTOR 3 3 0.038 (0.97)


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    PDF L14P1 L14P2 L14P1/L14P2 DS300309 L14P1 L14P2 1N6265

    L14P1

    Abstract: phototransistor peak wave sensitivity 600 nm phototransistor 500-600 nm 1N6265 L14P2
    Text: HERMETIC SILICON PHOTOTRANSISTOR L14P1 L14P2 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) 0.255 (6.47) 0.225 (5.71) 0.030 (0.76) NOM 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) SCHEMATIC 2 1 (CONNECTED TO CASE) COLLECTOR 3 3 0.038 (0.97)


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    PDF L14P1 L14P2 L14P1/L14P2 DS300309 L14P1 phototransistor peak wave sensitivity 600 nm phototransistor 500-600 nm 1N6265 L14P2

    L14F1 phototransistor datasheet

    Abstract: L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor
    Text: Optoelectronics Hermetic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type TO-18 Detector Package (Convex Lens) BPW36 5 0.5 940 GaAs 1.00 – 30 100 Phototransistor


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    PDF BPW36 BPW37 L14G1 L14G2 L14G3 L14P1 L14P2 L14C2 L14N1 L14N2 L14F1 phototransistor datasheet L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor

    Phototransistor L14F1

    Abstract: Phototransistor L14F L14F1 phototransistor L14G1 phototransistor L14G3 phototransistor L14G2 Phototransistor L14G3 phototransistor 650 nm lens emitter phototransistor Infrared phototransistor TO18
    Text: Hermetic Silicon Photosensors TO-18 Detector Package Convex Lens 0.209 (5.31) 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 0.50 (12.7) MIN 0.020 (0.51) 3X Base 0.100 (2.54) 0.050 (1.27) Emitter Part VCE Number (V) Test Conditions Ee ␭p (mW/cm2) (nm) IC (ON)


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    PDF BPW36 BPW37 L14G1 L14G2 L14G3 L14P1 L14P2 BPW38 L14F1 L14F2 Phototransistor L14F1 Phototransistor L14F L14F1 phototransistor L14G1 phototransistor L14G3 phototransistor Phototransistor L14G3 phototransistor 650 nm lens emitter phototransistor Infrared phototransistor TO18

    QRB1134

    Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
    Text: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6


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    PDF 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 QRB1134 H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158

    Untitled

    Abstract: No abstract text available
    Text: EO HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14P1/2 PACKAGE DIMENSIC The L14P series is a silicon phototransister mounted in a narrow angle, TO-18 package. 3 FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. 6.47 A .225 .255 5.71 èb .016 .021


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    PDF L14P1/2 00mW/Â at2870Â 74bbfl51 0D0b434

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLI D STATE 0 1 E 1 9 6 66 D Optoelectronic Specifications_ HA RR IS S E flI CO N D S E C T O R Light Detector High 37E D M 4 3 0 2 27 1 0 0 2 7 1 2 8 m 1 «HAS Sensitivity Phototransistor L14P1, L14P2 T h e G E Solid S ta te L I4 P 1 and L 1 4 P 2 are N PN Silico n Phototransistors in a T O -18 style herm etically


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    PDF L14P1, L14P2 S-429S

    Untitled

    Abstract: No abstract text available
    Text: Detector Specifications _ L14P1, L14P2 Light Detector High Sensitivity Phototransistor T h e L 14P I a n d LI 4P2 a r e \ P N S ilico n P h o to tra n s is to rs in a T O -1 8 style h e rm e tic a lly s e a le d p a c k a g e . T h e d e v ic e h a s a to p -lo o k in g le n s c a p a n d


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    PDF L14P1, L14P2

    ST1106

    Abstract: ST1102 ST-1102 ST1105 L14P1 ST110 L14P2 ST1104 ST1607
    Text: nsil M HERMETIC SILICON PHOTOTRANSISTOR i OPTOELECTRONICS L14P1/2 PACKAGE DIMENSIONS The L14P series is a silicon phototransister mounted in a narrow angle, TO-18 package. - 4>D- I— DESCRIPTION ^>DI — • h A i 0b-Q- SYM B O L FEATURES IN C H ES


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    PDF L14P1/2 ST1607 N6264) 300usec ST1106 ST1104 100S2 ST1105 ST1106 ST1102 ST-1102 L14P1 ST110 L14P2 ST1104

    ST1106

    Abstract: ST1104
    Text: ¡mOELEti HERMETIC SILICON PHOTOTRANSISTOR ICS L14P1/2 PACKAGE DIMENÍBI The L14P series is a silicon phototransister mounted in a narrow angle, TO-18 package. II Wenùmû SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. A ,225 .255 5.71 6.47 <f>b .016 .021 .407


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    PDF L14P1/2 ST1607 ST1103 ST1106 ST1104 ST1106 ST1104

    Untitled

    Abstract: No abstract text available
    Text: Detector Specifications L14P1, L14P2 Light Detector High Sensitivity Phototransistor T h e LI 4P1 a n d L14P2 a re NPN Silicon P hototransistors in a T O -18 style herm etically sealed package. T h e device h as a top-looking lens cap a n d is ideally suited for applications req u irin g h ig h sensitivity in the


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    PDF L14P1, L14P2 L14P2

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC4069U B P/U B F/U B FN/U B FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4069UBP, TC4069UBF, TC4069UBFN, TC4069UBFT N ote The JE D E C SO P (FN) is not a v aila b le in Japan TC4069UB HEX INVERTER TC4069UB contains six circuits of inverters. Since the


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    PDF TC4069U TC4069UBP, TC4069UBF, TC4069UBFN, TC4069UBFT TC4069UB IP14-P-300-2 P14-P-300-1 14PIN

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    L14Gl

    Abstract: L14F
    Text: OPTOELECTRONICS HERMETIC SILICON INFRARED PHOTOSENSORS Metal Can Convex Lens R e c e p tio n A n g le @ 1/2 P o w e r b v c e o • C E O /V c e n A /(V ) m ax m in m ax u n its (V ) m in ±10° 6.00 - mA 45 100/10 BPW37 ±10° 3.00 - mA 45 100/10 1 L14G1


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    PDF BPW36 BPW37 L14G1 L14G2 L14G3 L14P1 L14P2 BPW38 L14F1 L14F2 L14Gl L14F

    MOC5010

    Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
    Text: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t


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    PDF 1N6264 1N6265 1N6266 4N25A 4N29A 4N32A 4N38A L14C2 MOC5010 MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143

    74ACOO

    Abstract: 74ACO
    Text: TO SH IB A TC74AC00P/F/FN/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74AC00P, TC74AC00F, TC74AC00FN, TC74AC00FT QUAD 2 -INPUT NAND Note The JE D E C SOP (FN) is not available in Japan. GATE The TC74AC00 is an advanced high speed CMOS 2-INPUT


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    PDF TC74AC00P/F/FN/FT TC74AC00P, TC74AC00F, TC74AC00FN, TC74AC00FT TC74AC00 14PIN 200mil OP14-P-300-1 74ACOO 74ACO

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74HCT04AP/AF/AFN TO SH IBA CM OS D IG ITA L IN TEG R A TED CIRCU IT SILICON M O N O LITH IC TC74HCT04AP, TC74HCT04AF, TC74HCT04AFN Note The JED EC SO P (FN) is not available in Japan. HEX INVERTER The TC74H CT04A is a high speed CMOS IN V E R T E R


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    PDF TC74HCT04AP/AF/AFN TC74HCT04AP, TC74HCT04AF, TC74HCT04AFN TC74H CT04A e08-07 HCT04 14PIN DIP14-P-300-2

    TC4069U

    Abstract: No abstract text available
    Text: TOSHIBA TC4069U B P/U B F/U B FN/U B FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4069UBP, TC4069UBF, TC4069UBFN, TC4069UBFT N ote The JE D E C SO P (FN) is not a v aila b le in Japan TC4069UB HEX INVERTER TC4069UB contains six circuits of inverters. Since the


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    PDF TC4069U TC4069UBP, TC4069UBF, TC4069UBFN, TC4069UBFT TC4069UB IP14-P-300-2 P14-P-300-1 L14-P-150-3/5

    74LS1601

    Abstract: IC 74LS160 74LS160-163 74LS160 function of the ic TC74HC161 TC74HC161A TC74HC161AF TC74HC161AFN TC74HC161AP TC74HC163AF
    Text: TOSHIBA TC74HC161 ,163AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC161AP, TC74HC161AF, TC74HC161AFN TC74HC163AP, TC74HC163AF, TC74HC163AFN SYNCHRONOUS PRESETTABLE 4 -B IT COUNTER TC74HC161AP/AF/AFN BINARY, ASYNCHRONOUS CLEAR Note


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    PDF TC74HC161 163AP/AF/AFN TC74HC161AP, TC74HC161AF, TC74HC161AFN TC74HC163AP, TC74HC163AF, TC74HC163AFN TC74HC161AP/AF/AFN TC74HC163AP/AF/AFN 74LS1601 IC 74LS160 74LS160-163 74LS160 function of the ic TC74HC161A TC74HC161AF TC74HC161AP TC74HC163AF

    TC4069 OSCILLATOR

    Abstract: TC4069 DIP14-P-300-2 TC4069UB TC4069UBF TC4069UBFN TC4069UBFT TC4069UBP
    Text: TO SHIBA TC4069UB P/U B F/U B FN/U B FT TO SH IBA CM OS D IG ITAL IN TEGRATED CIRCU IT SILICON M ONOLITHIC TC4069UBP, TC4069UBF, TC4069UBFN, TC4069UBFT Note The JEDEC SOP (FN) is not available in Japan TC4069UB HEX INVERTER TC4069UB contains six circuits of inverters. Since the


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    PDF TC4069 TC4069UBP, TC4069UBF, TC4069UBFN, TC4069UBFT TC4069UB DIP14-P-300-2 OP14-P-300-1 SOL14-P-150-1 TC4069 OSCILLATOR TC4069UBF TC4069UBFN TC4069UBFT TC4069UBP

    LM 8105

    Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
    Text: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17


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    PDF 1N6264 1N6265 1N6266 6N135 6N136 6N137 6N138 6N139 740L6001 740L6010 LM 8105 SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t

    TIL145

    Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
    Text: Quick-Reference Product Guide Industry Replacement Guide T h e sug g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts fo r th e p ro d u c ts listed. H a r r is assum es n o re sp o n s ib ilit v a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t


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    PDF 1N6264 1N6265 1N6266 H21A1 H21B1 H22A2 TIL145 ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A _ TC74ACT08P/F/FN/FT TO SH IBA CM OS D IGITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74ACT08P, TC74ACT08F, TC74ACT08FN, TC74ACT08FT QUAD 2 -INPUT AND Note The JEDEC SOP (FN) is not available in japan GATE


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    PDF TC74ACT08P/F/FN/FT TC74ACT08P, TC74ACT08F, TC74ACT08FN, TC74ACT08FT TC74ACT08 14PIN DIP14-P-300-2 14PIN