LN62S
Abstract: PN120S PNZ120S
Text: Phototransistors PNZ120S PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use
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PNZ120S
PN120S)
LN62S
PN120S
PNZ120S
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"Photo Interrupter" Application Note
Abstract: LN62S PN123S PNZ123S
Text: Phototransistors PNZ123S PN123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.)
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PNZ123S
PN123S)
LN62S
"Photo Interrupter" Application Note
PN123S
PNZ123S
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ0120 Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use Fast response : tr, tf = 3 µs typ.
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PNZ0120
LN62S
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Untitled
Abstract: No abstract text available
Text: Phototransistors PN120S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an optical controller M Di ain sc te on na tin nc ue e/ d Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Wide directional sensitivity for easy use
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PN120S
LN62S
2856K)
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN62S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems ø3.0±0.15 M Di ain sc te on na tin nc ue e/ d 3.75±0.3 2.0±0.2 This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers.
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LN62S
PN120S
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LN62S
Abstract: PNZ123S
Text: Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs typ.
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PNZ123S
LN62S
PNZ123S
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LN62S
Abstract: PN120S
Text: Infrared Light Emitting Diodes LN62S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems ø3.0±0.15 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g
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LN62S
PN120S
LN62S
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Em itting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : PQ = 3.5 mW typ.
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LN62S
PN120S
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"Photo Interrupter"
Abstract: OPTICAL INTERRUPTER LN62S PN123S
Text: Panasonic Phototransistors PN123S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an photo interrupter • Features • High sensitivity • Low dark current • Fast response : tr = 3.5 |^s typ. • Small size (0 3) ceramic package
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PN123S
LN62S
"Photo Interrupter"
OPTICAL INTERRUPTER
PN123S
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PN120S
Abstract: LN62S
Text: Panasonic Phototransistors PN120S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an optical controller • Features • H igh sensitivity • W ide directio n al sensitivity fo r easy use • F a st re sp o n se : tr, tj = 3 |xs typ.
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PN120S
LN62S
OvV30
/\X\Vi20
PN120S
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Untitled
Abstract: No abstract text available
Text: Panasonic Phototransistors PN123S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an photo interrupter • Features • H ig h sensitivity • L ow d ark cu rren t • F a st re sp o n se : tr = 3.5 |^s typ. • S m all size (0 3) ceram ic pack ag e
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PN123S
LN62S
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN62S G aAs Infrared Light Emitting Diode For optical control systems This product can be com bined with various types o f silicon photodetectors such as the PN120S to form optical controllers. • Features • H igh-pow er output, high-efficiency : P Q = 3.5 m W typ.
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LN62S
PN120S
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Untitled
Abstract: No abstract text available
Text: Panasonic Phototransistors PN120S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an optical controller • Features • • • • H igh sensitivity W ide directional sensitivity for easy use Fast response : tr, % = 3 jlls typ.
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PN120S
LN62S
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Infrared Emitting Diode
Abstract: panasonic 8090 LN62S PN120S GaAs 850 nm Infrared Emitting Diode
Text: Panasonic Infrared Light Emitting Diodes LN62S GaAs Infrared Light Emitting Diode For optical control systems This product can be combined with various types of silicon photodetectors such as the PN120S to form optical controllers. • Features • High-power output, high-efficiency : P0 = 3.5 mW typ.
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LN62S
PN120S
Infrared Emitting Diode
panasonic 8090
LN62S
GaAs 850 nm Infrared Emitting Diode
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L2683-01
Abstract: SE314 122dl 18AF tokin 473 5.5v SE306 SE307-C SE308 SE313 SE3161L
Text: - • it ¥ H it U tl £ Po min imW f t 14 tSL f t If Ik I f n = 25*0 (T„=25*C ) WS W f± ; t- 4^ # : f t I f Xp /iSIEiiS if- is. m I f Pi> m * T„pr (m A) min!mW'sr' (mA) ty p (V) m a x (V) (m A) ty p (nm) ty p (deg) (m A) (m W ) rc ) - - 0.2 10 1.1
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SE306
SE307-C
SE308
SE313
typ25
SE314
L-154
SE3161L)
L-155
L-137
L2683-01
SE314
122dl
18AF
tokin 473 5.5v
SE307-C
SE308
SE313
SE3161L
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LNC703PS
Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Text: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ
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LN124W
P5F02-1
PSF02-1
LN155
LN184
LN189L
PR002-1
PR002-2
LNC703PS
LN9P01S
P50024
LNA4401
PR0022
LN68
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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LT3SA
Abstract: LN9705S LN143 LN7301F P700 LN122WF LN122WS LN124W LN145W P3002.2
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Package Appli cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1 40
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LN143
LN122WS
MR02-1
LN122WF
MF02-1
LN124W
LN145W
P5F02-2
PSF02-1
LT3SA
LN9705S
LN7301F
P700
P3002.2
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LN9705
Abstract: LN143 LN122WF LN122WS LN124W LN145W C3021 MR02-1 mr02 LN9705S
Text: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Pac kage Appli cation À L 9 VF tr.tf Po If min. max. typ. typ. typ. (mA) (mW) (V) (nm) (deg.) (ns) Type No. No. For 40 4.5 2.2 TO-18 LN122WS (Small) MR02-1 40 2 2.2 LN122WF MF02-1
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LN143
LN122WS
MR02-1
LN122WF
MF02-1
LN124W
LN145W
P5F02-2
PSF02-1
LN9705
C3021
mr02
LN9705S
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OLD232
Abstract: OLD122 OLD222 TLR215A 122dl 18AF 1kl3 OLD223 OLD123 OLD124
Text: -2 2 1 'ä • 'Jt M £ n 1 t tH tr r, Kt Po min 'mW: ¡m A 1 OLD122 3.4 100 OLD123 2.4 100 OLD124 2.0 60 OLD125 1.0 OLD127 0.3 öt1 14 Hfl & s 'T „ = 2 o c > 17^, - 25 C ! «L Q-'- V m if- t- m n Xp d\ I f Pi> mW1 St iffi ffi n T„Pr i.mA! ty p V
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OLD122
OLD123
O-187
OLD124
OLD125
OLD127
OLD222
OLD222H
L-128
L-137
OLD232
OLD122
OLD222
TLR215A
122dl
18AF
1kl3
OLD223
OLD123
OLD124
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SLR-981A
Abstract: SLR-932A SLR-938C GL360 l30 tf 125 SLR981A SLR-889C SLR-935A 122dl L146
Text: 223- - * m. & % i. iti t l m •± n Po I f IE I f { r „ = 2 5 ic X „ = 25°C) ft m n t 5* m . ne ui V * I f Xr m gf] 1T- m I f Po 1% 51- m 1S m in 1mW) (m A ) min(mW'sr) (m A ) t y p (V ) (m A ) t y p (n m ) (m A ) (m W ) CC) S L R -9 3 2 A t y p 7 .5
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SLR-932A
SLR-938C
SLR-935A
SLR-981A
SLR-989A
SLR-832C
SLR-838C
1L-126
L-127
L-128
SLR-981A
SLR-932A
SLR-938C
GL360
l30 tf 125
SLR981A
SLR-889C
SLR-935A
122dl
L146
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SIH-55SB3F
Abstract: SIR-56SB3 122dl L-117 L-119 LN155 LN175 LN189L LN57 LN58
Text: 229- - n. % • ± s; £ LN 58 tt & i t ¿fe t¡ £ T & w 14 m « r± * m n m & is. m mWM. ft Xp 0 2 I F Pd T„pr m a x V ty p (n m ) t y p fd e g ) (ra A ) im W ) rc > 1 .5 50 950 ±35 50 75 - L -1 1 6 - 1 .5 50 950 ±18 50 75 - L -1 1 7 I f im A ' 1 .8
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25-Cl
L-116
L-117
L-118
LN155
L-119
LN175
LN189L
L-120
SIH-55SB3F
SIR-56SB3
122dl
L-119
LN155
LN175
LN57
LN58
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TO44 package
Abstract: 09846 09843 LN61C LN62S LN65 PN120S infrared 950nm PU160 PANASONIC FL
Text: PANASONIC INDL/ELEK-CSEMI}. 72C D | t.=]32fi54 DOCHaqS 3 | 6932852 PANASONIC IN DL * E L E C T R O N IC 7T 7 K E U ? h D - " J O ? ! W 72C 0 9 84 2 _ ~ X D _ IN61C LN61C T- G aA s K / G a A s Infrared Light Em itting Diode Optical Control Systems
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LN61C
LN61C
950nm
100Hz,
75max.
10iis
TO44 package
09846
09843
LN62S
LN65
PN120S
infrared 950nm
PU160
PANASONIC FL
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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MN115P
MN116P
MN1201A
MN1201M
MN1201S
MN1202M
MN1204A
MN1204B
MN1204E
MN1204F
an6512n
mn1225
MN1280
mn6520
MN6130
MN6147C
MN12C261D
MN12C201D
MN3107
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