Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ123S PN123S Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package 2.0±0.2 For optical control systems
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PNZ123S
PN123S)
CTRLR102-001
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package
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2002/95/EC)
PNZ123S
PN123S)
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"Photo Interrupter" Application Note
Abstract: LN62S PN123S PNZ123S
Text: Phototransistors PNZ123S PN123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.)
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PNZ123S
PN123S)
LN62S
"Photo Interrupter" Application Note
PN123S
PNZ123S
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ123S PN123S Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package 2.0±0.2 For optical control systems
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PNZ123S
PN123S)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package
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2002/95/EC)
PNZ123S
PN123S)
CTRLR102-001
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PNZ123S
Abstract: PN123S
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type For optical control systems • Features High sensitivity Low collector-emitter cutoff current (base open) Fast response: tr = 3 s (typ.)
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2002/95/EC)
PNZ123S
PN123S)
PNZ123S
PN123S
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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"Photo Interrupter"
Abstract: OPTICAL INTERRUPTER LN62S PN123S
Text: Panasonic Phototransistors PN123S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an photo interrupter • Features • High sensitivity • Low dark current • Fast response : tr = 3.5 |^s typ. • Small size (0 3) ceramic package
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PN123S
LN62S
"Photo Interrupter"
OPTICAL INTERRUPTER
PN123S
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Untitled
Abstract: No abstract text available
Text: Panasonic Phototransistors PN123S Silicon NPN Phototransistor For optical control systems Can be combined with LN62S to form an photo interrupter • Features • H ig h sensitivity • L ow d ark cu rren t • F a st re sp o n se : tr = 3.5 |^s typ. • S m all size (0 3) ceram ic pack ag e
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PN123S
LN62S
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PT-103
Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
Text: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04
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PT108A
PT-101
PH109
PT-101
PH110
PT-70
PT-102
PH1161L)
PT-91
PT-92
PT-103
PH110
PT108A
pt77
PH114
PH109
PN101
PN101F
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transistor 30021
Abstract: PNA4602M
Text: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light
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PN3206
PN312D
PN322D
PN3112
PN3108
PNA3201F
PN3405
PN316K2
PN3116
PN3624K
transistor 30021
PNA4602M
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1k88
Abstract: PN3634 1R88 6N3P PNA4602M
Text: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206
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PN3104
PN3106
PN3206
PN312D
PFES04-1N
PFOS04-2N
PN322D
PN3105
PN3112
1k88
PN3634
1R88
6N3P
PNA4602M
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PN7103
Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD
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PN101/102*
PN101F/102F*
ML02-1/
ML03-1
MF02-1/
PN312E
PF204-3
PN3104
PFU04-5
PN106*
PN7103
pf204
mr03
C302
C5031
PNA4602M
ON1501
PN334
PN106
PNA4602
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bt35f
Abstract: mf03 c PNA4602M
Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division
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PN312E
PN3104
PN3106
PN3206
PN312D
PN322D
PN3105
PN3112
PN3108
PN3107
bt35f
mf03 c
PNA4602M
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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zjy 2b
Abstract: IT9010 LN62S PN120S PN121S PN123S T-9856 UCA 1400
Text: PANASONIC INDL/ELEK-CSEMI} 7SC D | bT3SflSM □ O O c!flfll4 fl | _ 6 9 3 2 8 52 P ANASONIC IN D L * ELECTRONIC 72C 0 9 8 8 4 D PN120S PN120S I- H I - G l '> ij u y NPN rhh / S i NPN Phototransistor Optical Control Systems LN62S £<7 Mfrnt>-&T'7i-s h -f Matched
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bT32flS4
PN120S
LN62S
zjy 2b
IT9010
LN62S
PN120S
PN121S
PN123S
T-9856
UCA 1400
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