Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109F (PN109F) Silicon planar type Unit: mm φ4.6±0.15 Glass window 4.5±0.2 For optical control systems • Features 12.7 min. • Flat window design which is suited to optical systems

PT-103

Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
Contextual Info: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04

Contextual Info: Panasonic Phototransistors PN109F Silicon NPN Phototransistor Unit : mm For optical control systems • Features • F la t w in d o w design w hich is suited to optical system s • B u ilt-in filte r to c u to ff v isib le lig h t fo r re d u cin g am b ie n t lig h t noise

phototransistor visible light

Abstract: PN109F
Contextual Info: Panasonic Phototransistors PN109F Silicon NPN Phototransistor For optical control systems • Features • Flat window design which is suited to optical systems • Built-in filter to cutoff visible light for reducing ambient light noise • Peak sensitivity wavelength matched with infrared light emitting

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109F (PN109F) Silicon planar type Unit: mm φ4.6±0.15 Glass window 4.5±0.2 For optical control systems M Di ain sc te on na tin nc ue e/ d • Features 12.7 min. • Flat window design which is suited to optical systems

PN109F

Abstract: PNZ109F di 856
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109F (PN109F) Silicon planar type Unit: mm φ4.6±0.15 Glass window 4.5±0.2 For optical control systems • Features 12.7 min. • Flat window design which is suited to optical systems

Contextual Info: Phototransistors PNZ109F PN109F Silicon planar type Unit: mm φ4.6±0.15 Glass window 4.5±0.2 For optical control systems • Features 12.7 min. • Flat window design which is suited to optical systems • Built-in filter to cutoff visible light for reducing ambient light noise

PN109F

Abstract: PNZ109F
Contextual Info: Phototransistors PNZ109F PN109F Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting

PN109F

Abstract: PNZ109F
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109F (PN109F) Silicon planar type Unit: mm φ4.6±0.15 Glass window M Di ain sc te on na tin nc ue e/ d 4.5±0.2 For optical control systems • Features 12.7 min. ue pl d in

transistor 30021

Abstract: PNA4602M
Contextual Info: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light

1k88

Abstract: PN3634 1R88 6N3P PNA4602M
Contextual Info: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206

PN126S

Abstract: ON1503 PN7103
Contextual Info: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli­ Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10

PN7103

Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD

bt35f

Abstract: mf03 c PNA4602M
Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli­ cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)