Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109F (PN109F) Silicon planar type Unit: mm φ4.6±0.15 Glass window 4.5±0.2 For optical control systems • Features 12.7 min. • Flat window design which is suited to optical systems
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2002/95/EC)
PNZ109F
PN109F)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109F (PN109F) Silicon planar type Unit: mm φ4.6±0.15 Glass window 4.5±0.2 For optical control systems M Di ain sc te on na tin nc ue e/ d • Features 12.7 min. • Flat window design which is suited to optical systems
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2002/95/EC)
PNZ109F
PN109F)
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PN109F
Abstract: PNZ109F di 856
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109F (PN109F) Silicon planar type Unit: mm φ4.6±0.15 Glass window 4.5±0.2 For optical control systems • Features 12.7 min. • Flat window design which is suited to optical systems
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2002/95/EC)
PNZ109F
PN109F)
PN109F
PNZ109F
di 856
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ109F PN109F Silicon planar type Unit: mm φ4.6±0.15 Glass window 4.5±0.2 For optical control systems • Features 12.7 min. • Flat window design which is suited to optical systems • Built-in filter to cutoff visible light for reducing ambient light noise
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PNZ109F
PN109F)
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PN109F
Abstract: PNZ109F
Text: Phototransistors PNZ109F PN109F Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting
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PNZ109F
PN109F)
PN109F
PNZ109F
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PN109F
Abstract: PNZ109F
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109F (PN109F) Silicon planar type Unit: mm φ4.6±0.15 Glass window M Di ain sc te on na tin nc ue e/ d 4.5±0.2 For optical control systems • Features 12.7 min. ue pl d in
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2002/95/EC)
PNZ109F
PN109F)
PN109F
PNZ109F
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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PT-103
Abstract: PH110 PT108A pt77 PH114 PH109 PN101 PN101F PT-101 PT-102
Text: - 288- I 1'J PT108A FH109 PH110 rn n ^ PH1161L PT8L PN101 PN101F PN102F PN102 PN106 PN107 PN108 PN107F PN108F PN10SCL PN109CL PN109F PN109L PN 110 PN111W PN115 PN116 PN120S PN121S PN123S PN126S PN127 PN147 £ tfc B & it & II min mA 'S 0.2 10 0.2 0.04 0.04
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PT108A
PT-101
PH109
PT-101
PH110
PT-70
PT-102
PH1161L)
PT-91
PT-92
PT-103
PH110
PT108A
pt77
PH114
PH109
PN101
PN101F
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Untitled
Abstract: No abstract text available
Text: Panasonic Phototransistors PN109F Silicon NPN Phototransistor Unit : mm For optical control systems • Features • F la t w in d o w design w hich is suited to optical system s • B u ilt-in filte r to c u to ff v isib le lig h t fo r re d u cin g am b ie n t lig h t noise
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PN109F
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phototransistor visible light
Abstract: PN109F
Text: Panasonic Phototransistors PN109F Silicon NPN Phototransistor For optical control systems • Features • Flat window design which is suited to optical systems • Built-in filter to cutoff visible light for reducing ambient light noise • Peak sensitivity wavelength matched with infrared light emitting
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PN109F
opr10-1
phototransistor visible light
PN109F
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transistor 30021
Abstract: PNA4602M
Text: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light
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PN3206
PN312D
PN322D
PN3112
PN3108
PNA3201F
PN3405
PN316K2
PN3116
PN3624K
transistor 30021
PNA4602M
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1k88
Abstract: PN3634 1R88 6N3P PNA4602M
Text: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206
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PN3104
PN3106
PN3206
PN312D
PFES04-1N
PFOS04-2N
PN322D
PN3105
PN3112
1k88
PN3634
1R88
6N3P
PNA4602M
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PN126S
Abstract: ON1503 PN7103
Text: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10
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PN312C
PN312E
PN3104
PN3106
PN3206
PN312D
PN322D
PN3105
PN3112
PN3108
PN126S
ON1503
PN7103
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PN7103
Abstract: pf204 mr03 C302 C5031 PNA4602M ON1501 PN334 PN106 PNA4602
Text: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. Flat (Clear) 2 division PF204-3 PN3104 Flat (Clear) PSD PN3106(N) tr.tf typ. (ns) typ 10 PF004-5 22 940 8 Flat (Clear) PSD
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PN101/102*
PN101F/102F*
ML02-1/
ML03-1
MF02-1/
PN312E
PF204-3
PN3104
PFU04-5
PN106*
PN7103
pf204
mr03
C302
C5031
PNA4602M
ON1501
PN334
PN106
PNA4602
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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