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    M5364 Price and Stock

    Eaton Bussmann 170M5364

    FUSE SQUARE 800A 700VAC RECT
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    DigiKey 170M5364 Bulk 3
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    Alpha Wire M5364-SL001

    CABLE 6COND 20AWG SHLD
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    Alpha Wire M5364-SL005

    CABLE 6COND 20AWG SLATE SHLD
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    DigiKey M5364-SL005 500
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    Alpha Wire M5364-SL199

    CABLE 6COND 20AWG SHLD 1000'
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    DigiKey M5364-SL199 1,000
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    Alpha Wire M5364-SL002

    CABLE 6COND 20AWG SLATE SHLD
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    DigiKey M5364-SL002 500
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    Onlinecomponents.com M5364-SL002
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    M5364 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M53640400CB0-C50 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V Original PDF
    M53640400CB0-C60 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V Original PDF
    M53640400CW0-C50 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V Original PDF
    M53640400CW0-C60 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V Original PDF
    M53640405BT0-C50 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53640405BT0-C60 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53640405BY0-C50 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53640405BY0-C60 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53640405CT0-C50 Samsung Electronics EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53640405CT0-C60 Samsung Electronics EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53640405CY0-C50 Samsung Electronics EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53640405CY0-C60 Samsung Electronics EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53640410CB0-C50 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V Original PDF
    M53640410CB0-C60 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V Original PDF
    M53640410CW0-C50 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V Original PDF
    M53640410CW0-C60 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V Original PDF
    M53640412CB0-C50 Samsung Electronics Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V Original PDF
    M53640412CB0-C60 Samsung Electronics Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V Original PDF
    M53640412CW0-C50 Samsung Electronics Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V Original PDF
    M53640800CB0-C50 Samsung Electronics 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF

    M5364 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE


    Original     		PDF M53640805CY0/CT0-C 8Mx36 4Mx16 M53640805CY0/CT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53640805BY0/BT0-C 8Mx36 4Mx16 M53640805BY0/BT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53640400DW0/DB0 M53640410DW0/DB0 DRAM MODULE M53640400DW0/DB0 & M53640410DW0/DB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0D is a 4Mx36bits Dynamic RAM


    Original     		PDF M53640400DW0/DB0 M53640410DW0/DB0 M53640400DW0/DB0 M53640410DW0/DB0 M5364040 4Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640405CY0/CT0-C DRAM MODULE


    Original     		PDF M53640405CY0/CT0-C 4Mx36 4Mx16 M53640405CY0/CT0-C 4Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: M53640400CW0/CB0 M53640410CW0/CB0 DRAM MODULE M53640400CW0/CB0 & M53640410CW0/CB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5364040(1)0C


    Original     		PDF M53640400CW0/CB0 M53640410CW0/CB0 M53640410CW0/CB0 M5364040 4Mx36bits 24-pin 28-pin 72-pin

    64mb edo dram simm

    Abstract: K4E160411C
    Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C


    Original     		PDF M53640412CW0/CB0 M53640412CW0/CB0 M53640412C 4Mx36bits M53640412C 24-pin 28-pin 72-pin M53640412CW0 64mb edo dram simm K4E160411C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D


    Original     		PDF M53640800DW0/DB0 M53640810DW0/DB0 M53640800DW0/DB0 M53640810DW0/DB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C


    Original     		PDF M53640812CW0/CB0 M53640812CW0/CB0 M53640812C 8Mx36bits M53640812C 24-pin 28-pin 72-pin M53640812CW0

    capacitor taa

    Abstract: No abstract text available
    Text: DRAM MODULE M53640405BY0/BT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640405BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53640405BY0/BT0-C 4Mx36 4Mx16 M53640405BY0/BT0-C 4Mx36bits capacitor taa

    Untitled

    Abstract: No abstract text available
    Text: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M5364 Construction Diameters (In) 1) Component 1 6 X 1 COND a) Conductor 20 (7/28) AWG TC 0.038 b) Insulation 0.016" Wall, Nom. PVC


    Original     		PDF M5364

    Untitled

    Abstract: No abstract text available
    Text: M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D


    Original     		PDF M53640800DW0/DB0 M53640810DW0/DB0 M53640810DW0/DB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin

    DQ9-DQ12

    Abstract: No abstract text available
    Text: M53640800CW0/CB0 M53640810CW0/CB0 DRAM MODULE M53640800CW0/CB0 & M53640810CW0/CB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0C


    Original     		PDF M53640800CW0/CB0 M53640810CW0/CB0 M53640810CW0/CB0 M5364080 8Mx36bits 24-pin 28-pin 72-pin DQ9-DQ12

    coaxial cable awm 1354

    Abstract: AWM 2498 M39024/11
    Text: Manhattan Electrical Cable Alpha Wire | www.alphawire.com | 1-800-52 ALPHA Specifications subject to change. For complete specifications and availability, visit www.alphawire.com. 141 Manhattan™ Electrical Cable Signal transmission made reliable A lpha Wire’s Manhattan


    Original     		PDF High13/2024 coaxial cable awm 1354 AWM 2498 M39024/11

    pico electronics transformers h5460

    Abstract: M-531 M-5359 J5600 E5140 M-5355 H-5415 J-5650 e5200 M5300
    Text: P IC O ’S Ultra-Miniature PULSE Transformers .n i!* # » no "/« MAX ” OIA MSERIES rB fO _ . 2 5 0 t 010 025 Plug-In 3 5 MAX DIA 14.9 MAX OlA) 16 .3 5 t r* 7/ M MAX 5.55 M AX)£ 035* (0 91 00 i.* 5 .2 5,4 «6.351 i '/ j iV * (38.1 + 6 .3 5 ) , I.so i t s


    OCR Scan     		PDF MIL-PRF-21038 100KHZ-17MHZ KHz-10 E-5183 E-5184 E-5185 E-5186 E-5187 E-5188 E-5189 pico electronics transformers h5460 M-531 M-5359 J5600 E5140 M-5355 H-5415 J-5650 e5200 M5300

    KM416C4104AS

    Abstract: KM416C4104a KM44C4005BS
    Text: Preliminary M5364005ASW/ASWG DRAM MODULE M5364005ASW/ASWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364005A is a 4Mx36bits Dynamic RAM - Part Identification high density memory module. The Samsung M5364005A


    OCR Scan     		PDF KMM5364005ASW/ASWG KMM5364005ASW/ASWG 4Mx16 KMM5364005A 4Mx36bits 4Mx16bits 72-pin KMM5364005ASW KM416C4104AS KM416C4104a KM44C4005BS

    Untitled

    Abstract: No abstract text available
    Text: M5364003BK/BKG DRAM M5364103BK/BKG M5364003BK/BKG & M5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG G EN ER AL DESC RIPTIO N The Samsung M53640 1 03BK is a 4M bit x 36


    OCR Scan     		PDF KMM5364003BK/BKG KMM5364103BK/BKG KMM5364103AK/AKG 4Mx36 300mil KMM53640 24-pin 28-pin

    Untitled

    Abstract: No abstract text available
    Text: M5364000H/HG DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAC M5364000H-6 60ns 15ns M5364000H-7 70ns 2 0 ns 130ns M5364000H-8 80ns 2 0 ns 150ns The Samsung M5364000H is a 4M bits x 36 Dynam­


    OCR Scan     		PDF KMM5364000H/HG KMM5364000H-6 KMM5364000H-7 KMM5364000H-8 130ns 150ns KMM5364000H 24-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES M5364100H/HG 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tcAC tRC 15ns 110ns M5364100H-7 70ns 20ns 130ns M5364100H-8 80ns 20ns 150ns The M5364100H is a S ingle In-line M em ory M odule w ith edge connections and is intended fo r m ounting into


    OCR Scan     		PDF KMM5364100H/HG KMM5364100H-6 KMM5364100H-7 KMM5364100H-8 110ns 130ns 150ns KMM5364100H

    Untitled

    Abstract: No abstract text available
    Text: M5364005BK/BKG M5364105BK/BKG DRAM MODULE M5364005BK/BKG & M5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M 53640 1 05BK is a 4M bit x 36 • Part Identification


    OCR Scan     		PDF KMM5364005BK/BKG KMM5364105BK/BKG KMM5364105BK/BKG 4Mx36 KMM5364005BK cycles/64ms KMM53640 KMM5364005BKG

    A1KA

    Abstract: KMM5364103BK
    Text: M5364003BK/BKG M5364103BK/BKG DRAM MODULE M5364003BK/BKG & M5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG GENERAL DESCRIPTION FEATURES The Sam sung K M M 53640 1 03BK is a 4M bit x 36 • Part Identification


    OCR Scan     		PDF KMM5364003BK/BKG KMM5364103BK/BKG KMM5364003BK/BKG KMM5364103AK/AKG 4Mx36 300mil 24-pin 28-pin 72-pin KMM53640 A1KA KMM5364103BK

    M5916

    Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
    Text: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5


    OCR Scan     		PDF 11Mx9 KMM581000C KMM584Q0 KMM594000C-5 HKMM58100 KMM591000CN-7 M584Q00C-6 jKMM59400QC-6 KMM533100 KMM5361000C2/C2G M5916 533410 M5402 KMM591000CN-7 KMM5334100

    KMM5334100

    Abstract: LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm
    Text: TABLE OF CONTENTS I .F UNC TI ON GUIDE 1. 2. Product G uide. 13


    OCR Scan     		PDF KMM581000CN-6/7/8 KMM591000CN-6/7/8 KMM5362203AW/WG-6/7/8 KMM5362209AU/AUG-6/7/8. KMM5334100 LM 8227 KMM591000CN-6 LM 8251 m53641 KMM5368103A y 4m 1/Detector/"Detector IC"/"CD"/4Mx8 dram simm

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E j> m Tibmns M5364000B/BG o d i s i ö s sb4 • s m g k DRAM MODULES 4 M x 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tR A C tC A C t f lC M5364000B-6 60ns 15ns


    OCR Scan     		PDF KMM5364000B/BG KMM5364000B-6 110ns KMM5364000B-7 130ns KMM5364000B-8 150ns cycles/16ms KMM5364000B bitsx36

    M5330

    Abstract: A5161
    Text: PICO ’S Ultra-Miniature PU LSE Transformers SPECIFICATIONS e ML-TO31O30: • OPERATING TEMPERATURE: All unit* manufactured 1o MIL T 21036 -S5°C to +130°C FEATURES e EXTREM E RESISTANCE TO THERMAL SHOCK e ULTRA MINIATURE SIZE # BUILT TO MIL T-21036 e TERMINALS:


    OCR Scan     		PDF ML-TO31O30: T-21036 MIL-STD-202 IL-STD-202, M-5362 M-5364 M5330 A5161