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    M624256 Search Results

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    M624256 Price and Stock

    Hitachi Ltd HM624256ALJP-20

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    Bristol Electronics HM624256ALJP-20 500
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    Hitachi Ltd HM624256AJP-25T

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    Bristol Electronics HM624256AJP-25T 240 1
    • 1 $13.2
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    • 100 $12.1836
    • 1000 $11.1698
    • 10000 $11.1698
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    Hitachi Ltd HM624256AJP-25

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    Bristol Electronics HM624256AJP-25 190
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    Hitachi Ltd HM624256ALP-20

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    Bristol Electronics HM624256ALP-20 29
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    Hitachi Ltd HM624256AJP-20R

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    Bristol Electronics HM624256AJP-20R 25
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    M624256 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M624256-15E1 STMicroelectronics VERY FAST CMOS 1 Megabit (256K x 4) SRAM WITH OUTPUT ENABLE Scan PDF
    M624256-20E1 STMicroelectronics VERY FAST CMOS 1 Megabit (256K x 4) SRAM WITH OUTPUT ENABLE Scan PDF

    M624256 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SOJ28

    Abstract: No abstract text available
    Text: M624256 1 Megabit 256K x 4 VERY FAST SRAM WITH OUTPUT ENABLE 256K x 4 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 28 1 SOJ28 (E) 400 mils DESCRIPTION


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    M624256 SOJ28 M624256 SOJ28 PDF

    Untitled

    Abstract: No abstract text available
    Text: M624256 1 Megabit 256K x 4 VERY FAST SRAM WITH OUTPUT ENABLE DATA BRIEFING 256K x 4 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 28 1 SOJ28 (E)


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    M624256 SOJ28 M624256 A0-A17 AI00811 SOJ28 PDF

    TOP SIDE MARKING M27C512

    Abstract: No abstract text available
    Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


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    M27C512 SGS-THOMSON

    Abstract: M2201 ST93C46
    Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


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    Untitled

    Abstract: No abstract text available
    Text: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


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    misplaced Wire Bonds

    Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
    Text: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


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    PDF

    256k x8 SRAM 5V

    Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
    Text: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)


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    M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 256k x8 SRAM 5V ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09 PDF

    Untitled

    Abstract: No abstract text available
    Text: C T S G S -T H O M S O N ^ 7 # . HDigœilLIgTOOIfSlDgi M624256 1 Megabit 256K x 4 VERY FAST SRAM WITH OUTPUT ENABLE • 256Kx 4 VERY FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIM ES: 15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O


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    M624256 256Kx M624256 PDF

    A10C

    Abstract: SOJ28 400mils
    Text: C T *J M » S G S -T H O M S O N » » I W ! » M624256 ! « VERY FAST CMOS 1 Megabit 256K x 4 SRAM WITH OUTPUT ENABLE PRELIMINARY DATA • 256Kx 4 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 15,20ns - LOWVcc DATA RETENTION: 2V


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    M624256 256Kx SOJ28 M624256 SOJ28 A10C 400mils PDF

    Untitled

    Abstract: No abstract text available
    Text: f= 7 SCS-THOMSON ^ 7 # [lD ^ Q [|[L[l©¥^®R!]D(gi M624256 VERY FAST CMOS 1 Megabit (256K x 4) SRAM WITH OUTPUT ENABLE • 256K x 4 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17, 20, 25ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O


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    M624256 M624256 PSOJ28 PDF

    Untitled

    Abstract: No abstract text available
    Text: C T * 7 # . S G S -T H O M S O N IM D » llL lM W M624256 lllg i VERY FAST CMOS 1 Megabit 256K x 4 SRAM WITH OUTPUT ENABLE PRELIMINARY DATA • 256Kx 4 CMOS FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 15,20ns - LOW Vcc DATA RETENTION: 2V


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    M624256 256Kx SOJ28 M624256 SOJ28 PDF

    Untitled

    Abstract: No abstract text available
    Text: f= 7 SGS-THOMSON ^ 7 # M624256 H D g ^ ( ô iL i( g T r ® ( Q ) iQ ( g i VERY FAST CMOS 1 Megabit (256K x 4) SRAM WITH OUTPUT ENABLE • 256K x 4 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES: 15, 17,20, 25ns ■ LOW Vcc DATA RETENTION: 2V


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    M624256 M624256 PSOJ28 PDF

    624256

    Abstract: 1SAM
    Text: n = 7 SGS-THOMSON * 7 #« * œ a J » ô M ( g § M624256 VERY FAST CMOS 1 Megabit (256K x 4 SRAM WITH OUTPUT ENABLE ADVANCE DATA • 256K x 4 CMOS FAST SRAM ENABLE with OUTPUT ■ EQUAL CYCLE and ACCESS TIMES: 15, 17, 20, 25ns ■ LOW V cc DATA RETENTION: 2V


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    M624256 M624256 SOJ28 624256 1SAM PDF

    Untitled

    Abstract: No abstract text available
    Text: r=7 SGS-THOMSON 73 MtiMMILitglMDiiilgi * M624256 * 1 Megabit 256K x 4 VERY FAST SRAM WITH OUTPUT ENABLE • 256Kx 4 VERY FAST SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 15,20ns ■ LOW Vcc DATA RETENTION: 2V ■ TRI-STATE COMMON I/O ■ JEDEC PLASTIC SOJ, 400 mil PACKAGE


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    M624256 256Kx M624256 7T2T237 SOJ28 SOJ28 007T33b PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    rca thyristor manual

    Abstract: HN623258 101490
    Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j


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    PDF

    256x16 eprom

    Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
    Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1


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    ET9400 EF6801/04/05 ISB12000 ISB18000 MKI48Z18 PHDIP28 MK48Z30, 256x16 eprom GS-2I5-D12 GS-D250M GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B PDF

    MK45H14

    Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
    Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .


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    M27C64A M27C256B M87C257 M27C512 M27V512 M27C1001 M27V101 M27C1024 M27C2001 M27V201 MK45H14 AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA PDF

    Untitled

    Abstract: No abstract text available
    Text: M624256A Series 262144-word x 4-bit High Speed CMOS Static RAM HITACHI Description The Hitachi M624256A is a high speed 1M Static RAM organized as 262,144-word x 4-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology and high


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    HM624256A 262144-word 144-word 32-bit HM624256A, 400-mil 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: S5 E D Æ 7 • Traisa? 0030154 ^ 0 4 » s g t h T - H ù - 2 3 -lO S C S -T H O M S O N M D » I[L [IO T G M M 6 2 4 2 5 6 VERY FAST CMOS 1 Megabit 256K x 4 SRAM WITH OUTPUT ENABLE S G S- TH 0 nS 0 N ~ ■ 256K x 4 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES:


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    M624256 M624256 PSOJ28 PDF

    MK48T87B24

    Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
    Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W


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    M27C64A-15F1 M27C64A-20F1 M27C64A-25F1 M27C64A-30F1 M27C64A-20F6 M27C64A-25F6 M27C64A-30F6 ST16601 ST16F48 ST16SF48 MK48T87B24 ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR PDF