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    m48z32y

    Abstract: No abstract text available
    Text: M48Z32Y-100PC1 IL122 * C-MOS 256K 32K 8 -BIT STATIC RAM WITH BATTERY —TOP VIEW— IN 1 A12 IN 2 27 W A7 IN 3 26 A13 A6 IN 4 25 A8 IN A5 IN 5 24 A9 IN A4 IN 6 23 A11 A3 IN 7 22 G A2 IN 8 21 A10 IN IN IN IN A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3


    Original     		PDF M48Z32Y-100PC1 IL122 A0-A14 m48z32y

    m48z32y

    Abstract: No abstract text available
    Text: M48Z32 M48Z32Y CMOS 32K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME 10 YEARS of DATA RETENTION in the ABSENCE of POWER at 70 °C PIN and FUNCTION COMPATIBLE with


    Original     		PDF M48Z32 M48Z32Y M48Z32: M48Z32Y: PCDIP28 M48Z32/32Y 600mil M48Z32Y

    TSOP40 Flash

    Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
    Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A

    asm eagle

    Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
    Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:


    Original     		PDF BRMEMSEL/0997 asm eagle M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860

    M48TO8

    Abstract: M48TO2-XXXPCZ M48Z32Y Lithium Battery Protection Circuit for Battery P M48T86 E89556 M48T59W-XXXMHZ M48T37W M48Tl2-XXXPCZ M48ZO8
    Text: File E89356 Vol. 1 Sec. 3 and Report Page 1 Issued: 07-09-93 Revised: 01-27-99 D E S C R I P T I 0 N PRODUCT COVERED: * Component - Integrated Circuits with lithium battery reverse charge protection, Models MK4lT56N, I4lT56S, M40CXXXS, M4OZlllWMHZ, M48TlOlW-XXXMHZ, M48T201W-XXXMHZ, M48T201V-XXXMHZ where X is


    Original     		PDF E89356 MK4lT56N, I4lT56S, M40CXXXS, M48TlOlW-XXXMHZ, M48T201W-XXXMHZ, M48T201V-XXXMHZ M4T28XXYYSHZ, M4T32-XXYYSHZ, M4Z28-XXYYSHZ, M48TO8 M48TO2-XXXPCZ M48Z32Y Lithium Battery Protection Circuit for Battery P M48T86 E89556 M48T59W-XXXMHZ M48T37W M48Tl2-XXXPCZ M48ZO8

    M48Z32Y-100PC1

    Abstract: m48z32y M48T08-150PC1 PCDIP28 M48Z32-85PC1 m48t12-150 m48t08-150 MK41T56N00 M48T02-120PC1 105v
    Text: MEMORIES and SMARTCARD PRODUCTS STATIC RAMS ZEROPOWER SRAM Organis. Speed ns VCC Range Feature Temperature Range (°C) Package M48Z02-120PC1 x8 120 5V + 10/-5% 10 Year Battery Life 0 to 70 PCDIP24 M48Z02-150PC1 x8 150 5V + 10/-5% 10 Year Battery Life 0 to 70


    Original     		PDF M48Z02-120PC1 M48Z02-150PC1 M48Z12-150PC1 M48Z02-150PC6 M48Z12-150PC6 M48Z02-200PC1 M48Z12-200PC1 M48Z02-200PC6 M48Z12-200PC6 M48Z58-70PC1 M48Z32Y-100PC1 m48z32y M48T08-150PC1 PCDIP28 M48Z32-85PC1 m48t12-150 m48t08-150 MK41T56N00 M48T02-120PC1 105v

    PJ 1179

    Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
    Text: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a


    Original     		PDF

    m48z32y

    Abstract: Xq 949 M48Z32
    Text: ÆTSG S-TH O M SO N ^ 7 # M48Z32 M48Z32Y M g K ( Q iL i( M ( ô M ( g S CMOS 32K x 8 ZEROPOWER SRAM • INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ UNLIMITED WRITE CYCLES « READ CYCLE TIME EQUALS WRITE CYCLE TIME ■ 10 YEARS of DATA RETENTION in the


    OCR Scan     		PDF M48Z32 M48Z32Y M48Z32: M48Z32Y: PCDIP28 M48Z32/32Y, r------------------948 100ns m48z32y Xq 949

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    dallas ds80c320 high speed micro guide

    Abstract: DS1640
    Text: 'w - l J J t f °0 _72 , TABLE OF CONTENTS Short-Form Catalog T im e k e e p in g .1 M em ory P rodu cts .


    OCR Scan     		PDF

    nv SRAM cross reference

    Abstract: Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM
    Text: Memory Products The centerpiece of the Memory Products family is our broad portfolio of Nonvolatile SRAM modules. Built using low-power SRAM, nonvolatile memory controllers and lithium batteries, these modules offer nonvolatile storage that can be read and written


    OCR Scan     		PDF DS1258AB-XXX DS1258Y-XXX DS1220AB-XXX 1220AB-XXX-IND DS1220AD-XXX DS1220AD-XXX-IND DS1225AB-XXX DS1225AD-XXX 1225AD-XXX-IND nv SRAM cross reference Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM

    stopwatch using 8051 microcontroller

    Abstract: 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288
    Text: SHORT tMWì DALLAS SEMICONDUCTOR APRIL 1996 http://www.dalsemi.com For the latest information about every product we make, visit our World Wide Web site. You’ll find the most complete, up-to-date information about our products available seven days a week, 24 hours a day. H ere’s just some o f what you’ll find:


    OCR Scan     		PDF 150-mil S2105 S2105 stopwatch using 8051 microcontroller 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288

    MK45H14

    Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
    Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .


    OCR Scan     		PDF M27C64A M27C256B M87C257 M27C512 M27V512 M27C1001 M27V101 M27C1024 M27C2001 M27V201 MK45H14 AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA

    MK48T87B24

    Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
    Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W


    OCR Scan     		PDF M27C64A-15F1 M27C64A-20F1 M27C64A-25F1 M27C64A-30F1 M27C64A-20F6 M27C64A-25F6 M27C64A-30F6 ST16601 ST16F48 ST16SF48 MK48T87B24 ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR