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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU Bipolar Mem ories • M B 7151E /H , M B 7152E /H /Y Schottky TTL 16,384-Bit Bipolar Programmable Read-Only Memory D escription The Fujitsu MB7151 and M87152 are high speed Schottky TTL electrically field program mable read only m emories organized as


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    7151E 7152E 384-Bit MB7151 M87152 MB7152, MB7151E/H B7152E/H/Y IP-20P PDF

    M87152

    Abstract: mb7152y
    Text: F U J IT S U Bipolar Memories • MB7151E/H, MB7152E/H/Y Schottky TTL 16,384-Bit Bipolar Programmable Read-Only Memory D e s c r ip t i o n The Fujitsu MB7151 and M87152 are high speed Schottky TTL electrically field programmable read only memories organized as


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    MB7151E/H, MB7152E/H/Y 384-Bit MB7151 M87152 MB7152, MB71S1E/H 20-Pln mb7152y PDF

    10A fast Gate Turn-off Thyristor

    Abstract: M2739 M2778 Mullard Thyristor thyristor equivalent IEC134 V125 gt250 Mullard Diode 1000R
    Text: DEVELOPMENT DATA BTW162DV SERIES This data sheet contains advance information and specifications are subject to change without notice. FAST TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODES Asymmetrical fast turn-off thyristors ASCR with anti-parallel-c:onnected fast, soft-recovery diodes


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    BTW162DV BTW162IDV- 1000r m2778 M87-1523/RST 10A fast Gate Turn-off Thyristor M2739 M2778 Mullard Thyristor thyristor equivalent IEC134 V125 gt250 Mullard Diode 1000R PDF

    BTV159

    Abstract: Gate Turn-Off Thyristors BTV159V 1000R M1445 IEC134 1200R GT/25p 1200r
    Text: DEVELOPMENT DATA BTV159V SERIES T h is d a ta she et c o n ta in s a d v an ce in fo r m a tio n and J V_ s p e c ific a tio n s are su b je c t t o c h a n g e w it h o u t n o tic e . FAST GATE TURN-OFF THYRISTORS T h y risto rs in IS O T O P envelopes w ith e le ctrica lly isolated metal baseplates capable o f being turned


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    BTV159V BTV159Vâ 1000R 1200R M1444 M87-1520/RC BTV159 Gate Turn-Off Thyristors M1445 IEC134 1200R GT/25p 1200r PDF

    diode gfm

    Abstract: GTO thyristor Gate Turn-Off Thyristors gto 10A M1439 IEC134 gto 20A GTO switching test GTO switching circuit M227S
    Text: DEVELOPMENT DATA BTV159DV SERIES T h is d a ta she et c o n ta in s a d v a n c e in fo r m a tio n a n d s p e c ific a tio n s are s u b je c t t o c h a n g e w it h o u t n o tic e . FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE Fast gate tu rn -o ff th y risto rs w ith anti-parallel-connected fast soft-recovery diodes in IS O TO P. T hey


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    BTV159DV BTV159DVâ 1000R 1200R M227S M87-1521/RC diode gfm GTO thyristor Gate Turn-Off Thyristors gto 10A M1439 IEC134 gto 20A GTO switching test GTO switching circuit M227S PDF