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Abstract: No abstract text available
Text: FU JITSU Bipolar Mem ories • M B 7151E /H , M B 7152E /H /Y Schottky TTL 16,384-Bit Bipolar Programmable Read-Only Memory D escription The Fujitsu MB7151 and M87152 are high speed Schottky TTL electrically field program mable read only m emories organized as
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7151E
7152E
384-Bit
MB7151
M87152
MB7152,
MB7151E/H
B7152E/H/Y
IP-20P
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M87152
Abstract: mb7152y
Text: F U J IT S U Bipolar Memories • MB7151E/H, MB7152E/H/Y Schottky TTL 16,384-Bit Bipolar Programmable Read-Only Memory D e s c r ip t i o n The Fujitsu MB7151 and M87152 are high speed Schottky TTL electrically field programmable read only memories organized as
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MB7151E/H,
MB7152E/H/Y
384-Bit
MB7151
M87152
MB7152,
MB71S1E/H
20-Pln
mb7152y
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10A fast Gate Turn-off Thyristor
Abstract: M2739 M2778 Mullard Thyristor thyristor equivalent IEC134 V125 gt250 Mullard Diode 1000R
Text: DEVELOPMENT DATA BTW162DV SERIES This data sheet contains advance information and specifications are subject to change without notice. FAST TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODES Asymmetrical fast turn-off thyristors ASCR with anti-parallel-c:onnected fast, soft-recovery diodes
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BTW162DV
BTW162IDV-
1000r
m2778
M87-1523/RST
10A fast Gate Turn-off Thyristor
M2739
M2778
Mullard Thyristor
thyristor equivalent
IEC134
V125
gt250
Mullard Diode
1000R
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BTV159
Abstract: Gate Turn-Off Thyristors BTV159V 1000R M1445 IEC134 1200R GT/25p 1200r
Text: DEVELOPMENT DATA BTV159V SERIES T h is d a ta she et c o n ta in s a d v an ce in fo r m a tio n and J V_ s p e c ific a tio n s are su b je c t t o c h a n g e w it h o u t n o tic e . FAST GATE TURN-OFF THYRISTORS T h y risto rs in IS O T O P envelopes w ith e le ctrica lly isolated metal baseplates capable o f being turned
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BTV159V
BTV159Vâ
1000R
1200R
M1444
M87-1520/RC
BTV159
Gate Turn-Off Thyristors
M1445
IEC134
1200R
GT/25p 1200r
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diode gfm
Abstract: GTO thyristor Gate Turn-Off Thyristors gto 10A M1439 IEC134 gto 20A GTO switching test GTO switching circuit M227S
Text: DEVELOPMENT DATA BTV159DV SERIES T h is d a ta she et c o n ta in s a d v a n c e in fo r m a tio n a n d s p e c ific a tio n s are s u b je c t t o c h a n g e w it h o u t n o tic e . FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE Fast gate tu rn -o ff th y risto rs w ith anti-parallel-connected fast soft-recovery diodes in IS O TO P. T hey
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BTV159DV
BTV159DVâ
1000R
1200R
M227S
M87-1521/RC
diode gfm
GTO thyristor
Gate Turn-Off Thyristors
gto 10A
M1439
IEC134
gto 20A
GTO switching test
GTO switching circuit
M227S
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