Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1 A rectification is possible • VR = 30 V is guaranteed • Automatic insertion with the emboss taping is possible
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MA2Q735
MA735)
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MA2Q735
Abstract: MA735
Text: Schottky Barrier Diodes SBD MA2Q735 (MA735) Silicon epitaxial planar type Unit : mm For switching circuits 4.4 ± 0.3 0 to 0.05 • Features 2 + 0.1 Symbol Rating Unit Reverse voltage (DC) 2.15 ± 0.3 Parameter 1 0.25 − 0.05 ■ Absolute Maximum Ratings Ta = 25°C
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MA2Q735
MA735)
MA2Q735
MA735
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sine wave generator
Abstract: diode 104 MA2Q735 MA735
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ M Di ain sc te on na tin nc ue e/ d 4.4±0.3
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2002/95/EC)
MA2Q735
MA735)
sine wave generator
diode 104
MA2Q735
MA735
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 M Di ain sc te on na tin nc ue e/
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2002/95/EC)
MA2Q735
MA735)
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MA2Q735
Abstract: MA735
Text: Schottky Barrier Diodes SBD MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1 A rectification is possible • VR = 30 V is guaranteed • Automatic insertion with the emboss taping is possible
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MA2Q735
MA735)
MA2Q735
MA735
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MA2Q735
Abstract: MA735
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ M Di ain sc te on na tin nc ue e/ d 4.4±0.3
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2002/95/EC)
MA2Q735
MA735)
MA2Q735
MA735
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 • Forward current (Average) IF(AV) = 1 A rectification is possible
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2002/95/EC)
MA2Q735
MA735)
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MA2Q735
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2Q735 Silicon epitaxial planar type Unit : mm For switching circuits 4.4 ± 0.3 0 to 0.05 • Features 2 + 0.1 Symbol Rating Unit Reverse voltage (DC) 2.15 ± 0.3 Parameter 1 0.25 − 0.05 ■ Absolute Maximum Ratings Ta = 25°C
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MA2Q735
MA2Q735
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 • Forward current (Average) IF(AV) = 1 A rectification is possible • Reverse voltage VR = 30 V is guaranteed
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MA2Q735
MA735)
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MA2Q735
Abstract: MA735
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q735 (MA735) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 M Di ain sc te on na tin nc ue e/ d 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ ue pl d in
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2002/95/EC)
MA2Q735
MA735)
MA2Q735
MA735
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SI3016
Abstract: No abstract text available
Text: TMS320C54CST Client Side Telephony DSP Data Manual www.spiritDSP.com/CST Literature Number: SPRS187B November 2001 − Revised September 2003 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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TMS320C54CST
SPRS187B
SI3016
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SI3016
Abstract: No abstract text available
Text: TMS320C54CST Client Side Telephony DSP Data Manual www.spiritDSP.com/CST Literature Number: SPRS187B November 2001 − Revised September 2003 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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TMS320C54CST
SPRS187B
TMDS324L551-09
TMDSDSK5416
TMS320C54x
TMS320C55x
TMS320C5000
SPRC099
SPRC133
SI3016
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Si3016
Abstract: diode sod-123 marking code l8 TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE
Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,
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TMS320C54V90
SPRS165F
32bis,
22bis,
27ter
42bis
Si3016
diode sod-123 marking code l8
TMS320C54V90
TMS320C54V90BGGU
TMS320C54V90BPGE
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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BGA PACKAGE thermal resistance
Abstract: sod-123 marking code DV B7 J4 marking code sot 223 SI3016
Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,
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TMS320C54V90
SPRS165F
32bis,
22bis,
27ter
42bis
BGA PACKAGE thermal resistance
sod-123 marking code DV B7
J4 marking code sot 223
SI3016
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MA7D52
Abstract: No abstract text available
Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)
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MA2C700
MA2C700A
MA2C719
MA2C723
MA2D749
MA2D749A
MA2D750
MA2D755
MA2D760
MA2H735
MA7D52
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Untitled
Abstract: No abstract text available
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diode series are ideal for use in the power sopplies of computers and portable equipment. With package configurations that range from Mini Type:2-pin to New Mini Power Type:2-pin packages, these diodes
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OD-123)
OD-106)
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sot-89 marking E5
Abstract: Z X C SOT-89-5 matsua tantalum capacitor Schottky Diode SOT-89 E5 sot89 marking 81 SOT89 marking 1x sot-89-5 MA2Q735 XC6373 XC6373A300PR
Text: Series Low Frequency PWM Controlled, Step-Up DC/DC Converters ◆CMOS Low Power Consumption •Applications ◆Operating Voltage : 0.9V~10.0V ●Cellular phones, pagers ◆Output Voltage Range : 2.0V~7.0V ●Palmtops ●Cameras, video recorders ◆Output Voltage Accuracy : ±2.5%
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30kHz
XC6373
L100H,
CL47F
XC6373A300PR
sot-89 marking E5
Z X C SOT-89-5
matsua tantalum capacitor
Schottky Diode SOT-89
E5 sot89
marking 81 SOT89
marking 1x sot-89-5
MA2Q735
XC6373A300PR
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XC6372A301PR
Abstract: No abstract text available
Text: XC6371/XC6372 シリーズ JTR0402-005a PWMPWM/PFM 自動切替昇圧 DC/DC コンバータ ☆GreenOperation 対応 •概要 を内蔵
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XC6371/XC6372
JTR0402-005a
XC6371ã
XC6372ã
50kHzã
100kHzã
180kHzï
XC6372A301PR
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Untitled
Abstract: No abstract text available
Text: XC6371/6372/6373 シリーズ JTR0402-001 PWMPWM/PFM 自動切替昇圧 DC/DC コンバータ ☆GO 対応 •概要 Ωスイッチング
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XC6371/6372/6373
JTR0402-001
XC6371ã
XC6372ã
XC6373ã
50kHzã
100kHzã
180kHzï
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Untitled
Abstract: No abstract text available
Text: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.
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IXD2110/IXD2111
IXD2110/111B,
IXD2110/111
IXD2111
IXD211x
IXD2110
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Si3016
Abstract: DQ1 relay dec BLM21B102S H8 SOT-23 bav99 TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE n5 s101 transistor Schottky Diode 5V 6A atx 203 relay
Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,
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TMS320C54V90
SPRS165F
32bis,
22bis,
27ter
42bis
Si3016
DQ1 relay dec
BLM21B102S
H8 SOT-23 bav99
TMS320C54V90
TMS320C54V90BGGU
TMS320C54V90BPGE
n5 s101 transistor
Schottky Diode 5V 6A
atx 203 relay
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10MC25
Abstract: SI3016
Text: TMS320C54CST Client Side Telephony DSP Data Manual www.spiritDSP.com/CST Literature Number: SPRS187C November 2001 − Revised October 2008 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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TMS320C54CST
SPRS187C
SPRS187B
10MC25
SI3016
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Si3016
Abstract: BCP56T1 BLM21B102S TMS320C54V90 TMS320C54V90BGGU TMS320C54V90BPGE TOP MARKING C1 ROHM sot23-4 marking a1
Text: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D D D D D D D D D D D D D D D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23,
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TMS320C54V90
SPRS165F
32bis,
22bis,
27ter
42bis
Si3016
BCP56T1
BLM21B102S
TMS320C54V90
TMS320C54V90BGGU
TMS320C54V90BPGE
TOP MARKING C1 ROHM
sot23-4 marking a1
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