Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MA2H735 Search Results

    MA2H735 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA2H735 Panasonic Diode Original PDF
    MA2H735 Panasonic Silicon epitaxial planar type Original PDF
    MA2H735 Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF

    MA2H735 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • Forward current (Average) IF(AV) = 1 A rectification is possible • Low forward voltage: VF < 0.50 V


    Original     		PDF MA2H735

    MA2H735

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition • Low VF (forward voltage) type: VF > 0.5 V（at IF = 1 A）


    Original     		PDF MA2H735 MA2H735

    MA2H735

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 M Di ain sc te on na tin nc ue e/ d 2 0.9±0.2 Unit: mm For high frequency rectification 8° ue pl d in an c


    Original     		PDF 2002/95/EC) MA2H735 MA2H735

    MA2H735

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • Forward current (Average) IF(AV) = 1 A rectification is possible


    Original     		PDF 2002/95/EC) MA2H735 MA2H735

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 3.8±0.2 8° M Di ain sc te on na tin nc ue e/ d 3.2±0.1


    Original     		PDF 2002/95/EC) MA2H735 N-50BU)

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • IF(AV) = 1 A rectification is possible • Low forward voltage: VF < 0.50 V (at IF = 1 A)


    Original     		PDF MA2H735 PG-10N) SAS-8130)

    MA2H735

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planar type 1.9±0.1 1.85±0.2 2 0.9±0.2 Unit: mm For high frequency rectification 8° 0.9±0.2 3.2±0.1 • IF(AV) = 1 A rectification is possible • Low forward voltage: VF < 0.50 V (at IF = 1 A)


    Original     		PDF MA2H735 MA2H735

    MA2H735

    Abstract: mini-power package
    Text: Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition • Low VF (forward voltage) type: VF > 0.5 V（at IF = 1 A）


    Original     		PDF MA2H735 SAS-8130) MA2H735 mini-power package

    Untitled

    Abstract: No abstract text available
    Text: MA111 Schottky Barrier Diodes SBD MA2H735 Silicon epitaxial planer type Unit : mm For high-frequency rectification 3.2±0.1 0 to 0.05 Small and thin half new mini-power package ● IF(AV)=1A rectification possible 2 1 1.85±0.2 Low VF (forward voltage) type : VF < 0.5V(at IF=1A)


    Original     		PDF MA111 MA2H735 N-50BU PG-10N SAS-8130 100mA

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    MA7D52

    Abstract: No abstract text available
    Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)


    Original     		PDF MA2C700 MA2C700A MA2C719 MA2C723 MA2D749 MA2D749A MA2D750 MA2D755 MA2D760 MA2H735 MA7D52

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    MA716

    Abstract: MA7D50 ma741 MA10799
    Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742


    Original     		PDF MA10700) MA10701) MA10702) MA10703) MA10704) MA10705) MA10798) MA10799) MA4S713) MA6S718) MA716 MA7D50 ma741 MA10799

    Untitled

    Abstract: No abstract text available
    Text: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3


    Original     		PDF MA2D760 MA3D761 MA2D755 MA3D756 MA3D760 MA3U760 MA3D752 MA3D752A MA3D755 MA3U755

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202