MA75WA Search Results

MA151K

Abstract: MA151WA 610C 610D S10A
Contextual Info: — ft & MA1U152K M.4il’152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q M AI 11 MA112 MAI 13 MA115 M AI 16 « Vrrm fsm ft # tt ffl m s ft # t rr n s tt C t(p F ) ( *U U m ax (V) (mA) iF (m A ) T (° C ) (li

610C

Abstract: 610D S10A MA151WA
Contextual Info: — ft & MA1U152K M.4il’152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q M AI 11 MA112 MAI 13 MA115 M AI 16 « Vrrm fsm ft # ffl tt m s ft # t rr n s tt C t(p F ) ( *U U m ax (V) (mA) iF (m A ) T (° C ) (li

tb 495d

Abstract: 610C 610D S10A
Contextual Info: — ft & MA1U152K M.4il’152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q M AI 11 MA112 MAI 13 MA115 M AI 16 « Vrrm fsm ft # tt ffl m s ft # t rr n s tt C t(p F ) ( *U U m ax (V) (mA) iF (m A ) T (° C ) (li

MA3X075D

Abstract: MA3X075E MA75WA MA75WK
Contextual Info: Band Switching Diodes MA3X075D, MA3X075E MA75WA, MA75WK Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For band switching 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD

610c st

Abstract: 610C 610D S10A MA141K MA151K
Contextual Info: — ft & MA1U152K M.4il’152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q M AI 11 MA112 MAI 13 MA115 M AI 16 « Vrrm fsm ft # tt ffl m s ft # t rr n s tt C t(p F ) ( *U U m ax (V) (mA) iF (m A ) T (° C ) (li

MA141WA

Abstract: TL 494 CN 610C 610D S10A
Contextual Info: — ft & MA1U152K M.4il’ 152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q MAI 11 MA112 MAI 13 M A 115 MAI 16 MA132A MA 1 3 Z K MA132WA MA132WK MAI 3 3 MA141A MA141K MAI 41WA MA141WK MA142A MA142K MA142WA MA142WK

MA75WA

Abstract: MA3X075D SC-59A
Contextual Info: Band Switching Diodes MA3X075D MA75WA Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Symbol Rating Unit Reverse voltage (DC) VR 35 V Forward current (DC) IF 100 mA Topr −25 to +85 °C Tstg −55 to +150 °C Operating ambient temperature* Storage temperature

MA75WA

Contextual Info: MA111 Band Switching Diodes MA75WA Silicon epitaxial planer type Unit : mm +0.2 For band switching 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 +0.2 2 Rating Reverse voltage DC VR Forward current (DC) IF Operating ambient temperature Topr* Storage temperature

Contextual Info: Band Switching Diodes MA3X075D, MA3X075E MA75WA, MA75WK Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For band switching 0.16+0.10 –0.06 0.4±0.2 M Di ain sc te on na tin nc ue e/ d • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD

MA141WA

Abstract: 610C 610D S10A
Contextual Info: — ft & MA1U152K M.4il’ 152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q MAI 11 MA112 MAI 13 M A 115 MAI 16 MA132A MA13ZK MA132WA MA132WK MAI 3 3 « Vrrm töT fö"F » T tt s m ffl * Ct pF 0. 6 2 15 2 2 1.2

sis 756

Abstract: UAA 1002 610C 610D S10A MAI11 SC8A SC70 S10A MA151A
Contextual Info: — ft m £ X * ft # tt s m ft # & « Vrrm M A 1U 1 52K M .4il’152WA M A1U152W K tö T fö "F M A 1U 1 57A M A2S111 » T M A 4S159 M A57 M A72 M A73 MA75WA MA75WK M A77 MA8QWA MA80WK MA11Q M A I 11 M A 112 M A I 13 M A115 M A I 16 M A 132 A M A1 3ZK MA132W A

MA3X075D

Abstract: MA3X075E MA75WA MA75WK
Contextual Info: Band Switching Diodes MA3X075D, MA3X075E MA75WA, MA75WK Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For band switching 0.16+0.10 –0.06 0.4±0.2 • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD • Mini type package, allowing downsizing of equipment and

Contextual Info: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)

495d

Abstract: sis 756 MA151WA MA141WA MA151A 610C 610D S10A
Contextual Info: — ft & « Vrrm M A 132 A MA 13 Z K MA132W A MA132WK MAI 33 M A141 A M A 141 K M A I 4 1 WA MA141WK M A142 A föT tö T T ° C ( l i A) V r (V ) T ( ° C ) 0. 6 2 15 2 2 1 .2 3 10 3 3 3 1. 2 3 225 100 100* 100* 100 100* 0. 5 1. 2 1 1 1 1 100 100 100 100

MN1280

Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
Contextual Info: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 — MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S — MN6064R/S MN61074

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

15W ZENER DIODES

Abstract: bidirectional zener diodes ma27w MA28T PANASONIC MA4000 ma27 MINI 29 MA3062W MA75WA
Contextual Info: Diode • Silicon Diodes AVC Vr (V) Type No. ■ Silicon Diodes (Band Switch) AM f t A l VF (V) Ifm (mA) typ (mV/C) Package MA27/29 6 150 0.56 -0 .6 4 2 DO-35/34 D 28/26 MA27W/29W 6 100 1.18 -1 .3 6 4.6 DO-35/34 D 28/2S MA27T/29T 6 MA27Q/29Q 70 6 50 1.76 -2 .0 4

A4056

Abstract: A4047 D83 ZENER MA2430 A4091 MA207 460 00 16 A4100 A4160 A3100W MA2Z200
Contextual Info: ) ì ) Switching Diodes Line-up S S Mini Type 3 Pin) S Mini Type (2 Pin) S Mini Type (3 Pin) S Mini Type (4 Pin) S Mini Type (6 Pin) Glass Hole-through type Surface Mount Type Mini Type (3 Pin) Mini Type (4 Pin) Mini Type (6 Pin) T Mini Type (3 Pin) M Type