DS05-20905-1E
Abstract: BGA-48P-M13 FPT-48P-M19 MBM29DL64DF MBM29DL64DF-70
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-1E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL64DF-70 • DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be
|
Original
|
DS05-20905-1E
MBM29DL64DF-70
MBM29DL64DF
48-pin
48-ball
F0303
DS05-20905-1E
BGA-48P-M13
FPT-48P-M19
MBM29DL64DF-70
|
PDF
|
Diode SA98
Abstract: BGA-48P-M13 DS05 FPT-48P-M19 MBM29DL640E MBM29DL64DF MBM29DL64DF-70 SA71 SA140
Text: MBM29DL64DF-70 データシート 生産終息品 MBM29DL64DF -70 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及 び履歴目的でのみご利用願います。
|
Original
|
MBM29DL64DF-70
MBM29DL64DF
DS05-20905-3
MBM29DL64DF
DS05-20905-3
Diode SA98
BGA-48P-M13
DS05
FPT-48P-M19
MBM29DL640E
MBM29DL64DF-70
SA71
SA140
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20905-2E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL64DF-70 • DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be
|
Original
|
DS05-20905-2E
MBM29DL64DF-70
MBM29DL64DF
48-pin
48-ball
F0305
|
PDF
|
2202H
Abstract: MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2.0E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL64DF 70 • DESCRIPTION MBM29DL64DF is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device comes in 48-pin TSOP (I) and 48-ball FBGA packages. This device is designed to be
|
Original
|
MBM29DL64DF
48-pin
48-ball
MBM29DL64DF70
2202H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MBM29DL64DF-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
MBM29DL64DF-70
F0305
|
PDF
|
FPT-48P-M19
Abstract: MBM29DL64DF MBM29DL64DF-70 BGA-48P-M13
Text: MBM29DL64DF-70 Data Sheet Retired Product MBM29DL64DF -70 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications
|
Original
|
MBM29DL64DF-70
MBM29DL64DF
DS05-20905-3E
F0305
ProductDS05-20905-3E
FPT-48P-M19
MBM29DL64DF
MBM29DL64DF-70
BGA-48P-M13
|
PDF
|
4kw marking
Abstract: No abstract text available
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
F0307
4kw marking
|
PDF
|
SGA13
Abstract: No abstract text available
Text: MB84VD23481FJ-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
MB84VD23481FJ-70
F0307
SGA13
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MB84VD23381FJ-80 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
MB84VD23381FJ-80
F0307
|
PDF
|
MB84VF5F5F5J2-70
Abstract: MBM29DL64DF
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
F0302
MB84VF5F5F5J2-70
MBM29DL64DF
|
PDF
|
MB84VD23481FJ-70
Abstract: MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50310-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x16) FLASH MEMORY & 32 M (×16) Mobile FCRAMTM MB84VD23481FJ-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance 70 ns maximum access time (Flash)
|
Original
|
DS05-50310-2E
MB84VD23481FJ-70
65-ball
F0309
MB84VD23481FJ-70
MBM29DL64DF
|
PDF
|
MB84VF5F5F4J2-70
Abstract: MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50402-2E 3 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F5F4J2-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V
|
Original
|
DS05-50402-2E
MB84VF5F5F4J2-70
107-ball
F0302
MB84VF5F5F4J2-70
MBM29DL64DF
|
PDF
|
50501
Abstract: MB84VZ064D-70 MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50501-1E 4 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ064D-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V
|
Original
|
DS05-50501-1E
MB84VZ064D-70
107-ball
F0302
50501
MB84VZ064D-70
MBM29DL64DF
|
PDF
|
107-pin
Abstract: 4kw marking
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J1-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance
|
Original
|
MB84VF5F4F4J1-70
107-ball
107-pin
4kw marking
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MB84VF5F5F4J2-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
|
Original
|
MB84VF5F5F4J2-70
F0302
|
PDF
|
SA136
Abstract: SGA29 sA117 4kw marking SA97 Sa98 MB84VD23280FC-70 MBM29DL64DF SGA43 SA133
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
F0309
SA136
SGA29
sA117
4kw marking
SA97
Sa98
MB84VD23280FC-70
MBM29DL64DF
SGA43
SA133
|
PDF
|
4kw marking
Abstract: MB84VF5F4F4J1-70 MBM29DL64DF
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
|
Original
|
F0302
4kw marking
MB84VF5F4F4J1-70
MBM29DL64DF
|
PDF
|
107-pin
Abstract: FCRAM MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAM TM MB84VF5F4F5J1-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance
|
Original
|
MB84VF5F4F5J1-70
107-ball
107-pin
FCRAM
MBM29DL64DF
|
PDF
|
4kw marking
Abstract: MB84VF5F4F4J1-70 MBM29DL64DF
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50403-1E 3 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J1-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V
|
Original
|
DS05-50403-1E
MB84VF5F4F4J1-70
107-ball
65for
F0302
4kw marking
MB84VF5F4F4J1-70
MBM29DL64DF
|
PDF
|
MARKING HRA
Abstract: 4kw marking diode F4 4e
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 4Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ064G-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V
|
Original
|
MB84VZ064G-70
107-ball
MARKING HRA
4kw marking
diode F4 4e
|
PDF
|
a21l
Abstract: MARKING HRA SGA43 marking code 4e SA98 sga36 sga39 SA132 SGA33 sga5400
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 96M (x16) Page Mode FLASH MEMORY & 64M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAMTM MB84VFAF5F5J1-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V
|
Original
|
MB84VFAF5F5J1-70
115-ball
F0211
MB84VFAF5F5J1
a21l
MARKING HRA
SGA43
marking code 4e
SA98
sga36
sga39
SA132
SGA33
sga5400
|
PDF
|
4kw marking
Abstract: marking code 4e
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.5E 4Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ064D-70 • FEATURES • Power Supply Voltage of 2.7 to 3.1V
|
Original
|
MB84VZ064D-70
107-ball
4kw marking
marking code 4e
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50304-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) Mobile FCRAMTM MB84VD23381FJ-80 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance
|
Original
|
DS05-50304-3E
MB84VD23381FJ-80
65-ball
F0307
|
PDF
|
MSP55lv512
Abstract: MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A
Text: AF9845/45B/45C DEVICE LIST AF9845 GANG UNIT AF9845B GANG UNIT AF9845C GANG UNIT Flash Support Group,Inc.
|
Original
|
AF9723/23B
TEF808-50CF-01
FF804
50CARD
AF9845/45B/45C
FAT12FAT16
1GBit128MByte
Am27C400
Am29DL16xCB
TE003-48BG-07D
MSP55lv512
MSP55LV100S
MSP55LV128
34A65
fujitsu msp55lv512
MSP55LV100G
MSP55LV128M
MSP55LV160
MSP55LV100
MSP55LV160A
|
PDF
|