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    MCH3312 Price and Stock

    Rochester Electronics LLC MCH3312-EBM-TL-E

    PCH 4V DRIVE SERIES
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    DigiKey MCH3312-EBM-TL-E Bulk 15,000 2,664
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    Flip Electronics MCH3312-TL-E

    P-CHANNEL MOSFET FOR ULTRA-HIGH
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    DigiKey MCH3312-TL-E Reel 6,000
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    onsemi MCH3312-TL-E

    Transistor MOSFET P-Channel Enhancement 30V 2A 3-Pin Surface Mount - Tape and Reel (Alt: MCH3312-TL-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MCH3312-TL-E Reel 0 Weeks, 2 Days 5,264
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    Rochester Electronics MCH3312-TL-E 156,000 1
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    Flip Electronics MCH3312-TL-E 6,000
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    onsemi MCH3312-EBM-TL-E

    PCH 4V DRIVE SERIES '
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    Rochester Electronics MCH3312-EBM-TL-E 9,000 1
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    onsemi MCH3312EBMTLE

    P-CHANNEL SILICON MOSFET FOR ULTRAHIGH-SPEED SWITCHING APPLICATIONS Small Signal Field-Effect Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MCH3312EBMTLE 351,000
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    MCH3312 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCH3312 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF

    MCH3312 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CPH5822 Ordering number : ENN7702 CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General Purpose Switching Device Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)


    Original     		PDF ENN7702 CPH5822 MCH3312) SBS010M)

    diode N1004

    Abstract: CPH5822 MCH3312 N1004 SBS010M
    Text: CPH5822 Ordering number : ENN7702A CPH5822 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS010M)


    Original     		PDF CPH5822 ENN7702A MCH3312) SBS010M) diode N1004 CPH5822 MCH3312 N1004 SBS010M

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171


    Original     		PDF ENN6980 CPH5804 MCH3312) SBS006M) CPH5804]

    82306

    Abstract: MCH3312 CPH5852 SB1003M3
    Text: CPH5852 Ordering number : ENA0336 SANYO Semiconductors DATA SHEET CPH5852 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),


    Original     		PDF CPH5852 ENA0336 MCH3312) SB1003M3) A0336-6/6 82306 MCH3312 CPH5852 SB1003M3

    MCH3312

    Abstract: marking JM
    Text: Ordering number : ENN7009 MCH3312 P-Channel Silicon MOSFET MCH3312 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2167A [MCH3312] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65


    Original     		PDF ENN7009 MCH3312 MCH3312] MCH3312 marking JM

    CPH5821

    Abstract: MCH3312 SBS004 marking qx
    Text: CPH5821 Ordering number : ENN7701 CPH5821 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converter applications. Composite type with a P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS004)


    Original     		PDF CPH5821 ENN7701 MCH3312) SBS004) CPH5821 MCH3312 SBS004 marking qx

    MCH3312

    Abstract: CPH5854 SB1003M3 A05166 marking YG
    Text: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),


    Original     		PDF CPH5854 ENA0516 MCH3312) SB1003M3) A0516-6/6 MCH3312 CPH5854 SB1003M3 A05166 marking YG

    ENN8206

    Abstract: CPH5810 MCH3312
    Text: CPH5810 Ordering number : ENN8206 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an P-Channel Sillicon MOSFET MCH3312 and a Schottky Barrier Diode (SBS001)


    Original     		PDF CPH5810 ENN8206 MCH3312) SBS001) ENN8206 CPH5810 MCH3312

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN7009 MCH3312 MCH3312 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2167A [MCH3312] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65


    Original     		PDF ENN7009 MCH3312 MCH3312] MCH3312/D

    on line ups circuit diagrams

    Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
    Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm


    Original     		PDF EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04

    W507

    Abstract: FW507 MCH3312 SB1003M
    Text: FW507 注文コード No. N 8 4 0 3 三洋半導体データシート N FW507 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・低オン抵抗超高速スイッチング、低電圧駆動の P チャネル MOS 形電界効果トランジスタと逆回復時間が短く、


    Original     		PDF FW507 FW507 MCH3312 SB1003M 3000mm2 81205PA TB-00001717 IT08184 W507 MCH3312 SB1003M

    CPH5804

    Abstract: MCH3312 SBS006M IT03222
    Text: 注文コード No. N 6 9 8 0 CPH5804 No. N 6 9 8 0 62001 新 CPH5804 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 ・P チャネル MOS 形電界効果トランジスタ


    Original     		PDF CPH5804 MCH3312) SBS006M 600mm2 IT00633 IT00632 IT00634 IT00635 CPH5804 MCH3312 SBS006M IT03222

    CPH5810

    Abstract: MCH3312
    Text: CPH5810 注文コード No. N 8 2 0 6 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード CPH5810 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ（MCH3312）


    Original     		PDF CPH5810 MCH3312 SBS001 600mm2 12805PE TA-100105 IT09167 IT09166 CPH5810 MCH3312

    CPH5821

    Abstract: MCH3312 SBS004
    Text: CPH5821 注文コード No. N 7 7 0 1 三洋半導体データシート N CPH5821 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。


    Original     		PDF CPH5821 MCH3312) SBS004 600mm2 TA-100874 IT00622 IT00623 CPH5821 MCH3312

    1h223K

    Abstract: C3216JB 1H102K 1H103K 1H104K C1608JB PR0816P MB39A 132 MCH3308 C1608CH
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-71109-1Ea ASSP for Power Supply Applications Evaluation Board MB39A112 • DESCRIPTION The MB39A112 evaluation board is a surface mount circuit board with 3 channels of down conversion circuit. This evaluation board outputs voltage of 1.2 V, 3.3 V and 5.0 V from the output terminals of 3 systems, and


    Original     		PDF DS04-71109-1Ea MB39A112 MB39A112 1h223K C3216JB 1H102K 1H103K 1H104K C1608JB PR0816P MB39A 132 MCH3308 C1608CH

    CPH5854

    Abstract: MCH3312 SB1003M3 A0516
    Text: CPH5854 注文コード No. N A 0 5 1 6 三洋半導体データシート N CPH5854 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 型電界効果トランジスタ（MCH3312 とショットキバリアダイオード（SB1003M3）


    Original     		PDF CPH5854 MCH3312) SB1003M3 600mm2 90606PE TC-00000163 A0516-1/5 IT09554 CPH5854 MCH3312 A0516

    MCH3312

    Abstract: A916CY-2R0M A916CY-3R3M MB39A112 MCH3308 SBE001 VT100 MB39A112PFT RR0816P222D amplifer pch
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27239-1E ASSP For Power Supply Applications General-Purpose DC/DC Converter 3-ch DC/DC Converter IC MB39A112 • DESCRIPTION The MB39A112 is a 3-channel DC/DC converter IC using pulse width modulation (PWM) , and the MB39A112 is


    Original     		PDF DS04-27239-1E MB39A112 MB39A112 TSSOP-20P F0311 MCH3312 A916CY-2R0M A916CY-3R3M MCH3308 SBE001 VT100 MB39A112PFT RR0816P222D amplifer pch

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27239-1Ea ASSP For Power Supply Applications General-Purpose DC/DC Converter 3-ch DC/DC Converter IC MB39A112 • DESCRIPTION The MB39A112 is a 3-channel DC/DC converter IC using pulse width modulation (PWM) , and the MB39A112 is


    Original     		PDF DS04-27239-1Ea MB39A112 MB39A112 TSSOP-20P

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    TA 8403 A

    Abstract: w507 FW507 MCH3312 SB1003M
    Text: FW507 Ordering number : ENN8403 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FW507 General-Purpose Switching Device Applications Features • • Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and


    Original     		PDF FW507 ENN8403 FW507 MCH3312 SB1003M TA 8403 A w507

    RR0816P222D

    Abstract: A916CY-3R3M A916CY-2R0M MB39A112 MCH3308 MCH3312 SBE001 VT100 constant current power supply circuit schematic
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27239-1Ea ASSP For Power Supply Applications General-Purpose DC/DC Converter 3-ch DC/DC Converter IC MB39A112 • DESCRIPTION The MB39A112 is a 3-channel DC/DC converter IC using pulse width modulation (PWM) , and the MB39A112 is


    Original     		PDF DS04-27239-1Ea MB39A112 MB39A112 TSSOP-20P RR0816P222D A916CY-3R3M A916CY-2R0M MCH3308 MCH3312 SBE001 VT100 constant current power supply circuit schematic

    CPH5810

    Abstract: MCH3312
    Text: CPH5810 注文コード No. N 8 2 0 6 三洋半導体データシート N CPH5810 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ（MCH3312）


    Original     		PDF CPH5810 MCH3312 SBS001 600mm2 12805PE TA-100105 IT09167 IT09166 CPH5810 MCH3312

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN6980 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 /SANYO, DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171


    OCR Scan     		PDF ENN6980 CPH5804 MCH3312) SBS006M) CPH5804]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN7009 P-Channel Silicon MOSFET MCH3312 SANYO Ultrahigh-Speed Switching Applications Package Dimensions Features • Low O N -resistance. unit : mm • Ultrahigh-speed switching. 2167A • 4V drive. [M C H 3 3 1 2 ] , Specifications 0.85


    OCR Scan     		PDF ENN7009 MCH3312