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    A0516 Price and Stock

    Vishay Sfernice RCMA0516002BES03

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    Vishay Sfernice RCMA0516501FHA20

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    DigiKey RCMA0516501FHA20 Ammo Pack 500
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    Vishay Sfernice RCMA0516500FES03

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    DigiKey RCMA0516500FES03 Bag 10
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    Vishay Sfernice RCMA0516501FES03

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    Vishay Sfernice RCMA0516000BES03

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    A0516 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A0516YC280

    Abstract: No abstract text available
    Text: WESTCODE An Date:- 3 July, 2007 Data Sheet Issue:- 2 IXYS Company Provisional Data Asymmetric Thyristor Types A0516YC200 to A0516YC280 Development Type No.: AX195YC280 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1


    Original     		PDF A0516YC200 A0516YC280 AX195YC280 A0516YC200- A0516YC280

    A0516YC

    Abstract: asymmetric thyristor
    Text: WESTCODE An Date:- 3 July, 2007 Data Sheet Issue:- 2 IXYS Company Provisional Data Asymmetric Thyristor Types A0516YC200 to A0516YC280 Development Type No.: AX195YC280 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, note 1


    Original     		PDF A0516YC200 A0516YC280 AX195YC280 A0516YC200- A0516YC280 A0516YC asymmetric thyristor

    CPH5854

    Abstract: MCH3312 SB1003M3 A0516
    Text: CPH5854 注文コード No. N A 0 5 1 6 三洋半導体データシート N CPH5854 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 型電界効果トランジスタ（MCH3312 とショットキバリアダイオード（SB1003M3）


    Original     		PDF CPH5854 MCH3312) SB1003M3 600mm2 90606PE TC-00000163 A0516-1/5 IT09554 CPH5854 MCH3312 A0516

    Asymmetric Thyristors

    Abstract: Thyristor 3kV INDUCTION HEATING induction heating circuits A1080LCxxx Thyristor 6kA asymmetric thyristor asymmetric thyristor datasheet D-68623 A1237NC280
    Text: PRODUCT BRIEF Asymmetric Thyristors May 2010 - Issue 3 Major new silicon technology development Introducing new devices for fast thyristor applications. • A1237NC280 is a 2.8kV device in a 47mm pole Ø housing and has a typical tq of 30 µs, with VTM of 2.1V @ 2kA.


    Original     		PDF A1237NC280 A0516YC280 A1080LCxxx A1237NCxxx A0516YCxxx D-68623 Asymmetric Thyristors Thyristor 3kV INDUCTION HEATING induction heating circuits Thyristor 6kA asymmetric thyristor asymmetric thyristor datasheet

    Untitled

    Abstract: No abstract text available
    Text: M 2:1 33 DU ) 2x 18 ,5 n3 H( RC 4,6 2 3,5 2 4,5 Freistichtiefe 6,5 (21) 8,55 12,45 n6 Schutzvermerk nach DIN 34 (C) Fischer Elektronik 2003 Freimasstoleranz Oberfläche DIN ISO 2768m SA Datum Bearb. 28.08.2003 Name Harpain Werkstoff / Material AlMgSi0,5 F22


    Original     		PDF 2768m A0516S00000004H A0516S00000005H

    Untitled

    Abstract: No abstract text available
    Text: M 3:1 n3 15 ,5 4,6 2 2 4,5 Freistichtiefe 6,5 (21) 3,5 8,55 12,45 M (2:1) n6 Schutzvermerk nach DIN 34 (C) Fischer Elektronik 2003 Freimasstoleranz Oberfläche DIN ISO 2768m SA Datum Bearb. 27.08.2003 Name Harpain Werkstoff / Material AlMgSi0,5 F22 (EN AW 6060 T66)


    Original     		PDF 2768m A0516S00000002H A0516S00000003H

    MCH3312

    Abstract: CPH5854 SB1003M3 A05166 marking YG
    Text: CPH5854 Ordering number : A0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),


    Original     		PDF CPH5854 ENA0516 MCH3312) SB1003M3) A0516-6/6 MCH3312 CPH5854 SB1003M3 A05166 marking YG

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN Sí5341 CMOS LSI No. LC322260J, T-70/80 5341 SA%YO 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Read/Write Preliminary Overview Package Dimensions The LC322260J, T are CMOS dynamic RAMs operating on a single 5 V power source and having a 131072 words x


    OCR Scan     		PDF LC322260J, T-70/80 40-pin 44-pin 7W07b 0017bb7

    ras 0910

    Abstract: LC322260J LC322260T SOJ40 TSOP44 X5341 A05166
    Text: Ordering number : ENsK5341 CMOS LSI LC322260J, T-70/80 No. *<5341 s m Y o 2 MEG 131072 words x 16 bits DRAM Fast Page Mode, Byte Read/Write i Preliminary Overview Package Dimensions The LC322260J, T are CM OS dynam ic RA M s operating unit: mm on a single 5 V pow er source and having a 131072 words x


    OCR Scan     		PDF X5341 LC322260J, T-70/80 40-pin 44-pin ras 0910 LC322260J LC322260T SOJ40 TSOP44 X5341 A05166