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    MG75J1ZS50 Price and Stock

    Toshiba America Electronic Components MG75J1ZS50

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG75J1ZS50 56
    • 1 $63
    • 10 $63
    • 100 $50.4
    • 1000 $50.4
    • 10000 $50.4
    		Buy Now
    MG75J1ZS50 45
    • 1 $63
    • 10 $63
    • 100 $50.4
    • 1000 $50.4
    • 10000 $50.4
    		Buy Now
    MG75J1ZS50 20
    • 1 $34.125
    • 10 $34.125
    • 100 $32.8125
    • 1000 $32.8125
    • 10000 $32.8125
    		Buy Now

    MG75J1ZS50 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG75J1ZS50 Toshiba N channel IGBT Original PDF
    MG75J1ZS50 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG75J1ZS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF

    MG75J1ZS50 Datasheets Context Search

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    MG75J1ZS50

    Abstract: No abstract text available
    Text: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		PDF MG75J1ZS50 2-94D2A MG75J1ZS50

    Untitled

    Abstract: No abstract text available
    Text: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode


    Original     		PDF MG75J1ZS50 2-94D2A

    MG75J1ZS50

    Abstract: No abstract text available
    Text: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		PDF MG75J1ZS50 2-94D2A MG75J1ZS50

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    MG75J1ZS50

    Abstract: ZS50 MG75J1Z 4A05 diode
    Text: TOSHIBA MG75J1ZS50 MG75J1 ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG75J1ZS50 MG75J1 2-94D2A 100a/Â MG75J1ZS50 ZS50 MG75J1Z 4A05 diode

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MG75J1ZS50 MG75J1 ZS50 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT H IG H P O W E R SW IT C H IN G APPLICATIO N S. M O T O R C O N T R O L APPLIC ATIO N S. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One


    OCR Scan     		PDF MG75J1ZS50 MG75J1

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG75J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J1 ZS50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One


    OCR Scan     		PDF MG75J1ZS50 MG75J1 30/iS 2-94D2A

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG75J1ZS50 MG75J1 ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • 2-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG75J1ZS50 MG75J1 30/iS 2-94D2A

    PTS100

    Abstract: No abstract text available
    Text: TOSHIBA MG75J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode High Speed : tf= 0 ,3 0 ^ s MAX. Gc = 75A)


    OCR Scan     		PDF MG75J1ZS50 961001EAA2 100/JS* --18ii PTS100

    Untitled

    Abstract: No abstract text available
    Text: MG75J1ZS50 — H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • The Electrodes are Isolated from Case. High Inpul Impedance Enhancement-M ode High Speed : tf= 0.30/js MAX. (I q = 75A)


    OCR Scan     		PDF MG75J1ZS50 30/js MG75J1ZS50

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    MG40001US41

    Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
    Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50


    OCR Scan     		PDF MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50

    GT80J101

    Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
    Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412


    OCR Scan     		PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5