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    MG800FXF1US53

    Abstract: IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT MG800FXF MG800FX TOSHIBA IGBT DATA BOOK
    Text: MG800FXF1US53 TOSHIBA GTR Module Silicon N-Channel IEGT MG800FXF1US53 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C E E G E Maximum Ratings Ta = 25°C


    Original     		PDF MG800FXF1US53 MG800FXF1US53 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT MG800FXF MG800FX TOSHIBA IGBT DATA BOOK

    IEGT

    Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51
    Text: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.


    Original     		PDF BEE0030A IEGT TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51