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    Microchip Technology Inc CMIEGTQ100V65CX

    POWER IGBT TRANSISTOR
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    IEGT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IEGT 2100

    Abstract: IEGT ARF672 Ansaldo SPA
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS


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    ARF672 IEGT 2100 IEGT ARF672 Ansaldo SPA PDF

    IEGT

    Abstract: ARF670 1370a
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS


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    ARF670 IEGT ARF670 1370a PDF

    IEGT

    Abstract: ARF695
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS


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    ARF695 IEGT ARF695 PDF

    MG800FXF1US53

    Abstract: IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT MG800FXF MG800FX TOSHIBA IGBT DATA BOOK
    Text: MG800FXF1US53 TOSHIBA GTR Module Silicon N-Channel IEGT MG800FXF1US53 High Power Switching Applications Motor Control Applications • High input impedance • Enhancement mode • Electrodes are isolated from case. Equivalent Circuit C C C E E G E Maximum Ratings Ta = 25°C


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    MG800FXF1US53 MG800FXF1US53 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT MG800FXF MG800FX TOSHIBA IGBT DATA BOOK PDF

    IEGT

    Abstract: TOSHIBA IEGT MG400FXF2YS53 TOSHIBA SILICON N-CHANNEL IEGT IEGT toshiba TOSHIBA IEGT diode 4 kw Toshiba AC motor MG400FXF VARISTOR k275
    Text: MG400FXF2YS53 TOSHIBA GTR Module Silicon N-Channel IEGT MG400FXF2YS53 High Power Switching Applications Motor Control Applications Features High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit E1 C2 E1 C2 G1 G2 IEGT 2


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    MG400FXF2YS53 IEGT TOSHIBA IEGT MG400FXF2YS53 TOSHIBA SILICON N-CHANNEL IEGT IEGT toshiba TOSHIBA IEGT diode 4 kw Toshiba AC motor MG400FXF VARISTOR k275 PDF

    ARF673

    Abstract: v990a
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS


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    ARF673 ARF673 v990a PDF

    V435A

    Abstract: ARF462
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS


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    ARF462 V435A ARF462 PDF

    IEGT

    Abstract: ARF794HT
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS


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    ARF794HT IEGT ARF794HT PDF

    IEGT

    Abstract: TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 Transistor Silicon N Channel IEGT 39tf Induction Heating Resonant Inverter
    Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 µs typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)


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    GT40Q321 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 Transistor Silicon N Channel IEGT 39tf Induction Heating Resonant Inverter PDF

    IEGT

    Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51
    Text: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.


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    BEE0030A IEGT TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51 PDF

    ST2100GXH22A

    Abstract: TOSHIBA IEGT nikkei S-200 TOSHIBA IEGT 4500V ST1500GXH22 1000GXHH25 IEGT 4500V TOSHIBA SILICON N-CHANNEL IEGT IEGT nikkei S200
    Text: TOSHIBA ST2100GXH22A TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST2100GXH22A HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT C E E G MAXIMUM RATINGS (Ta=25degC) ITEMs


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    ST2100GXH22A 25degC) ST2100GXH22A TOSHIBA IEGT nikkei S-200 TOSHIBA IEGT 4500V ST1500GXH22 1000GXHH25 IEGT 4500V TOSHIBA SILICON N-CHANNEL IEGT IEGT nikkei S200 PDF

    MG1200FXF1US53

    Abstract: IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT 800 kw Toshiba AC motor IEGT toshiba
    Text: MG1200FXF1US53 TOSHIBA GTR Module Silicon N-Channel IEGT MG1200FXF1US53 High Power Switching Applications Motor Control Applications Features High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit C C C C E E E G E Maximum Ratings Ta = 25°C


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    MG1200FXF1US53 MG1200FXF1US53 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT 800 kw Toshiba AC motor IEGT toshiba PDF

    nikkei S-200

    Abstract: TOSHIBA IEGT IEGT 4500V ST1500GXH22 TOSHIBA IEGT 4500V IEGT nikkei S200 IEGT 4500V 1500A ST1500GXH22 IEGT ST1500GXH
    Text: TOSHIBA ST1500GXH22 TOSHIBA SILICON N-CHANNEL IEGT TENTATIVE DATA ST1500GXH22 HIGH POWER SWITCHING APPRICATIONs MOTOR CONTROL APPRICATIONs ・Enhancement Mode. ・Double side cooling type EQUIVALENT CIRCUIT C E E G MAXIMUM RATINGS (Ta=25degC) ITEMs


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    ST1500GXH22 25degC) 10ms-Halransportation nikkei S-200 TOSHIBA IEGT IEGT 4500V ST1500GXH22 TOSHIBA IEGT 4500V IEGT nikkei S200 IEGT 4500V 1500A ST1500GXH22 IEGT ST1500GXH PDF

    TOSHIBA IEGT

    Abstract: IGBT GT40Q321 with IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 TOSHIBA IEGT diode
    Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 s typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)


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    GT40Q321 TOSHIBA IEGT IGBT GT40Q321 with IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 TOSHIBA IEGT diode PDF

    IEGT

    Abstract: ARF794LT
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS


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    ARF794LT IEGT ARF794LT PDF

    IEGT

    Abstract: ARF694 igbt 3 KA C645A
    Text: POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - Fax + 39 010 8681180 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS


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    ARF694 IEGT ARF694 igbt 3 KA C645A PDF

    TOSHIBA IEGT

    Abstract: Toshiba injection
    Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 µs typ. (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)


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    GT40Q321 TOSHIBA IEGT Toshiba injection PDF

    ARF360

    Abstract: No abstract text available
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS


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    ARF360 ARF360 PDF

    IEGT 2100

    Abstract: ARF671 IEGT Ansaldo SPA IEGT 1500 IGBT I
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS


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    ARF671 IEGT 2100 ARF671 IEGT Ansaldo SPA IEGT 1500 IGBT I PDF

    IEGT

    Abstract: ARF664
    Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS


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    ARF664 IEGT ARF664 PDF

    IEGT

    Abstract: TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321
    Text: GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • The 5th generation · Enhancement-mode · High speed : tf = 0.41 µs typ. (IC = 40A) · Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A)


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    GT40Q321 IEGT TOSHIBA IEGT TOSHIBA SILICON N-CHANNEL IEGT GT40Q321 PDF

    IEGT

    Abstract: Ansaldo Trasporti ARF360 ARF462 ARF664 ARF671 ARF672 ARF673 ARF681 ARF694
    Text: FAST RECOVERY DIODES FOR IGBT's, IEGT's AND GTC's APPLICATIONS -Snubberless operation -Low losses -Improved recovery softness Tj blocking voltage current Vdc link forward voltage VT0 ANSALDO rt di/dt Irr Qrr case type Tjmax Tjmax Tjmax Tjmax [A] 180 [uC] 80


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    ARF360 ARF664 ARF462 ARF671 ARF681 ARF771 IEGT Ansaldo Trasporti ARF360 ARF462 ARF664 ARF671 ARF672 ARF673 ARF681 ARF694 PDF

    IEGT

    Abstract: 500A1000 ARF681
    Text: POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - Fax + 39 010 8681180 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation ARF681 FAST RECOVERY DIODE FOR IGBT, IEGT, GCT APPLICATIONS


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    ARF681 IEGT 500A1000 ARF681 PDF

    BD139 N

    Abstract: BD 139 BD139 NPN BD140 BD135 BD136
    Text: S C S -T H O M S O N M im [iEgTO *S BD135 BD137/BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD 135, BD 137 and BD 139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers


    OCR Scan
    BD135 BD137/BD139 OT-32 BD136 BD138 BD140. BD135 BD137 BD139 BD139 N BD 139 BD139 NPN BD140 PDF