ARF462 Search Results

ARF462 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ARF462		POSEICO SPA	FAST RECOVERY DIODE FOR IGBTs, IEGTs AND GTCs APPLICATIONS		Original	PDF
ARF462		Power Semiconductors	FAST RECOVERY DIODE		Original	PDF
ARF462A		Advanced Power Technology	RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 65V 150W 65MHz		Original	PDF
ARF462B		Advanced Power Technology	RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 65V 150W 65MHz		Original	PDF
ARF462S45		Power Semiconductors	FAST RECOVERY DIODE		Original	PDF

ARF462 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ARF462A Abstract: ARF462B VK200-4B Text: ARF462A ARF462B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 150W 65MHz The ARF462A and ARF462B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been	Original	ARF462A ARF462B O-247 65MHz ARF462A ARF462B 470nH VK200-4B ARF462A/B	PDF
Untitled Abstract: No abstract text available Text: ARF462A ARF462B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 150W 65MHz The ARF462A and ARF462B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been	Original	ARF462A ARF462B O-247 65MHz ARF462A ARF462B 470nH VK200-4B ARF462A/B	PDF
V435A Abstract: ARF462 Text: POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS	Original	ARF462 V435A ARF462	PDF
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original		PDF
IEGT Abstract: Ansaldo Trasporti ARF360 ARF462 ARF664 ARF671 ARF672 ARF673 ARF681 ARF694 Text: FAST RECOVERY DIODES FOR IGBT's, IEGT's AND GTC's APPLICATIONS -Snubberless operation -Low losses -Improved recovery softness Tj blocking voltage current Vdc link forward voltage VT0 ANSALDO rt di/dt Irr Qrr case type Tjmax Tjmax Tjmax Tjmax [A] 180 [uC] 80	Original	ARF360 ARF664 ARF462 ARF671 ARF681 ARF771 IEGT Ansaldo Trasporti ARF360 ARF462 ARF664 ARF671 ARF672 ARF673 ARF681 ARF694	PDF
ARF463A/ARF1500 Abstract: No abstract text available Text: 405 SW Columbia Street Bend, OR 97702 TEL: 541 382-8028 FAX: (541) 388-0364 http://www.advancedpower.com RF POWER MOSFETs Higher VoltageSmaller System SizeLower System Cost APT RF Power MOSFETs are optimized for high voltage power applications up to 120 MHz. The die geometry has	Original	O-247 ARF444* ARF445* 50V/1kV 25V/500V ARF446 ARF447 ARF448A/B ARF463A/ARF1500	PDF