MGFC1801 Search Results

MGFC1801 Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFC1801		Mitsubishi	FOR MICROWAVE LOW-NOISE AMPLIFIER N-CHANNEL SCHOTTKY BARRIER GATE TYPE		Scan	PDF
MGFC1801		Mitsubishi	FET, N Channel, ID 0.25 A		Scan	PDF
MGFC1801		Mitsubishi	FOR MICROWAVE LOW NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE		Scan	PDF
MGFC1801-A01		Mitsubishi	TRANS JFET N-CH 6V 250MA BULK		Scan	PDF
MGFC1801-A011		Mitsubishi	TRANS JFET N-CH 6V 250MA BULK		Scan	PDF
MGFC1801-A012		Mitsubishi	TRANS JFET N-CH 6V 250MA BULK		Scan	PDF
MGFC1801-A013		Mitsubishi	TRANS JFET N-CH 6V 250MA BULK		Scan	PDF
MGFC1801-A02		Mitsubishi	TRANS JFET N-CH 6V 250MA BULK		Scan	PDF
MGFC1801-A03		Mitsubishi	TRANS JFET N-CH 6V 250MA BULK		Scan	PDF

MGFC1801 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776	PDF
FET Spec sheet Abstract: mitsubishi microwave MGFC1801 4468 fet fet 4468 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The MGFC1801 medium-power GaAs FET with an Nchannel Schottky gate is designed for use in S to X band amplifiers and oscillators.	OCR Scan	MGFC1801 MGFC1801 100mA FET Spec sheet mitsubishi microwave 4468 fet fet 4468	PDF
mitsubishi microwave Abstract: MGFC1801 fet 4468 4468 fet Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The MGFC1801 medium-power GaAs FET with an Nchannel Schottky gate is designed for use in S to X band amplifiers and oscillators.	OCR Scan	MGFC1801 MGFC1801 100mA mitsubishi microwave fet 4468 4468 fet	PDF
MGF1601A Abstract: MGF1801 MGF1601 MGF1801-01 MGFc1801 Text: Die_ MGFC1801 Package MGF1601A MGF1801 ^M ITSUBISHI ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES Devices in this family are constructed using theMGFCl801 die. These devices are N-channel Schottky gate type and are suitable for use in medium output power amplifiers and	OCR Scan	theMGFCl801 MGF1601A/1801 MGFC1801 MGF1601A MGF1801 MGF1601A: MGFC1801 MGF1801 MGF1601 MGF1801-01	PDF