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    MGFC1801 Search Results

    MGFC1801 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC1801 Mitsubishi FOR MICROWAVE LOW-NOISE AMPLIFIER N-CHANNEL SCHOTTKY BARRIER GATE TYPE Scan PDF
    MGFC1801 Mitsubishi FET, N Channel, ID 0.25 A Scan PDF
    MGFC1801 Mitsubishi FOR MICROWAVE LOW NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE Scan PDF
    MGFC1801-A01 Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF
    MGFC1801-A011 Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF
    MGFC1801-A012 Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF
    MGFC1801-A013 Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF
    MGFC1801-A02 Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF
    MGFC1801-A03 Mitsubishi TRANS JFET N-CH 6V 250MA BULK Scan PDF

    MGFC1801 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    FET Spec sheet

    Abstract: mitsubishi microwave MGFC1801 4468 fet fet 4468
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The MGFC1801 medium-power GaAs FET with an Nchannel Schottky gate is designed for use in S to X band amplifiers and oscillators.


    OCR Scan     		PDF MGFC1801 MGFC1801 100mA FET Spec sheet mitsubishi microwave 4468 fet fet 4468

    mitsubishi microwave

    Abstract: MGFC1801 fet 4468 4468 fet
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC1801 FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE DESCRIPTION The MGFC1801 medium-power GaAs FET with an Nchannel Schottky gate is designed for use in S to X band amplifiers and oscillators.


    OCR Scan     		PDF MGFC1801 MGFC1801 100mA mitsubishi microwave fet 4468 4468 fet

    MGF1601A

    Abstract: MGF1801 MGF1601 MGF1801-01 MGFc1801
    Text: Die_ MGFC1801 Package MGF1601A MGF1801 ^M ITSUBISHI ELECTRONIC DEVICE GROUP DESCRIPTION FEATURES Devices in this family are constructed using theMGFCl801 die. These devices are N-channel Schottky gate type and are suitable for use in medium output power amplifiers and


    OCR Scan     		PDF theMGFCl801 MGF1601A/1801 MGFC1801 MGF1601A MGF1801 MGF1601A: MGFC1801 MGF1801 MGF1601 MGF1801-01