"Intelligent Power Devices"

Abstract: MIP805
Contextual Info: Panasonic Just fit to display o f portable set. ELECTRO LUMINESCENT LAMP DRIVER INTELLIGENT POWER DEVICES MIP805 • Feature •D riving o f large area EL with push pull dive circuit. •H igh voltage and CM OS control circuit is included. ■ Application

Contextual Info: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features ● Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. ● Oscillation circuit is incorporated ● EL voltage controlled push-pull drive system achieves higher EL

"Intelligent Power Device"

Abstract: "Solenoid Driver" transistor MIP504 MIP504 MIP508 MIP510 MIP511 MIP512 MIP513 MIP514
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • IPD Intelligent Power Device Application EL Driver Application Part No. Output MOS FET Drive Voltage VCC (V) VDSS (V) ID (mA) Oscillating Frequency fOSC (kHz) 2.5 to 3.5 100 20/70 120 MIP805 Input Voltage VIN (V) Output Breakdown Voltage

MIP2

Abstract: MIP16 MIP805
Contextual Info: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features unit: mm 0.25±0.1 Part A M Di ain sc te on na tin nc ue e/ d 12° ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g

Contextual Info: 6.5±0.2 5. .0 Ω 5.2 φ5 5. 2.0max. L D C CIL VCC DC ENB NC EL MIP805 GND EL RT2 EL RT1 SW 3V +CVCC – RT 1 2 3 4 E L T 5 5 6 K N 7 8 9 10 1 1 8 C

MIP805

Abstract: EL DRIVER
Contextual Info: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features 5 6 Unit Power supply voltage VCC − 0.5 to 6 V Input voltage (ENB) VENB − 0.5 to VCC + 0.5 V Output voltage (CIL) VCIL − 0.5 to 100 V Output voltage (DC) VDC − 0.5 to 100 V Output voltage (EL)

SSONF-10D

Abstract: MIP805
Contextual Info: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features 5 6 Unit Power supply voltage VCC − 0.5 to 6 V Input voltage (ENB) VENB − 0.5 to VCC + 0.5 V Output voltage (CIL) VCIL − 0.5 to 100 V Output voltage (DC) VDC − 0.5 to 100 V Output voltage (EL)

Contextual Info: Intelligent Power Devices IPDs MIP805 Silicon MOS IC • Features unit: mm 0.25±0.1 Part A 6 4.3±0.2 10 9 8 7 12° ■ Applications ● EL drive 123 4 5 0.5±0.07 Symbol Ratings Unit Power supply voltage VCC − 0.5 to 6 V Input voltage (ENB) VENB − 0.5 to VCC + 0.5

MIP9E01

Abstract: MIP9E02 MIP709 ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply

MIP9E01

Abstract: mip10 Matsua & SAW & IF matsua saw MIP108 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit

Matsua de

Abstract: MIP9E01 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 ● Single chip IC of protection function circuit

MIP9E01

Abstract: MIP9E02 MIP805 MIP709
Contextual Info: Intelligent Power Devices IPDs MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in

MIP9E01

Abstract: MIP0122SY MIP9E02 TO-220-A1 MIP0123SY MIP0125SY MIP816 MIP0123 matsua CHARGER ipd mip2
Contextual Info: Intelligent Power Devices IPDs MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.

MIP9E01

Abstract: MIP9E02 MIP9E ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply

mip2c1

Abstract: MIP2C10MP MIP2c mip2 dip8-a1 MIP9 MIP02 MIP803 0601V SLB00049AJD
Contextual Info: インテリジェントパワーデバイス IPD MIP2C10MP シリコンMOS形集積回路 • 特 長 .10 +0 0.25 -0.05 Unit : mm • 無負荷時の消費電力を大幅に削減(100 VAC入力時 : 20 mW, 従来品比 : 80% 削減) • チャージャ回路に必要な保護機能内蔵

MIP9E01

Abstract: MIP9E02
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated

MIP9E01

Abstract: MIP9E02 MIP0222 MIP0222SU matsua CHARGER mip0221
Contextual Info: Intelligent Power Devices IPDs MIP0221SU, MIP0222SU Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● Allowing to input worldwide mains (AC 85 to 274V) ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.

MIP9E01

Abstract: MIP9E02 MIP161 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP161 Silicon MOS IC • Features unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 1.0±0.1 0.1±0.05 0.93±0.1 0.8max 2.5±0.1 ■ Applications ● Switching power supply (to 5W) ● AC adaptor ● Battery charger 0.5±0.1 1.8±0.1 7.3±0.1

HT 10

Contextual Info: MIP501, MIP502 Intelligent Power Devices IPDs MIP501, MIP502 Silicon MOS IC MIP501 (V DSS > 40V Ron < 0.5Ω) ● Over-current-protection function built-in ● Reset function built-in 4.5±0.2 Unit : mm 90° 0.65±0.1 0.85±0.1 1.0±0.1 0.8C 0.8C 0.65±0.1

MIP2E3DMY

Abstract: MIP2E3D mosfet mar 709 MIP2E3 mip2e mip2 MIP806 MIP16 mip* 282 mip2e3dmy equivalent
Contextual Info: インテリジェントパワーデバイス IPD MIP2E3DMY シリコンMOS形集積回路 • 特 長 Unit : mm 2.8±0.2 1.5±0.2 15.4±0.3 φ 3.7±0.2 ■ 絶対最大定格 Ta = 25°C ± 3°C 1.4±0.1 定格 単位 ドレイン電圧 VD 700 V コントロール電圧

MIP9E01

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP115 Intelligent Power Devices IPDs MIP115 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit

IPD Converter

Abstract: MIP806 MIP814 MIP02 foreign exchange companies MIP2 MA2Z001 MIP501 MIP704 MIP805
Contextual Info: New L a r g e - s c r e e n E L D r i ve r M I P 8 1 4 • Overview Unit : mm Part A 4.3±0.2 0.25±0.1 10 9 8 7 6 123 4 5 0.5±0.07 12˚ 6.3±0.2 MIP814 is an IPD Intelligent Power Device that can drive large-screen EL display units with low current to deliver exceptionally bright pictures. Its

MIP51

Abstract: MIP806 MIP803 MIP501 MIP704 MIP805 MIP824 MIP825 MIP826 MIP2
Contextual Info: New EL Display Driving IPD Series with Built-in Diode MIP824/MIP825/MIP826 „ Overview Unit : mm This series of IPDs Intelligent Power Devices incorporates a diode which formerly was connected externally. It can drive an EL display with high brightness and low power consumption.

Matsua & SAW & IF

Contextual Info: MIP102 Intelligent Power Devices IPDs MIP102 For CMOS Type Switching Power Control Unit : mm ● Single chip IC with control circuit and output power MOS FET ● Various protective functions built-in : over-current/over-heat protec- 0.45 • Features 1 28