MIP51 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP517 Silicon MOSFET type integrated circuit • Features Unit : mm ■ Applications 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 3 • Lamp-Solenoid, driver • Motor driver

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP514 Silicon MOSFET type Integrated Circuit • Features Unit: mm • Built-in five protection functions (over-current, over-voltage, loadshort-circuit, over heat, ESD)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP512 (Tentative) Silicon MOSFET type Integrated Circuit • Features Unit: mm ■ Applications 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) 0.65 max. 14.5±0.5 (1.0) • Lamp • solenoid, and LED drive for Amusement machine

Contextual Info: Intelligent Power Devices IPDs MIP515 Silicon MOSFET type Integrated Circuit Unit: mm 5.0±0.2 • Features 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 8.0±0.2 • Built-in five protection functions (over-current, over-voltage, loadshort-circuit, over heat, ESD)

MIP516

Abstract: mosfet protection circuit diagram
Contextual Info: Intelligent Power Devices IPDs MIP516 Silicon MOSFET type integrated circuit • Features Unit : mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 3 ■ Applications 2 0.50+0.10 –0.05 Rating Unit VDS − 0.5 to +45 V Output current IO 1.0 A Input voltage VIN − 0.5 to +6.0

MIP9E

Abstract: MIP16 IPD Converter MIP2 MIP512 MIP9 mip4
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP512 (Tentative) Silicon MOSFET type Integrated Circuit • Features Unit: mm 6.9±0.1 4.0 0.7 0.65 max. ■ Absolute Maximum Ratings TC = 25°C ± 3°C Parameter

MIP512

Contextual Info: Intelligent Power Devices IPDs MIP512 (Tentative) Silicon MOSFET type Integrated Circuit • Features Unit: mm ■ Applications 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) 0.65 max. 14.5±0.5 (1.0) • Lamp • solenoid, and LED drive for Amusement machine • Motor, Relay drive for Factory Automation

MIP517

Contextual Info: Intelligent Power Devices IPDs MIP517 Silicon MOSFET type integrated circuit • Features Unit : mm ■ Applications 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 3 • Lamp-Solenoid, driver • Motor driver 2 0.4±0.2 2.8+0.2 –0.3 6 5° 5 1.50+0.25 –0.05 4 0.16+0.10

MIP16

Abstract: MIP515 MIP9E MIP02 mip3
Contextual Info: Intelligent Power Devices IPDs MIP515 Silicon MOSFET type Integrated Circuit Unit: mm 5.0±0.2 • Features 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 8.0±0.2 • Built-in five protection functions (over-current, over-voltage, loadshort-circuit, over heat, ESD)

"Intelligent Power Devices"

Abstract: MIP514
Contextual Info: Intelligent Power Devices IPDs MIP514 Silicon MOSFET type Integrated Circuit • Features Unit: mm • Built-in five protection functions (over-current, over-voltage, loadshort-circuit, over heat, ESD) • Both DC and AC power suply are available 6.9±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Intelligent Power Devices (IPDs) MIP516 Silicon MOSFET type integrated circuit • Features Unit : mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 3 ■ Applications 2 0.50+0.10 –0.05 Rating Unit VDS

MIP515

Contextual Info: Intelligent Power Devices IPDs MIP515 Silicon MOSFET type Integrated Circuit Unit: mm 5.0±0.2 • Features 4.0±0.2 8.0±0.2 • Built-in five protection functions (over-current, over-voltage, loadshort-circuit, over heat, ESD) • Both DC and AC power suply are available

MIP004

Contextual Info: MIP0040MS Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 8 Out Line DIP7-A1 Marking MIP004 A. ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C No. 1 Item Ratings Unit VIN –0.3 to 500

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

mip2f2

Abstract: power supply LED 3w mip2f2 MIP2F2 IC mip2f mip2fx IC301 MIP2C2 MIP2C2 MIP2F2 power supply mip2f2 MIP022X
Contextual Info: IPD Product Selection Guide October 1, 2008 Semiconductor Company, Panasonic Corporation Precautions on the Sales of IPDs 1 The sale and/or the export of IPD products to any customer or customers located in any country other than Japan is expressly prohibited by the Agreement made and executed by and between Power Integrations, Inc. and Panasonic Corporation.

MIP414

Abstract: MIP414MD
Contextual Info: Intelligent Power Devices IPDs MIP4140MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.

MIP9E01

Abstract: MIP9E02 MIP709 ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP704 Silicon MOS IC • Features ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply

MIP9E01

Abstract: mip10 Matsua & SAW & IF matsua saw MIP108 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP108 Intelligent Power Devices IPDs MIP108 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 1.27 Single chip IC of protection circuit

MIP417MD

Abstract: TO-220IPD7-A2 mip41 MIP16
Contextual Info: Intelligent Power Devices IPDs MIP4170MD Silicon MOS FET type integrated circuit • Features  Package  Highly effective and low noise at a regular load are achieved. Power consumption at a light load is reduced. Transformer sound measures are unnecessary.

Matsua de

Abstract: MIP9E01 4.5V TO 100V INPUT REGULATOR
Contextual Info: MIP106 Intelligent Power Devices IPDs MIP106 Silicon MOS IC Unit : mm • Features (6.0) ● Single chip IC with power MOS FET and CMOS control circuit ● Power MOS FET with high breakdown voltage and low input capaci- (4.6) 24 ● Single chip IC of protection function circuit

MIP9E01

Abstract: MIP9E02 MIP805 MIP709
Contextual Info: Intelligent Power Devices IPDs MIP705 Silicon MOS IC Unit: mm • Applications • For automotive electric equipment (relay or solenoid driver) 0.5±0.1 0.8 max. 1.8±0.1 2.5±0.1 7.3±0.1 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in

MIP9E01

Abstract: MIP0122SY MIP9E02 TO-220-A1 MIP0123SY MIP0125SY MIP816 MIP0123 matsua CHARGER ipd mip2
Contextual Info: Intelligent Power Devices IPDs MIP0122SY, MIP0123SY, MIP0124SY, MIP0125SY Silicon MOS IC • Features unit: mm ● Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits ● A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated.

MIP9E01

Abstract: MIP9E02 MIP9E ipd mip2 ipd mip4
Contextual Info: Intelligent Power Devices IPDs MIP504 Silicon MOS IC • Features unit: mm ● 3-pin intelligent power device ● Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated ● Acceptable both AC and DC power supply

"Intelligent Power Device"

Abstract: "Solenoid Driver" transistor MIP504 MIP504 MIP508 MIP510 MIP511 MIP512 MIP513 MIP514
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • IPD Intelligent Power Device Application EL Driver Application Part No. Output MOS FET Drive Voltage VCC (V) VDSS (V) ID (mA) Oscillating Frequency fOSC (kHz) 2.5 to 3.5 100 20/70 120 MIP805 Input Voltage VIN (V) Output Breakdown Voltage