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    onsemi MMBTH10LT1G

    RF TRANS NPN 25V 650MHZ SOT23-3
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    DigiKey MMBTH10LT1G Reel 111,000 3,000
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    MMBTH10LT1G Ammo Pack 27 Weeks, 4 Days 1
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    Mouser Electronics MMBTH10LT1G 18,868
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    Verical MMBTH10LT1G 150,000 3,000
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    MMBTH10LT1G 42,000 3,000
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    MMBTH10LT1G 36,000 3,000
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    MMBTH10LT1G 18,868 216
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    Newark MMBTH10LT1G Cut Tape 9,631 1
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    MMBTH10LT1G Reel 3,000
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    Rochester Electronics MMBTH10LT1G 992,661 1
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    MMBTH10LT1G 18,868
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    MMBTH10LT1G Cut Tape 661
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    Master Electronics MMBTH10LT1G 42,000
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    New Advantage Corporation MMBTH10LT1G 183,000 1
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    Rochester Electronics LLC MMBTH10

    RF SMALL SIGNAL TRANSISTOR
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    DigiKey MMBTH10 Bulk 84,000 8,876
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    onsemi MMBTH10-4LT1G

    RF TRANS NPN 25V 800MHZ SOT23-3
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    DigiKey MMBTH10-4LT1G Reel 36,000 3,000
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    Avnet Americas MMBTH10-4LT1G Reel 0 Weeks, 2 Days 23,810
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    Mouser Electronics MMBTH10-4LT1G 334,537
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    Verical MMBTH10-4LT1G 24,049 224
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    MMBTH10-4LT1G 21,000 3,000
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    Newark MMBTH10-4LT1G Cut Tape 8,230 5
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    MMBTH10-4LT1G Reel 9,000
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    Onlinecomponents.com MMBTH10-4LT1G 21,000
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    Quest Components MMBTH10-4LT1G 800
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    MMBTH10-4LT1G 90
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    Avnet Asia MMBTH10-4LT1G 10 Weeks 27,000
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    Avnet Silica MMBTH10-4LT1G 11 Weeks 3,000
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    EBV Elektronik MMBTH10-4LT1G 12 Weeks 3,000
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    Master Electronics MMBTH10-4LT1G 21,000
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    onsemi MMBTH10LT3G

    RF TRANS NPN 25V 650MHZ SOT23-3
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    DigiKey MMBTH10LT3G Reel 30,000 10,000
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    MMBTH10LT3G Cut Tape 9,485 1
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    Mouser Electronics MMBTH10LT3G 19,800
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    Diodes Incorporated MMBTH10-7-F

    RF TRANS NPN 25V 650MHZ SOT23-3
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    DigiKey MMBTH10-7-F Reel 12,000 3,000
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    MMBTH10-7-F 8,940
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    MMBTH10 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MMBTH10 Diodes NPN SURFACE MOUNT VHF/UHF TRANSISTOR Original PDF
    MMBTH10 Diodes NPN SURFACE MOUNT VHF/UHF TRANSISTOR Original PDF
    MMBTH10 Fairchild Semiconductor NPN RF Transistor Original PDF
    MMBTH10 Fairchild Semiconductor NPN RF Transistor Original PDF
    MMBTH10 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
    MMBTH10 Kexin NPN Silicon VHF/UHF Transistor Original PDF
    MMBTH10 Micro Commercial Components NPN VHF/UHF Transistor Original PDF
    MMBTH10 National Semiconductor NPN RF Transistor Original PDF
    MMBTH10 PanJit Semiconductors NPN HIGH FREQUENCY TRANSISTOR Original PDF
    MMBTH10 Sinyork Mini size of Discrete semiconductor elements Original PDF
    MMBTH10 TY Semiconductor NPN Silicon VHF/UHF Transistor - SOT-23 Original PDF
    MMBTH10 Weitron NPN Silicon VHF/UHF Transistor Original PDF
    MMBTH10 Motorola European Master Selection Guide 1986 Scan PDF
    MMBTH10 Motorola NPN silicon VHF/UHF transistor. Scan PDF
    MMBTH10 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MMBTH10 National Semiconductor Sulface Mount Transistors Scan PDF
    MMBTH10 National Semiconductor RF Amplifiers Scan PDF
    MMBTH10-4LT1 On Semiconductor MMBTH10 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, 3 PIN, BIP RF Small Signal Original PDF
    MMBTH10-4LT1 On Semiconductor VHF/UHF Transistor Original PDF
    MMBTH10-4LT1 On Semiconductor VHF/UHF Transistor (NPN Silicon) Original PDF

    MMBTH10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking code 3EM SOT-23

    Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
    Text: MMBTH10LT1G, MMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6


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    PDF MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G AEC-Q101 OT-23 O-236) MMBTH10LT1/D transistor marking code 3EM SOT-23 NSVMMBTH10 MMBTH10LT1G transistor marking 3em transistor 3em Marking code mps

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR POWER SEMICONDUCTOR Features • • • Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications


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    PDF MMBTH10 OT-23 OT-23, MIL-STD-202, 100MHz, DS31031

    transistor marking k3y

    Abstract: amplifier marking code D J-STD-020A MMBTH10 MMBTH10-7 marking K3X
    Text: MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA


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    PDF MMBTH10 100mA OT-23 OT-23, J-STD-020A MMBTH10-7 3000/Tape com/datasheets/ap02007 DS31031 transistor marking k3y amplifier marking code D J-STD-020A MMBTH10 MMBTH10-7 marking K3X

    mps 1049

    Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS


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    PDF MMBTH10LT1, MMBTH10-4LT1 mps 1049 JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 3 1 2 SOT-23 *Pb-free plating product number: MMBTH10L ORDERING INFORMATION


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    PDF MMBTH10 MMBTH10 OT-23 MMBTH10L MMBTH10-x-AE3-R MMBTH10L-x-AE3-R QW-R206-003

    mmbth10

    Abstract: MMBTH10LT1 M33 thermal marking M33 RB marking
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0


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    PDF MMBTH10LT1 236AB) 1000MHz mmbth10 MMBTH10LT1 M33 thermal marking M33 RB marking

    MPSH10

    Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
    Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


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    PDF MPSH10 MMBTH10 OT-23 MPSH10 MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters

    transistor marking k3y

    Abstract: 1b1-1
    Text: MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR NEW PRODUCT Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA


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    PDF MMBTH10 100mA OT-23 OT-23, MIL-STD-202, 100mA, 400mA 100MHz, 300ms, DS31031 transistor marking k3y 1b1-1

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR SPICE MODEL: MMBTH10 Features • · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA


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    PDF MMBTH10 100mA OT-23 OT-23, J-STD-020A MIL-STD-202, DS31031

    MPSH10 fairchild transistor

    Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


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    PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223

    MMBTH10

    Abstract: No abstract text available
    Text: MMBTH10 NPN HIGH FREQUENCY TRANSISTOR This device is designed for VHF/UHF amplifier applications and high output VHF oscillators. 3 COLLECTOR 1 BASE SPECIFICATION FEATURES Guaranteed Minimum Current Gain-Bandwidth Product of 650 MHz Collector Currents up to 50mA


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    PDF MMBTH10 OT-23 OT-23 MMBTH10-T/R7 MMBTH10-T/R13 MMBTH10

    2k3h

    Abstract: MMBTH10 Spice Model
    Text: SPICE MODEL: MMBTH10 MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators · · High Current Gain Bandwidth Product · · Lead Free/RoHS Compliant Note 3 SOT-23 Ideal for Mixer and RF Amplifier Applications with collector


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    PDF MMBTH10 100mA AEC-Q101 OT-23 OT-23 J-STD-020C DS31031 2k3h MMBTH10 Spice Model

    CBVK741B019

    Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency


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    PDF MPSH10 MMBTH10 MPSH10 OT-23 CBVK741B019 F63TNR MMBTH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)


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    PDF MMBTH10 Freq650M

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT-23 225 mW Unit:inch mm MECHANICAL Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx weight : MAXIMUM RATINGS R A T IN G S YM B O L VA L UE U N IT C o lle c to r-E mi tte r Vo lta g e


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    PDF MMBTH10 OT-23 OT-23, MIL-STD-750, 2012-REV

    transistor 3em

    Abstract: marking 3EM sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTH10 TRANSISTOR NPN SOT–23 FEATURES  VHF/UHF Transistor MARKING: 3EM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value


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    PDF OT-23 MMBTH10 100MHz transistor 3em marking 3EM sot-23

    marking 3EM sot-23

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTH10LT1 1. BASE TRANSISTOR( NPN ) 2. EMITTER 3. COLLECTOR FEATURES 1.0 Power dissipation PCM : 0.225 W(Tamb=25℃) Collector current ICM : 0.05


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    PDF OT-23 MMBTH10LT1 MMBTH10LT1 037TPY 950TPY 550REF 022REF marking 3EM sot-23

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10W VHF/UHF Transistors COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE FEATURES: 2 2 EMITTER SOT-323(SC-70) * We declare that the material of product compliance with RoHS requirements. Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Symbol Value Unit


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    PDF MMBTH10W OT-323 SC-70) 10-Jun-2011 OT-323

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon VHF/UHF Transistor MMBTH10 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Ideal for Mixer and RF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 ● High Current Gain Bandwidth Product 0.4 3 2 +0.1 0.95-0.1


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    PDF MMBTH10 OT-23 100MHz

    3em smd

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification MMBTH10 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Ideal for Mixer and RF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 ● High Current Gain Bandwidth Product 0.4 3 2 +0.1 0.95-0.1 +0.1


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    PDF MMBTH10 OT-23 100MHz 3em smd

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION  The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver.  ORDERING INFORMATION Ordering Number Note:  MMBTH10G-x-AE3-R


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    PDF MMBTH10 MMBTH10 MMBTH10G-x-AE3-R MMBTH10G-x-AL3-R MMBTH10G-x-AN3-R MMBTH10G-x-AQ3-R OT-23 OT-323 OT-523 OT-723

    transistor marking 3em

    Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
    Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc


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    PDF MMBTH10LT1, MMBTH10-4LT1 r14525 MMBTH10LT1/D transistor marking 3em MMBTH10LT1 mmbth10 MMBTH10-4LT1

    mpsh10

    Abstract: MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p
    Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C C E E TO-92 B SOT-23 B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency


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    PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p

    TO236

    Abstract: MMBTH30 to-236
    Text: NATL National æ m ISemiconductor Surface Mount Transistors SEMICOND RF Amplifiers and Oscillators— NPN Type No. Case Style v CEO V ebo V (V) Min Min CBO Vcb (" A ) Max ' ' 8 1^4 Vce f>FE Min Max (mA) (V) 12 2.5 20 15 25 MMBTH10 TO-236 (49) 30 25


    OCR Scan
    PDF O-236 MMBTH10 MMBTH30 MMBTH11 TO236 to-236