MPSH10 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number

MPSH10P

Abstract: DSA003760
Contextual Info: MPSH10P 1.0 VCE=-10V VCE=-10V 175°C -55°C 0.8 100 VBE - Volts hFE -Gain 150 100°C 25°C 0.6 25°C 100°C 0.4 175°C -55°C 50 0.1 1 10 0.1 1 IC - (mA) IC - (mA) hFE v IC VBE(on) v IC 1500 VCE=10V f=100MHz 1000 10 100 500 0.1 1 10 100 E-Line TO92 Compatible

MPSH10

Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
Contextual Info: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

BC237

Abstract: MPSH10 502 mpsa42 npn transistor to-92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc Collector – Base Voltage VCBO

MPSH10 fairchild transistor

Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSA10

Abstract: MPSH10 mps h10
Contextual Info: MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage

CMPSH10

Contextual Info: ON Semiconductort VHF/UHF Transistor MPSH10 NPN Silicon ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Total Device Dissipation @ TA = 25°C

MPSH10 datasheet

Abstract: 100MHZ MPSH10
Contextual Info: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER

CBVK741B019

Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10 s parameters

Abstract: MPSH10
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO

BSR12

Contextual Info: Concise Catalogue 1996 Philips Semiconductors RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS Wideband transistors WIDEBAND TRANSISTORS FOR HIGH-SPEED SWITCHING APPLICATIONS polarity type number BSR12 MPSH10 PMBTH10 PMBTH81 ratinas V CEO V

MPSH10

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSH10 Features • • • Capable of 0.35Watts of Power Dissipation. Collector Current: 0.05A Lead Free Finish/RoHS Compliant "P" Suffix designates

MPSH10 S parameters

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: ON Semiconductort VHF/UHF Transistor MPSH10 NPN Silicon ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 3.0 Vdc Total Device Dissipation @ TA = 25°C

MPSH10

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSH10 Features • • • Capable of 0.35Watts of Power Dissipation. Collector Current: 0.05A Lead Free Finish/RoHS Compliant "P" Suffix designates

mpsh10

Abstract: MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C C E E TO-92 B SOT-23 B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10 datasheet

Abstract: UTC200 MPSH10 100MHZ
Contextual Info: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER

Contextual Info: Small Signal RF/VHF/UHF Transistors Part No. Polarity VCEO V 2N5770 MPS5179 MPSH10 MPSH11 PN3563 PN918 NPN 15 12 25 25 15 15 fT Min. @ Max. (MHz) (MHz) 900 900 650 650 600 600 1800 2000 1500 1500 VCE & IC VCE IC Cob Max. (V) (mA) (pF) 6 10 10 10 - 8 5 4

MPSH10 H parameters

Contextual Info: UNISONICTECHNOLOGIESCO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF T RAN SI ST OR ̈ DESCRI PT I ON The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ̈ ORDERI N G I N FORM AT I ON Ordering Number

Contextual Info: MPSH10 MPSH11 SILICON NPN RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator

MPSH10 datasheet

Contextual Info: MPSH10/11 MPSH10/11 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. BASE 0.35 W (Tamb=25℃) 2. EMITTER Collector current ICM: 0.05 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃

MPSH10

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSH10 Features • • • Capable of 0.35Watts of Power Dissipation. Collector Current: 0.05A Lead Free Finish/RoHS Compliant "P" Suffix designates

MPSH10

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSH10/11 Features • • Capable of 0.35Watts of Power Dissipation. Collector Current: 0.05A x Case Material: Molded Plastic.

MPSH10

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSH10/11 Features • • Capable of 0.35Watts of Power Dissipation. Collector Current: 0.05A • Case Material: Molded Plastic.