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    MMIX4B20N300 Search Results

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    MMIX4B20N300 Price and Stock

    IXYS Corporation MMIX4B20N300

    IGBT F BRIDGE 3000V 34A 24SMPD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMIX4B20N300 Tube 295 1
    • 1 $105
    • 10 $105
    • 100 $105
    • 1000 $105
    • 10000 $105
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    Mouser Electronics MMIX4B20N300
    • 1 -
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    • 100 -
    • 1000 $105
    • 10000 $105
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    Future Electronics MMIX4B20N300 Tube 24 Weeks 20
    • 1 -
    • 10 -
    • 100 $94.03
    • 1000 $94.03
    • 10000 $94.03
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    TTI MMIX4B20N300 Tube 300
    • 1 -
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    • 100 -
    • 1000 $140
    • 10000 $140
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    Littelfuse Inc MMIX4B20N300

    Disc Igbt Smpd Pkg-Bimosfet Smpd-B/ Tube |Littelfuse MMIX4B20N300
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MMIX4B20N300 Bulk 300
    • 1 -
    • 10 -
    • 100 $110.04
    • 1000 $110.04
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    IXYS Integrated Circuits Division MMIX4B20N300

    IGBT DIS.DIODE FOUR 14A 3000V H.VOLTAGE 24-SMPD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik MMIX4B20N300
    • 1 $201.21896
    • 10 $201.21896
    • 100 $191.6371
    • 1000 $191.6371
    • 10000 $191.6371
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    MMIX4B20N300 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMIX4B20N300 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Arrays - MOSFET N-CH Original PDF

    MMIX4B20N300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMIX4B20N300

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 Electrically Isolated Tab VCES = 3000V IC110 = 14A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings


    Original     		PDF MMIX4B20N300 IC110 IC110 MMIX4B20N300 6-05-12-B

    MMIX4B20N300

    Abstract: G2 - 395 DS100432
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 Electrically Isolated Tab VCES = 3000V IC90 = 15A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings


    Original     		PDF MMIX4B20N300 MMIX4B20N300 1-23-09-A G2 - 395 DS100432

    MMIX4B20N300

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 (Electrically Isolated Tab) G4 G3 C2 E3E4 Symbol Test Conditions Maximum Ratings


    Original     		PDF IC110 MMIX4B20N300 MMIX4B20N300 6-05-12-B

    mini inductances

    Abstract: DMA90U1800LB MMIX1F44N100Q3 MMIX4B20N300
    Text: IXYSPOWER P R O D U C T B R I E F Surface Mount Power Device SMPD and Mini SMPD Packages Lighter weight, more power(ultra-low profile, energy efficient, and rugged) January 2013 SMPD-X SMPD OVERVIEW IXYS introduces a new packaging technology – the Surface Mount Power Device (SMPD)


    Original     		PDF OT-227 O-264 PLUS247 mini inductances DMA90U1800LB MMIX1F44N100Q3 MMIX4B20N300