MMIX4B20N300
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 Electrically Isolated Tab VCES = 3000V IC110 = 14A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings
|
Original
|
PDF
|
MMIX4B20N300
IC110
IC110
MMIX4B20N300
6-05-12-B
|
MMIX4B20N300
Abstract: G2 - 395 DS100432
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 Electrically Isolated Tab VCES = 3000V IC90 = 15A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings
|
Original
|
PDF
|
MMIX4B20N300
MMIX4B20N300
1-23-09-A
G2 - 395
DS100432
|
MMIX4B20N300
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 (Electrically Isolated Tab) G4 G3 C2 E3E4 Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
IC110
MMIX4B20N300
MMIX4B20N300
6-05-12-B
|