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NXP Semiconductors MRFE6VP61K25HSR6 RF MOSFET LDMOS 50V NI1230
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MRFE6VP61K25HSR6 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MRFE6VP61K25HSR6		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, MOSFET RF N-CH 1.25KW NI-1230S		Original	PDF

MRFE6VP61K25HSR6 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25HR6
mrfe6vp61k25h Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
ATC200B103KT50X Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X
MRFE6VP61 Abstract: MRFE6VP 1812sms-39njlc MRFE6VP61K25H J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 3, 10/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25GSR5 MRFE6VP61 MRFE6VP 1812sms-39njlc J690 ATC100B471JT200XT transistor MRFE6VP61K25H mrfe6vp61k2 MIN02--002DC390J--F ATC100B102KT50XT
MRFE6VP61K25H Abstract: MRFE6VP61K25HR6 AN1955 mrfe6vp61k2 A02TKLC ad255 HSR6 UT141C Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25H AN1955 mrfe6vp61k2 A02TKLC ad255 HSR6 UT141C
MRFE6VP61K25H Abstract: MRFE6VP61K25HR6 MRFE6VP MRFE6VP61K25HSR6 MRFE6VP61 CDR33BX104AKYS ad255 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 0, 11/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HSR6 MRFE6VP61K25H MRFE6VP MRFE6VP61K25HSR6 MRFE6VP61 CDR33BX104AKYS ad255 AN1955