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    MT3S07FS Search Results

    MT3S07FS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT3S07FS Toshiba VHF~UHF Band Low-Noise Amplifier Applications Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S07T MT3S05T MT3S07FS (MT3S05FS) Corresponding three-pin products: TESM(fSM) mold products Rating Symbol


    Original     		PDF MT6L55FS MT3S07T MT3S07FS) MT3S05T MT3S05FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. TESM(fSM) mold products Q2 MT3S07T MT3S11T (MT3S07FS)


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L74FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L74FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S110FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		PDF MT6L74FS MT3S07FS MT3S110FS

    MT3S05FS

    Abstract: MT3S05T MT3S07FS MT3S07T MT6L55FS
    Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products 6 2 5 3 4 +0.02 Q1 Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Corresponding three-pin products:


    Original     		PDF MT6L55FS MT3S07T MT3S05T MT3S07FS) MT3S05FS) MT3S05FS MT3S05T MT3S07FS MT3S07T MT6L55FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07FS MT3S11AFS Maximum Ratings (Ta = 25°C)


    Original     		PDF MT6L71FS MT3S07FS MT3S11AFS

    Untitled

    Abstract: No abstract text available
    Text: MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		PDF MT6L75FS MT3S07FS MT3S106FS

    MT3S07FS

    Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05


    Original     		PDF MT6L63FS MT3S11FS) MT3S11T MT3S07FS) MT3S07T MT3S07FS MT3S07T MT3S11FS MT3S11T MT6L63FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10


    Original     		PDF MT6L75FS MT3S07FS MT3S106FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. fSM mold products Q2 MT3S07FS MT3S11AFS Maximum Ratings (Ta = 25°C)


    Original     		PDF MT6L71FS MT3S07FS MT3S11AFS

    MT3S07FS

    Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05


    Original     		PDF MT6L63FS MT3S11FS) MT3S11T MT3S07FS) MT3S07T MT3S07FS MT3S07T MT3S11FS MT3S11T MT6L63FS

    MT3S07FS

    Abstract: MT6L71FS
    Text: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07FS MT3S11AFS 2 5 3 4 0.15±0.05 0.35 0.35


    Original     		PDF MT6L71FS MT3S11AFS MT3S07FS MT3S07FS MT6L71FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L73FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L73FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S109FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded


    Original     		PDF MT6L73FS MT3S07FS MT3S109FS

    MT3S07FS

    Abstract: No abstract text available
    Text: MT3S07FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07FS Unit: mm Superior performance in buffer applications Superior noise characteristics : NF = 1.6 dB, |S21e|2 = 8 dB f = 2 GHz 1 3 2 0.1±0.05 +0.02 Lead (Pb)-free. 0.8±0.05 1.0±0.05 0.48 -0.04


    Original     		PDF MT3S07FS MT3S07FS

    MT3S07FS

    Abstract: No abstract text available
    Text: MT3S07FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07FS Unit: mm Superior performance in buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.6 dB, |S21e| = 8 dB f = 2 GHz 0.35±0.05


    Original     		PDF MT3S07FS MT3S07FS

    Untitled

    Abstract: No abstract text available
    Text: MT6L74FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L74FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S110FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10


    Original     		PDF MT6L74FS MT3S07FS MT3S110FS

    MT3S07FS

    Abstract: No abstract text available
    Text: MT3S07FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07FS Unit: mm Superior performance in buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.6 dB, |S21e| = 8 dB f = 2 GHz 0.35±0.05


    Original     		PDF MT3S07FS MT3S07FS

    MT3S07FS

    Abstract: T304
    Text: MT3S07FS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S07FS 単位: mm Buffer 用途に優れています。 • 雑音特性が優れています。 0.2±0.05 • 0.15±0.05 ○ UHF～VHF 帯低電圧動作・低雑音増幅用


    Original     		PDF MT3S07FS MT3S07FS T304

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Maximum Ratings (Ta = 25°C)


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07FS MT3S11AFS Symbol Rating Q1 Q2 VCBO 10


    Original     		PDF MT6L71FS MT3S07FS MT3S11AFS

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Rating Symbol


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Maximum Ratings (Ta = 25°C) Characteristic fS6


    Original     		PDF MT6L55FS MT3S07T MT3S07FS) MT3S05T MT3S05FS)

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


    Original     		PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


    Original     		PDF SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919