Untitled
Abstract: No abstract text available
Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S07T MT3S05T MT3S07FS (MT3S05FS) Corresponding three-pin products: TESM(fSM) mold products Rating Symbol
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MT6L55FS
MT3S07T
MT3S07FS)
MT3S05T
MT3S05FS)
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. TESM(fSM) mold products Q2 MT3S07T MT3S11T (MT3S07FS)
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Original
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MT6L63FS
MT3S07T
MT3S07FS)
MT3S11T
MT3S11FS)
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L74FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L74FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S110FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
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MT6L74FS
MT3S07FS
MT3S110FS
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MT3S05FS
Abstract: MT3S05T MT3S07FS MT3S07T MT6L55FS
Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products 6 2 5 3 4 +0.02 Q1 Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Corresponding three-pin products:
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MT6L55FS
MT3S07T
MT3S05T
MT3S07FS)
MT3S05FS)
MT3S05FS
MT3S05T
MT3S07FS
MT3S07T
MT6L55FS
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07FS MT3S11AFS Maximum Ratings (Ta = 25°C)
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Original
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MT6L71FS
MT3S07FS
MT3S11AFS
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
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Original
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MT6L75FS
MT3S07FS
MT3S106FS
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PDF
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MT3S07FS
Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05
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Original
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MT6L63FS
MT3S11FS)
MT3S11T
MT3S07FS)
MT3S07T
MT3S07FS
MT3S07T
MT3S11FS
MT3S11T
MT6L63FS
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10
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Original
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MT6L75FS
MT3S07FS
MT3S106FS
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. fSM mold products Q2 MT3S07FS MT3S11AFS Maximum Ratings (Ta = 25°C)
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Original
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MT6L71FS
MT3S07FS
MT3S11AFS
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PDF
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MT3S07FS
Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05
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Original
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MT6L63FS
MT3S11FS)
MT3S11T
MT3S07FS)
MT3S07T
MT3S07FS
MT3S07T
MT3S11FS
MT3S11T
MT6L63FS
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PDF
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MT3S07FS
Abstract: MT6L71FS
Text: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07FS MT3S11AFS 2 5 3 4 0.15±0.05 0.35 0.35
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Original
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MT6L71FS
MT3S11AFS
MT3S07FS
MT3S07FS
MT6L71FS
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L73FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L73FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S109FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
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Original
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MT6L73FS
MT3S07FS
MT3S109FS
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PDF
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MT3S07FS
Abstract: No abstract text available
Text: MT3S07FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07FS Unit: mm Superior performance in buffer applications Superior noise characteristics : NF = 1.6 dB, |S21e|2 = 8 dB f = 2 GHz 1 3 2 0.1±0.05 +0.02 Lead (Pb)-free. 0.8±0.05 1.0±0.05 0.48 -0.04
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Original
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MT3S07FS
MT3S07FS
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PDF
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MT3S07FS
Abstract: No abstract text available
Text: MT3S07FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07FS Unit: mm Superior performance in buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.6 dB, |S21e| = 8 dB f = 2 GHz 0.35±0.05
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Original
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MT3S07FS
MT3S07FS
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L74FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L74FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S07FS MT3S110FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 10
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Original
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MT6L74FS
MT3S07FS
MT3S110FS
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PDF
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MT3S07FS
Abstract: No abstract text available
Text: MT3S07FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07FS Unit: mm Superior performance in buffer applications Superior noise characteristics 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.6 dB, |S21e| = 8 dB f = 2 GHz 0.35±0.05
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MT3S07FS
MT3S07FS
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PDF
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MT3S07FS
Abstract: T304
Text: MT3S07FS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S07FS 単位: mm Buffer 用途に優れています。 • 雑音特性が優れています。 0.2±0.05 • 0.15±0.05 ○ UHF～VHF 帯低電圧動作・低雑音増幅用
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MT3S07FS
MT3S07FS
T304
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Maximum Ratings (Ta = 25°C)
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Original
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MT6L63FS
MT3S07T
MT3S07FS)
MT3S11T
MT3S11FS)
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07FS MT3S11AFS Symbol Rating Q1 Q2 VCBO 10
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Original
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MT6L71FS
MT3S07FS
MT3S11AFS
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Rating Symbol
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Original
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MT6L63FS
MT3S07T
MT3S07FS)
MT3S11T
MT3S11FS)
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Maximum Ratings (Ta = 25°C) Characteristic fS6
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Original
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MT6L55FS
MT3S07T
MT3S07FS)
MT3S05T
MT3S05FS)
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PDF
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TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
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BCJ0003G
BCJ0003F
TA4029CTC
TA4032FT
TB7602TU
MT4S300T
MT4S300U
MT4S301T
TA4029TU
SOT-24
MT4S300
RFM12U7X
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PDF
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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PDF
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RFM70U12D
Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
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SCJ0004N
2SC2714
2SC2715
2SC2716
2SC3123
2SC5064
2SC5084
2SC5089
2SC5094
2SC5106
RFM70U12D
2SC3136
rfm03u3ct
2SK709
RFM70U12
MT3S106
MT3S111
MT3S111P
tim4450
tpm1919
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PDF
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