Contextual Info: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV1620 - MV1650 C t d io d e TYPE NUMBER MV1620 MV1622 MV1624 MV1626 MV1628 MV1630 MV1632 MV1634 MV1636 MV1638 MV1640 MV1642 MV1644 MV1646 MV1648 MV1650 MIN 6.1 7.4 9.0 10.8 13.5 16.2 18.0 19.8

mv1650

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV1620 - MV1650 TYPE NUMBER C t DIODE CAPACITANCE Vr = - 4 Vdc, f = 1 MHz PF MIN NOM MAX MV1620 MV1622 6.1 7.4 6.8 8.2 MV1624 MV1626 9.0 10.8 10.0 12.0 MV1628 MV1630 MV1632 MV1634 13.5 16.2

mv1650

Abstract: MV1620 MV1622 MV1624 MV1626 MV1628 MV1630 MV1632 MV1634 MV1636
Contextual Info: KNOX SEMICONDUCTOR, INC. ABRUPT VARACTOR DIODES MV1620 - MV1650 TYPE NUMBER MV1620 MV1622 MV1624 MV1626 MV1628 MV1630 MV1632 MV1634 MV1636 MV1638 MV1640 MV1642 MV1644 MV1646 MV1648 MV1650 CT DIODE CAPACITANCE Vr = - 4 Vdc, f = 1 MHz pF MIN NOM MAX 6.1 6.8

mv1650

Abstract: MV1634 MV1636 MV1622 MV1624 MV1626 MV1628 MV1630 MV1632 MV1620
Contextual Info: ABRUPT VARACTOR DIODES MV1620 - MV1650 PART NUMBER MV1620 MV1622 MV1624 MV1626 MV1628 MV1630 MV1632 MV1634 MV1636 MV1638 MV1640 MV1642 MV1644 MV1646 MV1648 MV1650 MIN 6.1 7.4 9.0 10.8 13.5 16.2 18.0 19.8 24.3 29.7 35.1 42.3 50.4 61.2 73.8 90.0 CT DIODE CAPACITANCE

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

MV2215

Abstract: MV2112 MV2201 mv838 MV2213 mv2114 1N5441A 1N5443A 1N5444A MV1620
Contextual Info: RF — SIGNAL PROCESSING DIODES continued General-Purpose Tuning Diodes (continued) MAXIMUM WORKING VOLTAGE s ^ ' 30 V O U S CASE 51 DO-204AA (DO-7) Ct Nominal Capacitance PF ±10% («' V r = 4.0 V f = 1.0 MHz - .Cap.''"'' Ratio 4 -2 5 V Mtn Cap . . Ratso

MV109

Abstract: BB105 MV2104 MV104G MV1662 MV1662-2 BB105A MV1404 MV2102 MV2114
Contextual Info: FM Radio Abrupt and TV Hyper-Abrupt Tuning . . . designed fo r use in V H F and U H F tuners and FM radio, providing solid-state reliability in replacement o f mechanical tuning methods. A /" Device Type BB105B BB105G BB105A MV104 MV104G MV109 MV209 MV1401

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

A-29 diode

Abstract: Voltage Variable Capacitance Diodes 1N5450A 1N5470A 1N5472A MV1650 N5447A 1N5441A 1N5140 1N5141
Contextual Info: 6367255 MOTOROLA SC P I O D E S /O P T O ÖT 89D 77450 DE |h3t,7SSS □077'4SD fi *T " 0 7 ~ /? General Purpose Abrupt Junction Tuning Diodes Voltage variable capacitance diodes for electronic tuning and control of RF circuits through UHF frequencies. Utilized

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

30223 varactor sod323

Abstract: Zener c10v KSV1402-1412 SMV30224 30223 sod 323 1N5455 sod-523 varactor diodes MV1662 varactor diode 1N5469 varactor 1N5144
Contextual Info: VARACTORS SMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, SMV1412 TMV1401, 1402, 1403, 1404, 1405, 1406, 1407, 1408, 1409, 1410, 1411, TMV1412 SMV20411, 20412, 20413, 20414, SMV20415 SMV20422, 20423, 20424, SMV20425 SMV20432, 20433, 20434, 20435, 20436, SMV20437

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV1620 - MV1650 TYPE NUMBER Q, QUALITY FACTOR Vr = - 4 Vdc f = 50 MHz MIN C t DIODE CAPACITANCE Vr = - 4 Vdc, f = 1 MHz pF MIN NOM MAX TR, TUNING RATIO C*2V / C-20V f = 1 MHz MIN MAX MV1620

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

1NS14

Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
Contextual Info: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . ABRUPT VARACTOR DIODES MV1620 - MV1650 TYPE NUMBER Ct DIODE CAPACITANCE Vr = - 4 Vdc, f = 1 MHz Q, QUALITY FACTOR Vr = - 4 Vdc f = 50 MHz MIN pF MIN NOM MV1620 MV1622 6.1 7.4 6.8 8.2 MAX 7.5 9.0 MV1624 MV1626 9.0

mv1650

Abstract: MV1620 MV1622 MV1624 MV1626 MV1628 MV1630 MV1632 MV1634 MV1636
Contextual Info: MV1620 thru MV1650 SILICON Silicon Epieap diodes, epitaxial passivated tuning diodes designed for AFC applications in radio, TV, and general electronic-tuning. MAXIMUM RATINGS (Tc = 2 5 * C u nless otherwise noted) Rating Symbol Value Unit VR 20 Volts 250

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

IN5448A

Abstract: 23128 1N54G 24128 S0MC 1N514C ha1822 ha11l1 MVI652 MV1620
Contextual Info: D & IS D HERM ETICALLY S E A L E D elect: A B R U P T - H Y P E R A B R U P T U» G L A S S P A C K A G ED TUNING D IO D ES E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 25» C unless otherwise noted LOW INDUCTANCE FOR USE TO 2 .5 GHz GENERAL APPLICATIONS

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

HA1930

Contextual Info: O ^ G S D elect; HERMETICALLY SEALED G L A SS PACKAGED TUNING DIODES HYPERABRUPT Wr ABRUPT E L E C T R IC A L CH A R A CTER ISTICS T a = 25° C unless otherwise noted GENERAL APPLICATIONS Oiode Cap. IC T)* pf Q4 $ 50 MHz RATIO C2/C20 min/typ NO LOW INDUCTANCE

G603A

Abstract: S0171 DIODE 1N54 HA1930A 1N547S 10YD 1N5470A G605A GDE 6A SQ1213A
Contextual Info: U S I ELECTRONICS INC 3SE £ E3 SbSbMbb 0 0 0 0 3 6 b T BU SI T -07-/7 - D « a D elect HERM ETICALLY S E A LE D G L A S S P A CK A G ED TUNING D IO D ES A BRU PT - H YPER A B R U PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted