EPS300
Abstract: No abstract text available
Text: 3 Related Products Tapes Insulating and Splicing Tapes 384 Mastic Sealing Tapes 385 Vinyl Electrical Tapes 386 All-Weather Protection Tapes 388 Specialty Tapes 389 Scotch Filament Tapes 391 Scotchlite Reflective Tapes 391 How to Search this Catalog This digital catalog provides you with two quick ways to find the products
|
Original
|
PDF
|
2685VM
2686VM
2381VM
EPS300
|
Untitled
Abstract: No abstract text available
Text: International 1*»] Rectifier Mfl55452 QQISbflE DMM • INR IRFR224 IRFU224 HEXFET Power MOSFET • • • • • • • PD-9.600A bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224)
|
OCR Scan
|
PDF
|
Mfl55452
IRFR224
IRFU224
IRFR224)
IRFU224)
|
IRFPC40
Abstract: 9511A IRFPC42 TIL 6N 139 SS452 MSS54
Text: OGGaaaa 5 | IN TE RN AT IO NAL R E C T I F I E R HE D | Data Sheet No. PD-9.511A Mfl55M52 T -S f-/.9 INTERNATIONAL RECTIFIER llORl REPETITIVE AVALANCHE AND dv/dt RATED IRFPC4Q IRFPC42 H E X F F P T R A N S IS T O R S N-CHANNEL POWER MOSFETs TÜ-247AC PACKAGE
|
OCR Scan
|
PDF
|
4fl5SM52
IRFPC40
-247AC
O-247AC
C-583
IRFPC40,
IRFPC42
QQ0aa35
C-584
IRFPC40
9511A
TIL 6N 139
SS452
MSS54
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D B Mfl55 4 5 2 G G 1 7 3 1 4 b35 PD-2.327 htemational ^Rectifier sdsi SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Description/Features Characteristics SD51. Units lF AV Rectangular 60 A 35/45 V waveform V RRM
|
OCR Scan
|
PDF
|
Mfl55
TheSD51
|
g598
Abstract: IRFH250 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595
Text: HE 0 § Mfl554SE INTERNATIONAL 3 | Data Sheet No. PD-9.411A RECTIFIER I“ R INTERNATIONAL RECTIFIER T-39-13 HEXFET TRANSISTORS IRFHS50 N - C H A IN IIM E L M O S F E T s Features: 200 Volt, 0.090 Ohm HEXFET T he HEXFET® technology is the key to International
|
OCR Scan
|
PDF
|
s54s2
T-39-13
IRFH25Ã
G-597
IRFH250
G-598
g598
irfh260
A220 DLP
100-C
22E8
irfh25u
9411a
G595
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • Mfl55i<5S 0G170bb ERG ■ INR PD-2.310 International I3»ëIRectifier s o w q o 3 f s o w q o 4 f SCHOTTKY RECTIFIER 5.5 Amp A VRHM 3Q/40 V ■fsm 470 A VF 5Apk,TJ-25°C 0.65 V Ti •40to125 °C • Popular D-PAK outline
|
OCR Scan
|
PDF
|
0G170bb
TJ-25Â
O-252AA)
Q17Dbc
50WQ03F
50WQ04F
|
Untitled
Abstract: No abstract text available
Text: _ _ „ _ • international W Rectifier 4555452 G ü lb S H Üb3 ■ INR international rectifier ^se» s e rie s b4oa BACK TO BACK SCRs Power Modules 40A Features ■ G la s s p assivated junctions for greater reliability ■ Electrically isolated b a se plate 3500V RM S
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER b5E D • MÖ55452 GD17Elb S27 M I N R PD-2.333 3o c p q o so International [?o r JRectifier 3 o c pq io o SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features 30CPQ. Units lF AV Rectangular waveform 30
|
OCR Scan
|
PDF
|
GD17Elb
30CPQ.
Tj-125Â
O-247
D-181
Mfl55452
30CPQ080
30CPQ100
D-182
|
Untitled
Abstract: No abstract text available
Text: PD - 9.1448C International IOR Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
|
OCR Scan
|
PDF
|
1448C
IRG4BC20U
TQ-220AB
002flb45
|
Untitled
Abstract: No abstract text available
Text: HE D I 4055452 G O G ^ a a | Data Sheet No. PD-9.513B INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER I R T -39-23 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC30 IRFAC32
|
OCR Scan
|
PDF
|
IRFAC30
IRFAC32
G-221
MAS54S2
IRFAC30,
IRFAC32
G-222
|
Untitled
Abstract: No abstract text available
Text: International Tor ; Rectifier 4 fiS 5 4 5 B HEXFET Pow er M O S F E T IN T E R N A T IO N A L R E C T I F I E R • • • • • 0015154 b?5 PD-9.650A IN R IRFI730G Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm
|
OCR Scan
|
PDF
|
IRFI730G
O-220
|
IRFP460
Abstract: IRFP462 C558 c556 C555 C560 C557
Text: HE D | 4Û55M52 0GGÔÔÜ4 □ | Data Sheet No. PD-9.512A *r~ IN TER NAT IO NA L R E C T I F I E R INTERNATIONAL RECTIFIER Sf-s.tr IO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFEFTRAIVISISTORS IRFP46S N-CHANNEL POWER MQSFETs TO-S47AC PACKAGE 500 Volt, 0.27 Ohm HEXFET
|
OCR Scan
|
PDF
|
O-S47AC
O-247AC
C-559
IRFP460,
IRFP462
T-39-15
C-560
IRFP460
C558
c556
C555
C560
C557
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER 2bE D • T~ M A S S E S 0010751 3 ■ X C 3 R | IN T E R N A T IO N A L . R E C T I F IE R J 1 R23D SERIES 2600-2000 VOLTS RANGE 320 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS J x PA RT \ t NUMBS* : : l
|
OCR Scan
|
PDF
|
R33024A
R33022B
R23D26A
4flS5452
001Q7SA
Mfl554S2
R23DR
DQ-205AB
|
Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-6.085 International I R Rectifier IR 2 1 1 0 L 4 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V
|
OCR Scan
|
PDF
|
0-20V
|
|
|
IRC530-007
Abstract: IRC530 international rectifier GTO 2A38 IRC630 IRC531 IRF531 IRC530-008 DIODE EG 83A I-10A
Text: HE D I MflSS4Sa GGDfliGM 3 | Data Sheet No. PD-9.454C T ? tz < / INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXSense —Current; Sense IRC530 C Series
|
OCR Scan
|
PDF
|
T0-220
O-220
0L74S)
IRC530
IRC531
IRC530-007
IRC531-007
IRC530-008
IRC531-008
international rectifier GTO
2A38
IRC630
IRC531
IRF531
DIODE EG 83A
I-10A
|
International Rectifier IRF520
Abstract: No abstract text available
Text: International i«R Rectifier MÔ55452 0 0 m b 4 4 343 m i N R HEXFET Power MOSFET • • • • • • PD-9.313K IRF520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling
|
OCR Scan
|
PDF
|
IRF520
O-220
S54S2
International Rectifier IRF520
|
MOSFET IRF150
Abstract: IRF150 MOSFET HA711
Text: HE 0 I 4055452 DGtnObb 5 | T-39-13 Data Sheet No. PD-9.305G I N T E R N A T IO N A L R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRF15Ü IRF151 IRF15S -Channel IRF153 Features: 100 Volt, 0.055 Ohm H EXFET The HEXFET technology is the key to International
|
OCR Scan
|
PDF
|
T-39-13
IRF15Ü
IRF151
IRF15S
IRF153
MOSFET IRF150
IRF150 MOSFET
HA711
|
2G25
Abstract: 10BB S250A DATA SHEET R38B14A
Text: ^.INTERNATIONAL RECTIFIER IO R in t e r n a t io n a l 73 D | 4Ö5S452 DDDTEfla 1 T ' ^ -2-3 Data Sheet No. PD-2.161 , r e c t if ie r R38B SERIES 1400-800 VOLTS RANGE 1670 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS PART NUMBER VBRH.' VR " V I
|
OCR Scan
|
PDF
|
R38B14A
R3BB12A
R3BB10B
DDQ75Ã
D0-200AB
2G25
10BB
S250A DATA SHEET
|
UL1385
Abstract: D243 D244 D245 IRKL1
Text: MÛ5SMS2 D01b71ô International IS Rectifier SERIES IRK.L131/132 NEW INT-A-pak Power Modules FAST RECOVERY DIODES INTERNATIONAL T17 • INR RECTIFIER bS E Features I Fast recovery time characteristics I Electrically isolated base plate Industrial standard package
|
OCR Scan
|
PDF
|
554S2
D01b71Ã
l131/132
L131/132
UL1385
D243
D244
D245
IRKL1
|
IRFC9024
Abstract: CPY302F HEXFET Power MOSFET P-Channel 1000 V N-channel mosfet IRFC024 302F 60V Single N-Channel HEXFET Power MOSFET Scans-007982 HEXFET Characteristics
Text: INTERNATIONAL RECTIFIER bSE J> m 4055*452 Oülb'ÎD'l Ô7b • INR Data Sheet No. PD-5.015D International [^Rectifier HEXFET Power Module CPY302F 3-Phase Bridges Description/Features Product Summary The CPY302F HEXFET power module is intended for use in driving sub-fractional horsepower DC brushless
|
OCR Scan
|
PDF
|
CPY302F
IRFC9024
HEXFET Power MOSFET P-Channel
1000 V N-channel mosfet
IRFC024
302F
60V Single N-Channel HEXFET Power MOSFET
Scans-007982
HEXFET Characteristics
|
Untitled
Abstract: No abstract text available
Text: ICS1712 Integrated Circuit Systems, Inc. QuickSaver Charge Controller for Nickel-Cadmium and Nickel-Metal Hydride Batteries_ General Description Features The ICS1712 is a CMOS device designed for the intelligent charge control of either nickel-cadmium NiCd or nickel-metal hydride (NiMH) batteries. The controller uses a pulsed-current charging technique together with voltage slope and/or
|
OCR Scan
|
PDF
|
ICS1712
ICS1712
ICS1712N,
ICS1712M
ICS1712M
4A2575A
|
Untitled
Abstract: No abstract text available
Text: P D 9.1573 International IOR Rectifier IRG4PH50UD PRELIMINARY INSULATED G A TE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features UltraFast CoPack IGBT • UltraFast: O ptim ized for high operating V ces = 1200V frequencies up to 40 kH z in hard switching,
|
OCR Scan
|
PDF
|
IRG4PH50UD
55M52
002023b
|
SMD transistor k21
Abstract: No abstract text available
Text: International US Rectifier HEXFRED PD-2.381 Provisional Data Sheet HFA40HF60 ULTRA FAST, SOFT RECOVERY DIODE Features: — Ultrafast Recovery — Ultra Soft Recovery — Very Low Ir r m — Very Low Qrr — Guaranteed Avalanche — Specified at Operating Conditions
|
OCR Scan
|
PDF
|
HFA40HF60
HFA40HF60
00A/pS,
00A//1S,
SMD transistor k21
|
C818
Abstract: st c817 C817 st c816 C814 irgti050u06 c816
Text: International ÜH Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE” IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KH z hard switching, or 1OOKHz resonant •Switching-Loss Rating includes all "tail"
|
OCR Scan
|
PDF
|
IRGTI050U06
C-817
46554S2
C-818
Mfl5545£
0Q20LÜ
C818
st c817
C817
st c816
C814
irgti050u06
c816
|
